Renesas 71V65703S85BQI

Overview

71V65703S85BQI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access. It implements Zero Bus Turnaround for dead-cycle-free read/write transitions, supports 4-word interleaved or linear burst, and features flow-through outputs with asynchronous OE control. It is used in high-speed packet buffering and cache applications in networking ASICs and FPGA-based data path systems.

For engineers reviewing the 71V65703S85BQI datasheet, 71V65703S85BQI pinout, 71V65703S85BQI application, or 71V65703S85BQI equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O compatibility, industrial temperature support (–40°C to +85°C), TQFP-100 packaging, and byte-write granularity across four 9-bit data groups.

Technical Context

The 71V65703S85BQI uses a synchronous CMOS architecture with registered address/control inputs and flow-through data outputs - no output register - enabling deterministic 1-cycle latency from clock edge to valid Q. Its internal burst counter advances on ADV/LD = HIGH, with burst order selected by static LBO pin (LOW = linear, HIGH = interleaved).

It integrates three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, supports power-down via asynchronous ZZ input, and employs separate VDD (core) and VDDQ (I/O) supplies. Clock Enable (CEN) suspends all synchronous operations while preserving register state, and individual BW1–BW4 pins enable per-byte write control without external logic.

Key Specifications

Pinout & Package

71V65703S85BQI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, with exposed pad not electrically connected. Pin functions are synchronized to CLK except OE (asynchronous) and LBO/ZZ (static/asynchronous). All address, control, and data inputs meet setup/hold timing relative to CLK rising edge.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-100AXC and AS7C3256B-10JIN, the 71V65703S85BQI uniquely delivers zero-turnaround burst operation on a single clock domain - enabling simpler controller design and higher effective bandwidth in sequential-access scenarios common in packet and stream processing.

Availability

71V65703S85BQI is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA-based data path caching, telecom baseband processing, and industrial real-time control applications requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.

Supply support for 71V65703S85BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, RF, and high-performance mixed-signal ICs for communications, computing, and industrial markets.

The 71V65703S85BQI belongs to IDT's ZBT™ SRAM product line, designed specifically for high-speed, low-latency, burst-oriented memory applications in networking, telecom, and real-time embedded systems where deterministic timing and bus efficiency are critical.

FAQ

What memory organization does the 71V65703S85BQI support?

The 71V65703S85BQI is fixed at 256K × 36 (9,437,184 bits) and does not support reconfiguration to 512K × 18. This organization is hardwired in silicon and verified in the functional block diagram and pin configuration diagrams for PKG100. The 71V65703S85BQI uses A0–A17 for addressing and leaves A18 unconnected in this variant.

Does the 71V65703S85BQI support both linear and interleaved burst modes?

Yes, the 71V65703S85BQI supports both burst orders via the LBO pin: LOW selects linear (0,1,2,3), HIGH selects interleaved (0,2,1,3). This is confirmed in the Linear/Interleaved Burst Sequence Tables and Pin Definitions, where LBO is explicitly defined as a static input that must remain stable during burst operation.

What is the role of the ZZ pin on the 71V65703S85BQI?

The ZZ pin on the 71V65703S85BQI is an asynchronous active-high sleep mode input. When asserted, it internally gates the clock and reduces ICC to ≤5 µA while guaranteeing data retention - confirmed in Absolute Maximum Ratings, Pin Definitions, and DC Electrical Characteristics tables. It requires no clock alignment or sequencing.

Can the 71V65703S85BQI operate with only one power supply?

No - the 71V65703S85BQI requires two independent 3.3 V ±5% supplies: VDD for core logic and VDDQ for I/O drivers. This separation is specified in Recommended DC Operating Conditions and Functional Block Diagrams, and mixing or tying them together violates the absolute maximum ratings and risks timing violations or excessive noise coupling.

How many chip enable signals does the 71V65703S85BQI have, and what are their polarities?

The 71V65703S85BQI has three chip enable signals: CE1 and CE2 are active-low, while CE2 is active-high. This configuration is documented in Pin Description Summary, Pin Definitions, and Synchronous Truth Table - enabling flexible depth expansion without external inverters when combining multiple devices.