Renesas 71V65703S85BGGI

Overview

71V65703S85BGGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9.44 Mbit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround (ZBT) for dead-cycle-free read/write transitions, flow-through outputs, and 4-word burst capability. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA co-processor interfaces requiring deterministic latency.

For engineers reviewing the 71V65703S85BGGI datasheet, 71V65703S85BGGI pinout, 71V65703S85BGGI application, or 71V65703S85BGGI equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O compatibility, industrial temperature support (–40°C to +85°C), TQFP/BGA package options, and byte-write control granularity for partial-word updates.

Technical Context

The 71V65703S85BGGI implements a synchronous dual-edge-triggered architecture with registered address/control inputs and unregistered (flow-through) data outputs. Its on-chip burst counter supports linear or interleaved sequences via the LBO pin, and ADV/LD controls either external address load (low) or internal counter increment (high).

Three chip enables (CE1, CE2 active-low; CE2 active-high) enable depth expansion without external logic. Clock Enable (CEN) suspends all synchronous operations while preserving register state, and ZZ input places the device in low-power sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 119-ball BGA (BGG), or 165-ball fine-pitch BGA (BQG). The 71V65703S85BGGI uses the BGG119 package variant (119-ball grid array, 1.0 mm pitch, 14 mm × 20 mm footprint).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-100BGXI and AS7C3256A-10JIN, the 71V65703S85BGGI uniquely delivers ZBT timing, flow-through outputs, and synchronous burst control in a single-package solution optimized for high-throughput, low-latency buffering without dual-port complexity or asynchronous timing uncertainty.

Availability

71V65703S85BGGI is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and wireless baseband applications requiring stable component supply, long-term lifecycle support, and industrial-grade thermal performance.

Supply support for 71V65703S85BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S85BGGI belongs to IDT's ZBT SRAM product line, designed specifically for high-speed packet buffering, real-time signal processing, and FPGA-adjacent memory applications demanding deterministic latency and burst efficiency.

FAQ

What is the memory organization and capacity of the 71V65703S85BGGI?

The 71V65703S85BGGI is organized as 256K × 36 bits, delivering 9,437,184 total bits (9.44 Mbit) of synchronous SRAM storage. This configuration supports 36-bit wide data paths ideal for 32-bit systems with parity or ECC overhead. It shares pin compatibility with the 512K × 18 variant (71V65903), allowing layout reuse across density options.

Does the 71V65703S85BGGI support burst read and write operations?

Yes, the 71V65703S85BGGI supports 4-word burst operations in both linear and interleaved sequences, selected by the LBO pin. Burst mode is initiated after loading an initial address with ADV/LD low, then advancing the internal counter with ADV/LD high. Each burst cycle delivers four consecutive words with a single address setup, reducing control overhead in streaming applications.

How does the Zero Bus Turnaround (ZBT) feature work in the 71V65703S85BGGI?

The ZBT feature in the 71V65703S85BGGI eliminates idle bus cycles between alternating read and write operations. When transitioning from a read burst to a write burst (or vice versa), the device immediately accepts the next command on the subsequent clock edge - no wait states or turnaround cycles are inserted. This is achieved through internal handshake logic that manages bus direction and timing without external intervention.

What are the power supply requirements for the 71V65703S85BGGI?

The 71V65703S85BGGI requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O drivers, 3.3 V ±5%). These must be decoupled per JEDEC guidelines. The device also supports asynchronous sleep mode via the ZZ pin, reducing power consumption while maintaining data retention across the full industrial temperature range.

Can the 71V65703S85BGGI operate in industrial temperature conditions?

Yes, the 71V65703S85BGGI is rated for industrial temperature operation from –40°C to +85°C. This qualification covers all electrical specifications including access time, setup/hold timing, and DC parameters. The BGG119 package variant used in this part is specifically characterized and screened for reliability under these extended thermal conditions.