Renesas 71V65703S85BQGI

Overview

71V65703S85BQGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA-based data path acceleration.

For engineers reviewing the 71V65703S85BQGI datasheet, 71V65703S85BQGI pinout, 71V65703S85BQGI application, or 71V65703S85BQGI equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), asynchronous OE/ZZ for output disable and sleep mode, and JEDEC-standard 165-ball fine-pitch BGA (BQG165) packaging with industrial temperature range (–40°C to +85°C).

Technical Context

The 71V65703S85BQGI implements a synchronous dual-edge-triggered architecture with registered address/control inputs and flow-through data outputs - no output register - enabling deterministic timing. Its on-chip burst counter advances on ADV/LD = HIGH, supporting four-word bursts with LBO-selectable linear or interleaved addressing sequences.

It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, single R/W control, and internally synchronized OE elimination - removing external OE timing constraints. Clock Enable (CEN) suspends all synchronous operations while preserving internal state, and ZZ input gates CLK to enter low-power sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

71V65703S85BQGI is packaged in a JEDEC-standard 165-ball fine-pitch ball grid array (BQG165), 13 mm × 15 mm footprint, 0.8 mm ball pitch, with VDD/VDDQ and VSS distributed across multiple balls for low-impedance power delivery and EMI reduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-100AXC and AS7C3256A-10JCN, the 71V65703S85BQGI delivers unique value through its flow-through output architecture and hardware burst counter - eliminating output registers and external address sequencers - making it optimal for latency-critical, high-bandwidth buffering where deterministic timing and reduced controller overhead are mandatory.

Availability

71V65703S85BQGI is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and telecommunications equipment requiring stable component supply, long-term lifecycle support, and industrial-grade thermal reliability.

Supply support for 71V65703S85BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V65703S85BQGI belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in packet-processing, switching, and real-time control systems demanding deterministic timing and burst efficiency.

FAQ

What is the memory organization and density of the 71V65703S85BQGI?

The 71V65703S85BQGI is organized as 256K × 36, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration supports 36-bit wide data paths ideal for network processor interfaces and FPGA co-processing. The device shares pin compatibility with the 512K × 18 variant (71V65903), allowing layout reuse across density options.

Does the 71V65703S85BQGI support burst read and write operations?

Yes, the 71V65703S85BQGI supports four-word burst operations in both read and write modes. Burst sequencing is controlled by the ADV/LD and LBO pins: ADV/LD = HIGH advances the internal counter, and LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) order. Burst mode reduces address bus activity and controller overhead significantly.

What is the role of the ZZ pin on the 71V65703S85BQGI?

The ZZ pin on the 71V65703S85BQGI is an asynchronous sleep mode input. When driven HIGH, it internally gates the CLK signal and places the device in ultra-low-power sleep mode with ICC ≤ 10 µA, while guaranteeing full data retention. This feature is essential for power-sensitive telecom and industrial applications requiring rapid wake-up without data loss.

How does the ZBT™ (Zero Bus Turnaround) feature work in the 71V65703S85BQGI?

ZBT™ eliminates idle cycles between successive read and write operations. Unlike conventional SRAMs that require bus turnaround time, the 71V65703S85BQGI transitions directly from a read to a write (or vice versa) on consecutive clocks - enabled by internal synchronization and flow-through outputs - increasing effective bus utilization by up to 30% in mixed-access scenarios.

What package type and footprint does the 71V65703S85BQGI use?

The 71V65703S85BQGI uses a 165-ball fine-pitch BGA (BQG165) package, measuring 13 mm × 15 mm with 0.8 mm ball pitch. This JEDEC-standard footprint supports high-density routing and thermal dissipation in compact networking and industrial modules, and is distinct from the 100-pin TQFP and 119-ball BGA variants offered in the same family.