Renesas 71V65703S85BGGI8

Overview

71V65703S85BGGI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9,437,184-bit capacity), featuring zero bus turnaround (ZBT), 100 MHz operation (7.5 ns clock-to-data access), flow-through outputs, and 4-word burst capability with linear or interleaved sequencing. It serves as high-speed buffer/cache memory in network switches, telecom line cards, and FPGA co-processor interfaces requiring deterministic latency and no dead cycles between read/write transitions.

For engineers reviewing the 71V65703S85BGGI8 datasheet, 71V65703S85BGGI8 pinout, 71V65703S85BGGI8 application, or 71V65703S85BGGI8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 vs BGA-119 package compatibility, industrial temperature support (–40°C to +85°C), 3.3V I/O supply (VDDQ), and byte-write enable (BW1–BW4) control for partial-word writes.

Technical Context

The 71V65703S85BGGI8 implements a synchronous dual-register architecture: address/control signals are latched on the rising CLK edge when ADV/LD is low and chip enables are active, while data input is registered and output is flow-through (no output register). Its ZBT operation eliminates bus turnaround delay by allowing immediate read-after-write or write-after-read transitions without idle cycles.

It integrates a 2-bit burst counter controlled by ADV/LD and LBO, supporting both linear and interleaved 4-word sequences. Chip select uses three independent enables (CE1, CE2 active-low; CE2 active-high), enabling flexible depth expansion. Power management includes asynchronous ZZ sleep mode and synchronous CEN clock gating.

Key Specifications

Pinout & Package

71V65703S85BGGI8 is packaged in a 119-ball fine-pitch ball grid array (BGA), designated BGGI8 per IDT ordering nomenclature, compliant with JEDEC MO-207 (BG119). The package measures 12 mm × 12 mm with 0.8 mm ball pitch and exposes VSS, VDD, VDDQ, and I/O balls across the array for optimal power delivery and signal routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100AXC and AS7C3256A-10JIN, the 71V65703S85BGGI8 uniquely delivers zero-bus-turnaround timing within a synchronous single-port architecture - making it irreplaceable in systems where deterministic latency and burst efficiency outweigh the need for true dual-port concurrency or lowest unit cost.

Availability

71V65703S85BGGI8 is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and aerospace avionics applications requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for 71V65703S85BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V65703S85BGGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for high-speed packet processing, telecom infrastructure, and FPGA-adjacent memory subsystems demanding sub-10 ns latency and seamless read/write transitions.

FAQ

What is the memory organization and total capacity of the 71V65703S85BGGI8?

The 71V65703S85BGGI8 is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration supports 36-bit data paths with 18 address lines (A0–A17), and it is pin-compatible with the 512K × 18 variant (71V65903) for flexible system scalability.

Does the 71V65703S85BGGI8 support burst read and write operations, and how is burst mode configured?

Yes, the 71V65703S85BGGI8 supports 4-word burst operations in both read and write modes. Burst sequencing is controlled by the ADV/LD pin (HIGH advances the internal counter) and the LBO pin (LOW = linear, HIGH = interleaved). No external burst counter is needed - the function is fully integrated and synchronous to CLK.

What is the role of the ZZ pin on the 71V65703S85BGGI8, and does it retain data during sleep?

The ZZ pin on the 71V65703S85BGGI8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces power consumption to standby levels while guaranteeing full data retention - a critical feature for energy-aware telecom and portable embedded systems.

How many chip enable inputs does the 71V65703S85BGGI8 have, and what are their polarities?

The 71V65703S85BGGI8 has three chip enable inputs: CE1 and CE2 are active-low, while CE2 is active-high. All three must be asserted simultaneously (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to enable the device - enabling robust depth expansion with minimal external logic.

Is the 71V65703S85BGGI8 compatible with industrial temperature requirements, and what is its specified range?

Yes, the 71V65703S85BGGI8 is qualified for industrial temperature operation from –40°C to +85°C, as confirmed by its "I" suffix and documentation in the Absolute Maximum Ratings and Recommended Operating Conditions tables - making it suitable for deployment in harsh-environment applications.