Renesas 71V65703S85BQGI8

Overview

71V65703S85BQGI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 100 MHz clock frequency, 7.5 ns clock-to-data access time, zero bus turnaround (ZBT) architecture, and flow-through outputs. It serves as high-speed buffer/cache memory in network switches, telecom line cards, and packet processing systems requiring burst read/write without dead cycles.

For engineers reviewing the 71V65703S85BQGI8 datasheet, 71V65703S85BQGI8 pinout, 71V65703S85BQGI8 application, or 71V65703S85BQGI8 equivalent, this page delivers verified timing parameters, TQFP-100 pin mapping, industrial-grade temperature support (–40°C to +85°C), burst mode behavior (linear/interleaved), and byte-write control - all critical for DDR-adjacent memory subsystem design and legacy ZBT migration.

Technical Context

The 71V65703S85BQGI8 implements a synchronous, clock-driven interface with registered address/control inputs and flow-through data outputs - eliminating output registers to minimize read latency. Its on-chip 4-word burst counter advances on ADV/LD = HIGH, with sequence order determined by static LBO pin state.

ZBT operation is enabled via three chip enables (CE1, CE2 active-low; CE2 active-high), single R/W control, and internally synchronized OE - removing external OE timing constraints. Power-down is managed asynchronously via ZZ input, guaranteeing data retention during sleep mode while gating internal clock paths.

Key Specifications

Pinout & Package

71V65703S85BQGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch and exposed thermal pad (per PKG100 footprint). Pin functions are fully synchronized except OE (asynchronous) and ZZ (asynchronous sleep).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V65703S85BQGI (commercial grade), the 71V65703S85BQGI8 adds guaranteed industrial temperature operation without sacrificing speed or features; versus 71V65903S85BQGI8, it provides higher data width (36-bit vs. 18-bit) at identical clock rate - optimizing bandwidth for parallel bus architectures.

Availability

71V65703S85BQGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data caching requiring stable component supply across extended production lifecycles.

Supply support for 71V65703S85BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S85BQGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in high-speed networking and telecom infrastructure where deterministic burst access and minimal bus turnaround are mandatory.

FAQ

What is the memory organization and total capacity of the 71V65703S85BQGI8?

The 71V65703S85BQGI8 is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration supports 36-bit parallel data transfers and is optimized for systems requiring high-bandwidth buffering with minimal address overhead - such as network switch fabric interfaces and packet processors. The device also shares pinout and timing compatibility with the 512K × 18 variant (71V65903S85BQGI8) for flexible design reuse.

Does the 71V65703S85BQGI8 support burst read and write operations, and how is burst order controlled?

Yes, the 71V65703S85BQGI8 supports 4-word burst operations in both read and write modes. Burst sequence order - either linear or interleaved - is selected by the static LBO (Linear/Interleaved Burst Order) input pin: LBO = LOW selects linear order, while LBO = HIGH selects interleaved order. The burst counter advances on each rising CLK edge when ADV/LD = HIGH, and the initial address is loaded when ADV/LD = LOW - enabling seamless integration with burst-capable processors or DMA engines.

How does the Zero Bus Turnaround (ZBT) feature work in the 71V65703S85BQGI8, and what benefit does it provide?

The ZBT feature in the 71V65703S85BQGI8 eliminates idle bus cycles between consecutive read and write operations - allowing immediate transition from one memory access to the next without wait states. This is achieved through internal arbitration and output driver control logic that manages bus direction and timing autonomously. The result is sustained 100 MHz throughput with no dead cycles, significantly improving effective bandwidth in high-speed packet buffering and real-time signal processing applications.

What are the power supply requirements and thermal specifications for the 71V65703S85BQGI8?

The 71V65703S85BQGI8 requires two separate 3.3 V supplies: VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O drivers. It operates across the industrial temperature range of –40°C to +85°C, with data retention guaranteed in sleep mode (ZZ = HIGH). Power dissipation is rated at ≤2.0 W maximum, and thermal design must accommodate the 100-pin TQFP package's thermal characteristics under sustained 100 MHz operation.

Can the 71V65703S85BQGI8 be used with a 100 MHz system clock, and what is its actual clock-to-data access time?

Yes, the 71V65703S85BQGI8 is fully rated for 100 MHz operation, with a guaranteed clock-to-data access time (tCD) of 7.5 ns. This parameter is measured from the rising edge of CLK to valid data appearing on the I/O bus during a read cycle - confirming deterministic sub-10 ns latency critical for tight-timing applications like telecom framer buffers and real-time control loops.