Renesas 71V65703S85BGG8

Overview

71V65703S85BGG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer/cache memory in network switches, telecom line cards, and packet processing engines requiring deterministic burst transfers.

For engineers reviewing the 71V65703S85BGG8 datasheet, 71V65703S85BGG8 pinout, 71V65703S85BGG8 application, or 71V65703S85BGG8 equivalent, key selection criteria include ZBT™ burst capability (linear/interleaved), individual byte write control (BW1–BW4), asynchronous OE/ZZ for output disable and sleep mode, and JEDEC-standard 119-ball BGA (BGG119) packaging compatible with industrial temperature range (–40°C to +85°C).

Technical Context

The 71V65703S85BGG8 implements a synchronous dual-edge-triggered architecture with registered address/control inputs and registered data-in path, while using flow-through (unregistered) data-out path. Its on-chip burst counter advances on ADV/LD = HIGH, supporting four-word bursts with LBO-selectable linear or interleaved addressing sequences.

Three chip enables (CE1, CE2 active-low; CE2 active-high) enable depth expansion without external logic. Clock Enable (CEN) suspends all synchronous operations while preserving register state, and ZZ input gates internal clock to enter low-power sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

71V65703S85BGG8 is packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGG119), 14 mm × 20 mm footprint, with exposed thermal pad. Pinout conforms to BG119 layout for 256K × 36 configuration (per datasheet drawing 5298 drw 13a).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV18-100BZI and AS7C33128PFS-10BIN, the 71V65703S85BGG8 uniquely delivers ZBT™-optimized zero-turnaround operation, integrated burst counter with LBO-selectable sequencing, and true 36-bit-wide byte-write granularity - making it the only option for high-efficiency packet buffer architectures requiring deterministic sub-10 ns read latency and seamless burst transitions.

Availability

71V65703S85BGG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, baseband processor memory, and radar signal processing applications requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for 71V65703S85BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications infrastructure.

The 71V65703S85BGG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth data buffering in carrier-grade networking and real-time signal processing systems.

FAQ

What is the memory organization and total capacity of the 71V65703S85BGG8?

The 71V65703S85BGG8 is organized as 256K × 36, providing 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration supports 36-bit-wide data transfers and is pin-compatible with the 512K × 18 variant (71V65903) in the same family. The device uses a 18-bit address bus (A0–A17) and delivers deterministic access timing optimized for burst-oriented traffic flows.

Does the 71V65703S85BGG8 support burst read and write operations, and how is burst order controlled?

Yes, the 71V65703S85BGG8 supports 4-word burst operations for both reads and writes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The internal burst counter advances on ADV/LD = HIGH, and the initial address is loaded when ADV/LD = LOW - enabling predictable, hardware-controlled burst sequencing without CPU intervention.

How does the ZBTTM (Zero Bus Turnaround) feature function in the 71V65703S85BGG8?

ZBTTM eliminates idle cycles between consecutive read and write operations by allowing immediate bus direction reversal. In the 71V65703S85BGG8, this is achieved through synchronized control logic that decouples address/control latching from data transfer timing. When a write cycle completes, the next read cycle begins on the subsequent clock edge without requiring bus release or re-arbitration - increasing effective bandwidth in mixed-access applications like packet buffering.

What are the power supply requirements and thermal specifications for the 71V65703S85BGG8?

The 71V65703S85BGG8 requires two 3.3 V supplies: VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O drivers. It operates across –40°C to +85°C (industrial grade) and features an asynchronous ZZ pin that gates the internal clock to reduce power during idle periods while maintaining data retention. The BGG119 package includes a thermal pad to support dissipation up to 2.0 W maximum.

Can the 71V65703S85BGG8 be used with standard 3.3V CMOS logic interfaces without level-shifting?

Yes, the 71V65703S85BGG8 is fully compatible with standard 3.3V CMOS interfaces. Its VIH (input high voltage) is specified as 2.0 V minimum and VDDQ + 0.3 V maximum, and VIL (input low voltage) is –0.3 V to 0.8 V - matching common 3.3V logic thresholds. The device also supports direct connection to FPGAs, ASICs, and DSPs with 3.3V I/O banks, and its flow-through outputs eliminate timing mismatches caused by output registers.