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Renesas 71V65703S85BQG
- Part No.:
- 71V65703S85BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V65703S85BQG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,078
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Product details
Overview
71V65703S85BQG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9.44 Mbit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround (ZBT) for dead-cycle-free read/write transitions, flow-through outputs, and 4-word burst capability. It serves as high-speed buffer or cache memory in networking switches, telecom line cards, and packet processing systems requiring deterministic latency.
For engineers reviewing the 71V65703S85BQG datasheet, 71V65703S85BQG pinout, 71V65703S85BQG application, or 71V65703S85BQG equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O compatibility, TQFP-100 packaging, industrial temperature support (–40°C to +85°C), and burst mode configuration via LBO/ADV/LD control.
Technical Context
The 71V65703S85BQG implements a synchronous, clocked architecture where address/control inputs are registered on the rising CLK edge, and data transfers occur one cycle later. Its ZBT feature eliminates bus turnaround delay by enabling immediate read-after-write or write-after-read transitions without idle cycles.
It integrates a 4-word burst counter controlled by ADV/LD and LBO (linear/interleaved), supports individual byte write enables (BW1–BW4), and uses asynchronous OE and ZZ pins for output control and sleep mode entry while maintaining data retention. All synchronous signals-including CE1, CE2, CE2, R/W, CEN, and BWx-require strict setup/hold timing relative to CLK.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 bits (9.44 Mbit); fixed configuration for this variant - no x18 mode |
| Clock Frequency | 100 MHz maximum; enables 10 ns cycle time for high-throughput buffering |
| Access Time | 7.5 ns clock-to-data (tCD); guarantees deterministic read latency critical for real-time packet forwarding |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains isolate noise-sensitive I/O paths |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for deployment in uncontrolled ambient environments |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus traffic and controller overhead per memory transaction |
| Zero Bus Turnaround | ZBT™ architecture eliminates dead cycles between read/write transitions; essential for full-duplex data flow |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout conforms to PKG100 configuration for 256K × 36 organization (per datasheet drawing 5298 drw 02).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Synchronous timing reference; all register inputs sampled on rising edge |
| A0–A17 | Address inputs | 18-bit address bus for 256K depth; A18 not used in this configuration |
| R/W | Read/Write control | Single synchronous signal defining cycle type; determines data direction one cycle later |
| ADV/LD | Advance burst / Load new address | Loads external address when low; increments internal burst counter when high |
| LBO | Linear/Interleaved burst order | Static selection of burst sequence; LBO = LOW → linear, HIGH → interleaved |
| BW1–BW4 | Byte write enables | Four active-low signals controlling 9-bit byte writes; enables partial-word updates without masking logic |
| CE1, CE2, CE2 | Chip enables | Three independent enables (CE1/CE2 active-low, CE2 active-high); support depth expansion and flexible decode |
| OE | Output enable | Asynchronous; tri-states outputs immediately when high - simplifies bus sharing |
| ZZ | Sleep mode | Asynchronous; gates internal clock and reduces power to minimum while retaining data |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional flow-through data path; no output register - output valid after tCD |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates bus turnaround dead cycles between reads and writes - enables continuous full-bandwidth data streaming |
| Internally synchronized OE | Removes need for external OE timing control; OE can be tied low for simplified interface design |
| 4-word burst counter | Reduces address bus activity by 75% per burst; supported in both linear and interleaved sequences |
| Individual byte write control | Enables precise 9-bit sub-word writes without external byte-lane gating or read-modify-write cycles |
| Three chip enables | Allows seamless depth expansion across multiple devices using standard address decoding logic |
| Flow-through outputs | Delivers data one clock cycle after access initiation - no added latency from output registers |
Applications
| Networking Switch Buffer | Telecom Line Card Cache |
|---|---|
|
Use Scenario: Storing packet headers and metadata in Layer 2/3 switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-speed synchronous buffer providing deterministic 7.5 ns read access and ZBT-enabled back-to-back read/write for header parsing and rewrite. Use Value: Enables wire-speed forwarding at 10 Gbps+ by eliminating bus turnaround stalls during concurrent ingress/egress operations. |
Use Scenario: Acting as frame buffer in E1/T1 or SONET/SDH framer modules handling time-division multiplexed traffic. IC Role / Device Role / Timing Role: Burst-capable SRAM storing interleaved channel data with linear burst mode aligned to TDM slot boundaries. Use Value: Reduces controller overhead by 75% per burst transfer, improving framer throughput and reducing CPU load. |
| Industrial PLC Data Log | Radar Signal Processing FIFO |
|
Use Scenario: Capturing sensor event logs in programmable logic controllers operating in harsh industrial environments. IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) SRAM with ZZ sleep mode for low-power data retention during idle periods. Use Value: Maintains log integrity during brownouts or scheduled sleep, with fast wake-up and deterministic access upon resumption. |
Use Scenario: Buffering digitized IF samples in pulsed radar receivers requiring burst-aligned capture and low-latency readout. IC Role / Device Role / Timing Role: Flow-through output SRAM delivering ADC samples to DSP with minimal pipeline delay; LBO selects interleaved burst for FFT-friendly addressing. Use Value: Matches radar pulse repetition intervals with burst-aligned reads, avoiding sample gaps or FIFO overflow under burst load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-100AXC | 256K × 36, 100 MHz, but uses QDR-II architecture with separate read/write ports and no ZBT mode | Requires dual-port controller logic; lacks zero-turnaround benefit for single-bus systems | Prefer 71V65703S85BQG when ZBT timing and single-bus simplicity are required |
| AS7C3256B-10JIN | 256K × 36, 10 ns access, asynchronous interface - no clock, no burst, no ZBT | Higher latency, no burst efficiency, incompatible timing model; suitable only for legacy non-synchronous designs | Choose 71V65703S85BQG for new designs needing deterministic 100 MHz synchronous operation and burst support |
Compared with CY7C1362BV33-100AXC and AS7C3256B-10JIN, the 71V65703S85BQG uniquely delivers zero bus turnaround within a single-port synchronous interface - reducing system-level latency and simplifying controller design for burst-intensive, real-time applications.
Availability
71V65703S85BQG is available at Aetrix Electronics and suitable for networking switch buffers, telecom line card caches, industrial PLC data logs, radar signal processing FIFOs, and high-reliability embedded systems requiring stable component supply across extended product lifecycles.
Supply support for 71V65703S85BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V65703S85BQG belongs to IDT's ZBT™ SRAM product line, designed specifically for bandwidth-constrained, low-latency applications in packet infrastructure and real-time signal processing where bus turnaround overhead must be eliminated.
FAQ
What is the memory organization of the 71V65703S85BQG?
The 71V65703S85BQG is configured exclusively as 256K × 36 bits (9.44 Mbit). Unlike the family's dual-configuration variants (e.g., 71V65903), this part does not support 512K × 18 mode. The pinout and internal array are fixed to the 256K × 36 layout, confirmed by PKG100 pin diagrams and functional block diagrams in the datasheet.
Does the 71V65703S85BQG support both linear and interleaved burst modes?
Yes, the 71V65703S85BQG supports both burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, it selects linear burst order; when driven HIGH, it selects interleaved. This selection is static and must remain stable during burst operation, as defined in the Linear and Interleaved Burst Sequence Tables.
What is the role of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S85BQG?
The 71V65703S85BQG uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. The device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously. This triple-enable scheme allows flexible depth expansion and hierarchical decoding in multi-SRAM systems without external logic.
How does the ZBTTM feature improve system performance in the 71V65703S85BQG?
ZBTTM (Zero Bus Turnaround) in the 71V65703S85BQG eliminates mandatory idle cycles between read and write operations. A write cycle can be immediately followed by a read (or vice versa) on the next clock edge - enabling continuous data flow in full-duplex applications like packet buffering, where bus efficiency directly impacts throughput.
Is the 71V65703S85BQG compatible with industrial temperature requirements?
Yes, the 71V65703S85BQG is rated for industrial temperature operation from –40°C to +85°C. This rating is explicitly stated in the "Recommended Operating Temperature and Supply Voltage" table and verified across DC/AC electrical characteristics, making it suitable for deployment in uncontrolled ambient environments such as base stations and factory automation equipment.
71V65703S85BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V65703S85BQG FAQ
1.How can I place an order for 71V65703S85BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65703S85BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65703S85BQG reliable?
The price and inventory of 71V65703S85BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65703S85BQG is usually 5 days.
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Once your 71V65703S85BQG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65703S85BQG?
For technical support, including 71V65703S85BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65703S85BQG requirements.
6.How does Aetrix verify that 71V65703S85BQG is sourced from the original manufacturer or authorized distributors?
All 71V65703S85BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65703S85BQG meets industry standards.
7.What is the process for return or replacement of 71V65703S85BQG?
All 71V65703S85BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V65703S85BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65703S85BQG part is unused and in its original packaging.
Return procedure for 71V65703S85BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65703S85BQG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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