Renesas 71V65703S85PFGI8

Overview

71V65703S85PFGI8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM organized as 256K × 36 bits (9.44 Mbit), supporting 100 MHz operation with 7.5 ns clock-to-data access, zero bus turnaround (ZBT) architecture, and flow-through outputs. It serves as high-speed buffer/cache memory in network packet processors, telecom line cards, and FPGA-based data-path acceleration where burst reads/writes and minimal bus dead cycles are critical.

For engineers reviewing the 71V65703S85PFGI8 datasheet, 71V65703S85PFGI8 pinout, 71V65703S85PFGI8 application, or 71V65703S85PFGI8 equivalent, key selection criteria include its 100 MHz synchronous timing, 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP package with 3.3V core/I/O supplies.

Technical Context

The 71V65703S85PFGI8 implements a synchronous dual-edge-triggered interface with registered address/control inputs and flow-through (unregistered) data outputs. Its on-chip burst counter advances on ADV/LD = HIGH, enabling four consecutive data transfers per address load - sequence order determined by static LBO pin state (linear or interleaved).

ZBT operation eliminates bus turnaround latency: a read cycle can immediately follow a write (or vice versa) without idle cycles, enabled by internally synchronized output buffer enable and single R/W control. Chip select is managed via three independent enables (CE1, CE2 active-low; CE2 active-high), supporting depth expansion without external logic.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout conforms to PKG100 configuration for 256K × 36 mode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100AXC and AS7C3256A-10JIN, the 71V65703S85PFGI8 uniquely delivers ZBT operation with single R/W control and flow-through outputs in a standard parallel interface - enabling simpler timing design and higher effective bandwidth in burst-oriented data-path applications without QDR complexity or async latency penalties.

Availability

71V65703S85PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and industrial motion controller buffer applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V65703S85PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The 71V65703S85PFGI8 belongs to IDT's ZBT™ SRAM product line, designed specifically for high-speed networking and data-intensive embedded systems demanding deterministic latency, burst efficiency, and seamless bus turnaround.

FAQ

What is the maximum operating frequency of the 71V65703S85PFGI8?

The 71V65703S85PFGI8 is rated for 100 MHz operation, corresponding to a 10 ns clock period. This is validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The 7.5 ns clock-to-data access time (tCD) ensures data validity within the first half of the clock cycle, enabling tight timing margins in high-speed designs.

Does the 71V65703S85PFGI8 support both linear and interleaved burst modes?

Yes, the 71V65703S85PFGI8 supports both burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the device executes linear addressing (A0, A1, A2, A3); when LBO = HIGH, it uses interleaved order (A0, A2, A1, A3). This selection is static and must be fixed before burst initiation - it cannot be changed mid-burst.

How does the ZBTTM feature eliminate bus turnaround cycles in the 71V65703S85PFGI8?

The 71V65703S85PFGI8 achieves zero bus turnaround by decoupling output enable from clock timing: its internally synchronized OE eliminates external OE control, and the single R/W pin allows immediate transition between read and write operations. A write cycle ending at clock edge n+1 permits a read cycle to begin at n+2 with no intervening idle cycle - confirmed in the functional timing diagrams and synchronous truth table.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65703S85PFGI8?

The 71V65703S85PFGI8 uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. All three must be asserted (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This configuration allows flexible depth expansion: multiple devices can share address/control buses while using unique CE combinations to isolate access - reducing or eliminating need for external decode logic.

Can the 71V65703S85PFGI8 operate in a reduced-power mode without losing data?

Yes, the 71V65703S85PFGI8 supports data-retentive sleep mode via the asynchronous ZZ pin. When ZZ = HIGH, the internal clock is gated and core power drops significantly, while SRAM contents remain intact. Data retention is guaranteed across the full industrial temperature range. Exiting sleep requires only ZZ = LOW followed by one valid clock cycle - no reset or initialization sequence is needed.