Renesas 71V65703S85BQI8

Overview

71V65703S85BQI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9.44 Mbit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround (ZBT) for dead-cycle-free read/write transitions, and flow-through outputs. It serves as high-speed buffer or cache memory in networking switches, telecom line cards, and packet processing engines requiring deterministic latency and burst data throughput.

For engineers reviewing the 71V65703S85BQI8 datasheet, 71V65703S85BQI8 pinout, 71V65703S85BQI8 application, or 71V65703S85BQI8 equivalent, key selection criteria include its 100 MHz synchronous interface, 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), industrial temperature range (–40°C to +85°C), and JEDEC-standard 165-ball fine-pitch BGA (fBGA) package.

Technical Context

The 71V65703S85BQI8 implements a synchronous, clocked architecture where address/control inputs are registered on the rising CLK edge, and data transfers occur one cycle later. Its internal burst counter-controlled by ADV/LD and LBO-enables automatic address sequencing for four consecutive words without external address incrementing.

ZBT functionality eliminates bus turnaround delay: a write cycle can be immediately followed by a read (or vice versa) without tri-state gaps, enabled by internally synchronized output buffer enable and single R/W control. The device supports depth expansion via three chip enables (CE1, CE2, CE2) and power management via asynchronous ZZ sleep mode and synchronous CEN clock gating.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 165-ball fine-pitch ball grid array (fBGA), the 71V65703S85BQI8 uses a 12×14 array with corner balls omitted (BQ165 package). Pin functions are fully defined per the official IDT 71V65703 datasheet revision Oct.18.21, with dedicated I/O banks, dual VDDQ/VSS pairs per quadrant, and static control pins (LBO, ZZ) decoupled from clock domain timing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-100BGXI and AS7C3256A-10JIN, the 71V65703S85BQI8 uniquely delivers zero bus turnaround at 100 MHz with integrated burst counter and byte-select writes-making it optimal for latency-sensitive, burst-oriented packet and signal processing applications where deterministic timing outweighs port concurrency or simplicity.

Availability

71V65703S85BQI8 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, industrial PLC real-time data caches, and radar signal processing FIFOs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V65703S85BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S85BQI8 belongs to IDT's ZBT™ SRAM product line, designed specifically for applications demanding zero-latency bus turnaround, burst data throughput, and deterministic synchronous timing in high-speed digital systems.

FAQ

What is the memory organization and total capacity of the 71V65703S85BQI8?

The 71V65703S85BQI8 is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This configuration provides a 36-bit-wide data bus ideal for systems requiring wide parallel access, such as packet processors and digital signal controllers. The 18 address lines (A0–A17) directly map to the 256K depth, with no address multiplexing.

Does the 71V65703S85BQI8 support burst read and write operations, and how is burst order controlled?

Yes, the 71V65703S85BQI8 supports 4-word burst operations in both read and write modes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The ADV/LD signal controls whether a new external address is loaded (LOW) or the internal counter advances (HIGH).

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S85BQI8?

The 71V65703S85BQI8 uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. All three must be asserted simultaneously (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This triple-enable scheme allows flexible depth expansion across multiple SRAMs using minimal external logic, and supports hierarchical deselect with one-cycle bus release.

How does the ZBTTM feature eliminate dead cycles between read and write operations in the 71V65703S85BQI8?

ZBTTM (Zero Bus Turnaround) in the 71V65703S85BQI8 removes the traditional high-impedance gap between read and write cycles. By internally synchronizing output buffer enable and using a single R/W control pin, the device transitions directly from one operation to the next on consecutive clock edges-enabling true back-to-back R/W without bus contention or wait states.

What package type and ball count does the 71V65703S85BQI8 use, and is it RoHS-compliant?

The 71V65703S85BQI8 is packaged in a 165-ball fine-pitch BGA (fBGA), designated BQ165 per IDT documentation. It conforms to JEDEC MO-244 standards and is RoHS-compliant ("green parts" per datasheet). The package features symmetric VDDQ/VSS distribution and dedicated I/O power domains to minimize switching noise in high-speed applications.