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Renesas 71V65703S85BGG
- Part No.:
- 71V65703S85BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65703S85BGG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,653
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Product details
Overview
71V65703S85BGG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9.44 Mbit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer or cache memory in networking switches, telecom line cards, and packet processing engines requiring deterministic latency and burst data throughput.
For engineers reviewing the 71V65703S85BGG datasheet, 71V65703S85BGG pinout, 71V65703S85BGG application, or 71V65703S85BGG equivalent, key selection criteria include ZBT™ burst timing compliance, 100 MHz synchronous interface timing, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and 3.3V I/O voltage tolerance with VDDQ decoupling.
Technical Context
The 71V65703S85BGG implements a synchronous, clocked architecture with registered address/control inputs and flow-through (unregistered) outputs. Its internal burst counter supports 4-word linear or interleaved sequences controlled by LBO, while ADV/LD determines whether an external address is loaded or the counter advances.
It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, individual byte write enables (BW1–BW4) for selective 9-bit writes, and asynchronous OE/ZZ for output control and sleep mode. Clock Enable (CEN) suspends all synchronous operations without affecting output state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 bits (9.44 Mbit); supports 36-bit parallel data path for high-bandwidth buffering |
| Max Clock Frequency | 100 MHz; enables 10 ns cycle time for real-time packet buffering in 10G+ systems |
| Clock-to-Data Access | 7.5 ns; guarantees deterministic read latency critical for time-sensitive switching logic |
| ZBT™ Architecture | Zero Bus Turnaround; eliminates dead cycles between consecutive read/write bursts, improving bus utilization |
| Burst Capability | 4-word burst (linear or interleaved); reduces address overhead and increases effective throughput per command |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains enable noise isolation |
| Operating Temperature | –40°C to +85°C (industrial grade); qualified for deployment in uncontrolled ambient environments |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, compatible with standard surface-mount assembly processes and thermal management for high-density PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; selects one of 256K locations in 256K × 36 configuration |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous operations referenced to this edge |
| R/W | Read/Write Control | Synchronous signal determining data direction on next cycle; no separate RD/WR pins required |
| ADV/LD | Address Load / Burst Advance | Low = load new external address; High = increment internal burst counter; defines burst sequencing behavior |
| LBO | Burst Order Select | Static input: Low = linear burst (0,1,2,3), High = interleaved burst (0,2,1,3); sets memory access pattern |
| BW1–BW4 | Byte Write Enables | Four independent active-low enables for 9-bit subword writes; allows partial-word updates without read-modify-write |
| CE1, CE2, CE2 | Chip Enables | Three enables (CE1/CE2 low-active, CE2 high-active) support flexible depth expansion and hierarchical memory decoding |
| OE | Output Enable | Asynchronous, active-low; tri-states outputs independently of clock-enables shared bus arbitration |
| ZZ | Sleep Mode Input | Asynchronous high-level entry into low-power retention mode; maintains data with minimal current draw |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Pins | 36-bit bidirectional data bus (32 data + 4 parity); flow-through output path ensures minimal output delay |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between read and write bursts, enabling continuous data streaming in full-duplex memory interfaces |
| Internally synchronized OE | Removes need for external OE timing control-output enable is internally aligned to CLK, simplifying system timing |
| Single R/W pin | Reduces control pin count and simplifies address/control bus routing versus dual RD/WR implementations |
| 4-word burst counter | Generates sequential addresses automatically after initial load, cutting command overhead by 75% per burst transaction |
| Individual byte write (BW1–BW4) | Enables precise 9-bit subword writes without disturbing adjacent bytes-critical for protocol header manipulation |
| Separate VDD/VDDQ supplies | Isolates core logic noise from I/O drivers, improving signal integrity and reducing ground bounce in high-speed buses |
Applications
| Network Packet Buffering | Telecom Line Card Cache |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payload fragments in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 7.5 ns read access and ZBT™ burst efficiency. Use Value: Enables wire-speed forwarding by eliminating bus turnaround gaps during header inspection and rewrite operations. |
Use Scenario: Caching ATM cell headers and control metadata in OC-192/STM-64 line interface units. IC Role / Device Role / Timing Role: Synchronous burst-capable memory providing 100 MHz sustained bandwidth for real-time cell processing pipelines. Use Value: Supports 4-word interleaved bursts matching SONET frame alignment, reducing controller overhead and jitter. |
| Industrial PLC Data Logging | Radar Signal Processing Buffer |
|
Use Scenario: Temporarily storing sensor acquisition snapshots and control loop history in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-grade SRAM with –40°C to +85°C operation serving as deterministic cyclic buffer for time-critical I/O logging. Use Value: Guarantees data coherency across temperature extremes using VDDQ-stable I/O and ZZ-mode retention during brownouts. |
Use Scenario: Holding intermediate FFT results and beamforming coefficients in phased-array radar front-ends. IC Role / Device Role / Timing Role: Flow-through output SRAM delivering burst-aligned sample data to DSP cores with sub-10 ns latency predictability. Use Value: Matches pipeline depth requirements of real-time signal processors via linear 4-word bursts synchronized to ADC sampling clocks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-100AXC | 100 MHz, 256K × 36, but uses QDR-II architecture with separate read/write ports and differential clocks | Requires differential clock routing and dual-port controller logic; not drop-in compatible | Select when true simultaneous read/write concurrency is required over ZBT™ sequential burst efficiency |
| AS7C3256A-10JCN | 10 ns access, 256K × 36, but asynchronous interface-no clock, no burst counter, no ZBT™ | Lacks synchronous timing control and burst capability; unsuitable for pipelined systems | Consider only for legacy designs where clock domain isolation or burst efficiency is not required |
Compared with CY7C1371DV33-100AXC and AS7C3256A-10JCN, the 71V65703S85BGG delivers optimal balance of burst efficiency, deterministic latency, and pin-compatible upgrade path from earlier IDT ZBT™ generations-making it ideal for cost-sensitive, high-throughput synchronous bus architectures.
Availability
71V65703S85BGG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.
Supply support for 71V65703S85BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V65703S85BGG belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet-switched systems-targeting telecom, datacom, and real-time embedded applications demanding predictable memory access.
FAQ
What is the memory organization and total capacity of the 71V65703S85BGG?
The 71V65703S85BGG is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This configuration provides a 36-bit-wide data bus optimized for high-throughput buffering in networking and telecom applications where word-aligned data handling is essential.
Does the 71V65703S85BGG support burst read and write operations?
Yes, the 71V65703S85BGG supports 4-word synchronous burst operations in both linear and interleaved sequences, selected via the LBO pin. Burst mode is initiated by asserting ADV/LD high after an initial address load, enabling automatic address incrementing and eliminating per-word command overhead.
What is the purpose of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S85BGG?
The 71V65703S85BGG uses CE1 and CE2 as active-low enables and CE2 as an active-high enable to support flexible depth expansion across multiple devices. This triple-CE scheme allows hierarchical decoding and seamless integration into larger memory arrays without external logic.
How does the ZBTTM (Zero Bus Turnaround) feature improve system performance in the 71V65703S85BGG?
ZBTTM eliminates idle bus cycles between alternating read and write operations by allowing immediate transition from one burst to the next. In the 71V65703S85BGG, this enables continuous data flow in full-duplex memory interfaces-increasing effective bandwidth by up to 30% compared to conventional SRAMs with turnaround penalties.
Can the 71V65703S85BGG operate in low-power mode, and how is it activated?
Yes, the 71V65703S85BGG supports low-power sleep mode activated by driving the ZZ pin high. In this state, the internal clock is gated, dynamic power drops significantly, and data retention is guaranteed across the full industrial temperature range (–40°C to +85°C).
71V65703S85BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65703S85BGG FAQ
1.How can I place an order for 71V65703S85BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65703S85BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65703S85BGG reliable?
The price and inventory of 71V65703S85BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65703S85BGG is usually 5 days.
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71V65703S85BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65703S85BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65703S85BGG?
For technical support, including 71V65703S85BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65703S85BGG requirements.
6.How does Aetrix verify that 71V65703S85BGG is sourced from the original manufacturer or authorized distributors?
All 71V65703S85BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65703S85BGG meets industry standards.
7.What is the process for return or replacement of 71V65703S85BGG?
All 71V65703S85BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V65703S85BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65703S85BGG part is unused and in its original packaging.
Return procedure for 71V65703S85BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65703S85BGG Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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