Renesas 71V65703S85PFGI

Overview

71V65703S85PFGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K x 36 (9.44 Mbit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround between read/write cycles, and flow-through outputs. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA-based data path acceleration where deterministic latency and burst efficiency are critical.

For engineers reviewing the 71V65703S85PFGI datasheet, 71V65703S85PFGI pinout, 71V65703S85PFGI application, or 71V65703S85PFGI equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 industrial-grade packaging, 3.3V core/I/O supply tolerance, linear/interleaved burst order control via LBO, and support for individual byte write (BW1–BW4) in high-reliability embedded systems.

Technical Context

The 71V65703S85PFGI implements a synchronous, clocked architecture with registered address/control inputs and flow-through data outputs-no output register-enabling immediate data availability one cycle after read initiation. Its on-chip burst counter supports 4-word interleaved or linear sequences controlled by ADV/LD and LBO, eliminating dead cycles during bus turnaround.

Three chip enables (CE1, CE2 active-low; CE2 active-high) allow flexible depth expansion, while CEN suspends all synchronous operation without affecting output state. The device uses separate VDD (3.3V core) and VDDQ (3.3V I/O) supplies, with ZZ enabling asynchronous sleep mode for low-power retention.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant (PFGI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C3256B, the 71V65703S85PFGI uniquely delivers 256K × 36 density with ZBTTM burst efficiency, individual byte write, and industrial temperature support - making it irreplaceable in high-performance, space-constrained telecom and networking datapaths requiring deterministic timing and flexible bus width.

Availability

71V65703S85PFGI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial networking equipment, and FPGA-based acceleration platforms requiring stable component supply, long-term lifecycle assurance, and industrial-grade reliability.

Supply support for 71V65703S85PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65703S85PFGI belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet processing, switching, and real-time signal buffering applications.

FAQ

What is the memory organization and total capacity of the 71V65703S85PFGI?

The 71V65703S85PFGI is organized as 256K × 36, delivering 9,437,184 bits (9.44 Mbit) of synchronous SRAM. This configuration supports 36-bit wide data paths ideal for high-bandwidth applications like network packet buffering and FPGA co-processing. It shares pinout and timing compatibility with the 512K × 18 variant (71V65903), allowing flexible density scaling within the same footprint.

Does the 71V65703S85PFGI support burst read and write operations, and how is burst order selected?

Yes, the 71V65703S85PFGI supports 4-word synchronous bursts in both read and write modes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW configures linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). This selection is static and must remain stable during burst execution to avoid undefined behavior in the 71V65703S85PFGI.

How does the ZBTTM (Zero Bus Turnaround) feature function in the 71V65703S85PFGI?

ZBTTM eliminates idle bus cycles when transitioning between read and write operations. In the 71V65703S85PFGI, a write cycle can immediately follow a read (or vice versa) without requiring wait states or bus release/reacquisition. This is achieved through internal synchronization of R/W, ADV/LD, and chip enables - resulting in up to 33% higher effective bus utilization compared to conventional synchronous SRAMs.

What are the power supply requirements for the 71V65703S85PFGI, and is separate core/I/O regulation required?

The 71V65703S85PFGI requires two independent 3.3 V supplies: VDD (core logic, ±5%) and VDDQ (I/O drivers, ±5%). While they share the same nominal voltage, separation is mandatory - VDD powers internal registers and control logic, while VDDQ drives the 36-bit I/O bus. This isolation minimizes switching noise coupling and ensures signal integrity, especially under burst-mode I/O activity in the 71V65703S85PFGI.

Can the 71V65703S85PFGI operate in low-power mode, and how is it enabled?

Yes, the 71V65703S85PFGI supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated, reducing dynamic power consumption significantly while maintaining full data retention across the industrial temperature range (−40°C to +85°C). No clock stopping sequence or register programming is needed - activation is immediate and transparent to ongoing memory state in the 71V65703S85PFGI.