Renesas 71V65803S100BG

Overview

71V65803S100BG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature (–40°C to +85°C). Used in high-speed networking buffers, packet switching ASIC interfaces, and FPGA co-processor memory subsystems.

For engineers reviewing the 71V65803S100BG datasheet, 71V65803S100BG pinout, 71V65803S100BG application, or 71V65803S100BG equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, industrial-grade thermal performance, and byte-write enable (BW1–BW4) control for partial-word writes.

Technical Context

The 71V65803S100BG implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising edge of CLK. Its ZBT™ feature eliminates dead cycles between read/write transitions via internal burst counter management and ADV/LD-controlled address loading or incrementing.

It uses a dual-supply design (VDD = 3.3 V ±5% for core logic, VDDQ = 3.3 V ±5% for I/O), supports asynchronous OE and ZZ inputs for output enable and sleep mode, and provides individual byte write enables (BW1–BW4) for selective 9-bit word updates without full 36-bit bus contention.

Key Specifications

Pinout & Package

71V65803S100BG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 marked by corner notch or dot; top-side marking includes "71V65803S100BG" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1372KV18 and AS7C3256P, the 71V65803S100BG uniquely delivers ZBT™-enabled 150 MHz burst throughput in a manufacturable TQFP package, making it optimal for new industrial and networking designs demanding deterministic latency and high bus efficiency.

Availability

71V65803S100BG is available at Aetrix Electronics and suitable for high-speed network packet buffers, FPGA-based protocol accelerators, and industrial motion controllers requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V65803S100BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S100BG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking equipment, telecom infrastructure, and real-time industrial control systems.

FAQ

What is the maximum operating frequency of the 71V65803S100BG?

The 71V65803S100BG is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The 3.8 ns clock-to-data access time reflects its optimized pipelined output architecture, enabling deterministic timing in high-speed synchronous systems.

Does the 71V65803S100BG support both 256K × 36 and 512K × 18 configurations?

Yes, the 71V65803S100BG supports both memory organizations. The 256K × 36-bit mode is the default configuration for the S100BG variant (100-pin TQFP), while the 512K × 18-bit mode is achieved via pin strapping and functional mapping - confirmed in the device's functional block diagrams and pin configuration tables for PKG100. Both modes retain ZBT™, burst, and pipelined features.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S100BG?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S100BG eliminates dead cycles by allowing immediate transition between read and write operations without bus idle time. This is achieved through internal synchronization of the output buffer enable and burst counter logic, so the device can accept a new address/control cycle on the same clock edge that completes the prior data transfer - verified in the synchronous truth table and timing diagrams.

What is the function of the ADV/LD and LBO pins on the 71V65803S100BG?

On the 71V65803S100BG, ADV/LD is a synchronous input that determines whether the current clock cycle loads a new external address (ADV/LD = LOW) or advances the internal burst counter (ADV/LD = HIGH). LBO is a static input selecting burst order: LOW enables linear sequence (0,1,2,3), HIGH enables interleaved (0,2,1,3). Both are essential for controlling burst behavior and are defined in the pin description summary and burst sequence tables.

Is the 71V65803S100BG pin-compatible with other members of the 71V65603/71V65803 family?

Yes, the 71V65803S100BG shares identical pinout, electrical characteristics, and functional behavior with the 71V65603S100BG in the 100-pin TQFP package. Differences are limited to memory organization (256K × 36 vs. 512K × 18) and internal address decoding - confirmed in the dual pin configuration diagrams (PKG100 for both variants) and functional descriptions. No PCB changes are required for migration within the same package variant.