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Renesas 71V65703S85PFG8
- Part No.:
- 71V65703S85PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V65703S85PFG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,743
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Product details
Overview
71V65703S85PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 (9,437,184-bit), delivering 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer or cache memory in networking switches, packet processors, and FPGA-based data-path acceleration where deterministic latency and burst efficiency are critical.
For engineers reviewing the 71V65703S85PFG8 datasheet, 71V65703S85PFG8 pinout, 71V65703S85PFG8 application, or 71V65703S85PFG8 equivalent, key selection criteria include ZBT™ burst capability (linear/interleaved), individual byte write control (BW1–BW4), asynchronous OE/ZZ support, JEDEC-standard 100-pin TQFP packaging, and industrial temperature range (–40°C to +85°C) compliance.
Technical Context
The 71V65703S85PFG8 implements a synchronous, clock-driven architecture with registered address/control inputs and flow-through data outputs-no output register-enabling predictable timing. Its on-chip burst counter advances on ADV/LD = HIGH, supporting four-word bursts with LBO-selectable linear or interleaved addressing sequences.
It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, single R/W control, and internally synchronized OE elimination-removing external OE timing constraints. Power management includes asynchronous ZZ sleep mode for data retention at minimal current draw.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 (9.4 Mbit); supports high-bandwidth 36-bit data path without width expansion |
| Clock Frequency | 100 MHz; enables 10 ns cycle time for real-time packet buffering in telecom line cards |
| Access Time | 7.5 ns clock-to-data; guarantees deterministic read latency for time-critical control-plane logic |
| ZBT™ Feature | No dead cycles between read/write transitions; eliminates bus turnaround overhead in burst-intensive traffic shaping |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; compatible with standard 3.3V I/O domains and mixed-voltage SoC interfaces |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade deployment in base station and industrial automation equipment |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus activity by 75% per burst sequence in streaming applications |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, lead-free and RoHS-compliant (PFG suffix). Pinout validated per IDT document 5298 drw 02 (256K × 36 configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Rising-edge-triggered master timing reference; all synchronous operations aligned to this edge |
| A0–A17 | Address inputs | 18-bit address bus for 256K depth; no A18 required in 256K × 36 mode |
| R/W | Read/Write control | Single synchronous signal defining cycle type; data transfer occurs one clock later |
| ADV/LD | Advance burst / Load address | LOW loads new external address; HIGH increments internal burst counter-core to ZBT™ burst sequencing |
| BW1–BW4 | Byte write enables | Four independent active-low controls for 9-bit byte writes; enables partial-word updates without read-modify-write |
| CE1, CE2, CE2 | Chip enable inputs | Three enables (CE1/CE2 low, CE2 high) allow seamless depth expansion across multiple devices |
| OE | Asynchronous output enable | Active-low; tri-states outputs independently of clock-simplifies bus sharing and hot-swap isolation |
| ZZ | Asynchronous sleep mode | Active-high; gates internal clock and reduces ICC to standby level while retaining memory contents |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O bus | 36-bit bidirectional flow-through interface; no output register-output valid after fixed tCO delay |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between consecutive reads and writes-critical for back-to-back packet buffering in switch fabric controllers |
| Flow-through output architecture | Removes output register latency; enables immediate data availability on clock edge-reduces pipeline stalls in real-time systems |
| 4-word burst with LBO select | LBO pin configures linear (LBO = LOW) or interleaved (LBO = HIGH) burst order-matches CPU/FPGA burst patterns without software overhead |
| Individual byte write (BW1–BW4) | Enables precise 9-bit sub-word writes-avoids full-word overwrites in protocol header manipulation or status field updates |
| Internally synchronized OE | OE assertion does not require timing coordination with CLK-simplifies PCB layout and eliminates OE skew constraints |
| Three chip enables (CE1/CE2/CE2) | Supports up to 8-device depth expansion using standard logic-enables scalable memory subsystems without glue logic |
Applications
| High-Speed Network Switch Buffer | FPGA-Based Packet Processor Cache |
|---|---|
|
Use Scenario: Storing ingress/egress packet descriptors and metadata in Layer 2/3 switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: Primary 36-bit wide, low-latency SRAM buffer interfacing directly to switch fabric controller and packet parser logic. Use Value: 7.5 ns tCO and ZBT™ eliminate bus turnaround gaps-ensuring sub-10 ns deterministic read/write switching for 10 Gbps+ line rates. |
Use Scenario: Acting as instruction/data cache for soft-core processors (e.g., MicroBlaze) embedded in Xilinx FPGAs performing deep packet inspection. IC Role / Device Role / Timing Role: Synchronous burst-access memory mapped into FPGA's AXI or PLB bus, synchronized to system clock domain. Use Value: 4-word burst mode reduces address bus toggling by 75%-lowering dynamic power and EMI in dense FPGA mezzanine modules. |
| Industrial PLC Real-Time Data Log | Telecom Baseband Signal Processing Buffer |
|
Use Scenario: Capturing sensor timestamped values and control actuator states in deterministic industrial PLCs requiring guaranteed data retention at –40°C. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM buffer holding last-known-good state during brown-out events; interfaced via microcontroller parallel bus. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation and low-power retention during extended power-loss intervals. |
Use Scenario: Temporary storage of IQ samples between ADC/DAC stages and DSP cores in 4G/5G remote radio units (RRUs). IC Role / Device Role / Timing Role: High-throughput, low-jitter memory buffer synchronizing multi-channel sample streams across FPGA-based digital front-end blocks. Use Value: Flow-through outputs and 100 MHz clocking provide jitter-free sample handoff-preserving SNR integrity in 100+ MS/s RF sampling paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-100AXC | 256K × 36, 100 MHz, but uses pipelined (not flow-through) outputs; tCO = 4.5 ns vs. 7.5 ns; no ZBT™-requires external OE control | Lacks zero bus turnaround; requires additional timing control logic for read/write interleaving in burst-heavy systems | Prefer when absolute minimum output latency dominates over bus efficiency; verify OE timing integration effort |
| AS7C3256B-10JIN | 256K × 36, 10 ns access, 3.3V, but asynchronous interface; no burst counter, no ADV/LD or BWx pins; no ZZ sleep mode | Suitable only for non-burst, non-synchronous control-plane memory-not viable for high-speed data-path buffering | Select only for legacy designs requiring pin-compatible drop-in replacement with relaxed timing and no burst requirements |
Compared with CY7C1362BV33-100AXC and AS7C3256B-10JIN, the 71V65703S85PFG8 uniquely delivers ZBT™-enabled bus efficiency, flow-through determinism, and industrial-grade reliability-making it optimal for next-generation packet-forwarding and real-time signal processing where both bandwidth and timing predictability are mandatory.
Availability
71V65703S85PFG8 is available at Aetrix Electronics and suitable for high-speed network switch buffers, FPGA-based packet processor caches, industrial PLC real-time data logs, and telecom baseband signal processing buffers requiring stable component supply across long production lifecycles.
Supply support for 71V65703S85PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V65703S85PFG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, burst-optimized memory subsystems in high-throughput data-path applications such as routers, switches, and baseband processors.
FAQ
What is the memory organization and total capacity of the 71V65703S85PFG8?
The 71V65703S85PFG8 is organized as 256K × 36, providing 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This configuration delivers a native 36-bit data bus width-ideal for applications requiring wide-word access without multiplexing or external width expansion logic.
Does the 71V65703S85PFG8 support burst read and write operations, and how is burst order controlled?
Yes, the 71V65703S85PFG8 supports 4-word burst operations in both read and write modes. Burst order-linear or interleaved-is selected by the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved (A0, A2, A1, A3), matching common CPU and FPGA burst protocols.
How does the ZBTTM (Zero Bus Turnaround) feature function in the 71V65703S85PFG8?
ZBTTM eliminates idle cycles between successive read and write operations. When transitioning from a read to a write (or vice versa), the 71V65703S85PFG8 immediately accepts the next command on the subsequent clock edge-no wait states or bus release/reacquisition-enabling continuous data flow in packet buffering and streaming applications.
What are the power supply requirements and thermal specifications for the 71V65703S85PFG8?
The 71V65703S85PFG8 requires two 3.3 V supplies: VDD (core, 3.135–3.465 V) and VDDQ (I/O, 3.135–3.465 V). It operates across the industrial temperature range of –40°C to +85°C and supports low-power sleep mode via the asynchronous ZZ pin, maintaining data retention at reduced ICC.
Can the 71V65703S85PFG8 be used in depth-expanded memory configurations, and how many devices can be cascaded?
Yes, the 71V65703S85PFG8 supports depth expansion using its three chip enable inputs: CE1 and CE2 (active-low) and CE2 (active-high). By combining these enables with address decoding logic, up to eight devices can be seamlessly cascaded to build larger memory arrays-e.g., 2M × 36-without external bus transceivers or glue logic.
71V65703S85PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V65703S85PFG8 FAQ
1.How can I place an order for 71V65703S85PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65703S85PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65703S85PFG8 reliable?
The price and inventory of 71V65703S85PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65703S85PFG8 is usually 5 days.
3.What payment methods are accepted for 71V65703S85PFG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65703S85PFG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65703S85PFG8?
71V65703S85PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65703S85PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65703S85PFG8?
For technical support, including 71V65703S85PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65703S85PFG8 requirements.
6.How does Aetrix verify that 71V65703S85PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V65703S85PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65703S85PFG8 meets industry standards.
7.What is the process for return or replacement of 71V65703S85PFG8?
All 71V65703S85PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65703S85PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65703S85PFG8 part is unused and in its original packaging.
Return procedure for 71V65703S85PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65703S85PFG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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