Renesas 71V65703S85BGI

Overview

71V65703S85BGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9,437,184-bit capacity), supporting 100 MHz operation with 7.5 ns clock-to-data access time. It implements Zero Bus Turnaround (ZBT) architecture to eliminate dead cycles between read and write bursts, features flow-through outputs, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed packet buffering, network switch fabric control, and real-time DSP data caching.

For engineers reviewing the 71V65703S85BGI datasheet, 71V65703S85BGI pinout, 71V65703S85BGI application, or 71V65703S85BGI equivalent, key selection criteria include ZBT burst timing compliance, 3.3V I/O voltage tolerance, TQFP-100 package compatibility, and industrial-grade thermal reliability for telecom infrastructure designs.

Technical Context

The 71V65703S85BGI uses a synchronous CMOS architecture with registered address/control inputs and flow-through data outputs-no output register-enabling deterministic 1-cycle latency from clock edge to valid Q. Its internal burst counter supports 4-word interleaved or linear sequences controlled by LBO, with ADV/LD governing address load vs. counter advance.

It implements three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, single R/W pin for mode control, and individual byte write enables (BW1–BW4) for granular 9-bit writes. Clock Enable (CEN) suspends all synchronous operations while preserving register state, and ZZ input enables asynchronous sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch. Pinout validated per IDT document 5298 drw 02 (256K×36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-100AXC and AS7C3256A-10JIN, the 71V65703S85BGI uniquely delivers flow-through outputs with ZBT timing and integrated burst control - essential for interoperability with IDT/Renesas-compatible switch fabric ASICs and telecom PHY controllers.

Availability

71V65703S85BGI is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric control, DSP data caching, industrial real-time controllers, and high-reliability embedded systems requiring stable component supply across extended product lifecycles.

Supply support for 71V65703S85BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V65703S85BGI belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency, burst-oriented data buffering in networking, telecom, and real-time embedded systems demanding deterministic timing and industrial reliability.

FAQ

What is the memory organization and total capacity of the 71V65703S85BGI?

The 71V65703S85BGI is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration supports 36-bit wide data paths ideal for network processor interfaces and DSP memory buses. It shares pinout and timing compatibility with the 512K × 18 variant (71V65903), enabling flexible density selection within the same PCB layout.

Does the 71V65703S85BGI support burst read and write operations, and how is burst order controlled?

Yes, the 71V65703S85BGI supports 4-word burst operations in both read and write modes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (0,1,2,3), while LBO = HIGH selects interleaved order (0,2,1,3). The ADV/LD pin controls whether an external address is loaded (LOW) or the internal counter advances (HIGH), enabling seamless burst sequencing without external logic.

What is the function of the ZZ pin on the 71V65703S85BGI, and does it retain data during sleep?

The ZZ pin on the 71V65703S85BGI is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device in ultra-low-power sleep mode while guaranteeing full data retention. This feature is critical for power-sensitive telecom modules and industrial controllers that require periodic wake/sleep cycles without RAM refresh overhead or data loss.

How many chip enable signals does the 71V65703S85BGI have, and what are their polarities?

The 71V65703S85BGI has three chip enable signals: CE1 and CE2 are active-low, while CE2 is active-high. All three must be asserted simultaneously (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This asymmetric enable scheme allows flexible depth expansion across multiple SRAMs using simple logic gates or FPGA outputs, and supports one-cycle deselection for fast bank switching.

Is the 71V65703S85BGI compatible with industrial temperature requirements, and what is its specified range?

Yes, the 71V65703S85BGI is rated for industrial temperature operation from –40°C to +85°C. This specification is explicitly confirmed in the "Recommended Operating Temperature and Supply Voltage" table (5298 tbl 05) and applies to the 'BGI' suffix variant. It ensures reliable functionality in uncontrolled environments such as base station cabinets, factory automation controllers, and outdoor networking equipment without thermal derating.