Renesas 71V65803S100BG8

Overview

71V65803S100BG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround (ZBT) architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature (–40°C to +85°C) in a 100-pin TQFP package - deployed in high-speed network packet buffers and real-time DSP data caches.

For engineers reviewing the 71V65803S100BG8 datasheet, 71V65803S100BG8 pinout, 71V65803S100BG8 application, or 71V65803S100BG8 equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O supply (VDDQ) decoupling requirements, burst counter control via ADV/LD and LBO, and chip enable logic using CE1 (active low), CE2 (active low), and CE2 (active high).

Technical Context

The 71V65803S100BG8 implements a fully synchronous, clock-edge-triggered architecture where address, control, and data are registered on the rising edge of CLK. All operations - including load, burst advance, and deselect - are synchronized to CLK, with two-cycle latency between address/control assertion and data transfer.

ZBT functionality is realized through internally synchronized output buffer enable (eliminating external OE timing constraints) and dual-phase burst counter logic controlled by ADV/LD and LBO. The device supports individual byte write (BW1–BW4) and three-chip-enable depth expansion, enabling seamless integration into multi-SRAM memory subsystems without dead cycles between read/write transitions.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch. Pinout validated per IDT71V65803 PKG100 drawing (Rev. 6.42).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33128PFSIG, the 71V65803S100BG8 uniquely delivers zero-bus-turnaround operation and integrated burst counter logic - eliminating external glue logic and reducing system-level latency in tightly coupled processor/SRAM architectures.

Availability

71V65803S100BG8 is available at Aetrix Electronics and suitable for network packet buffering, DSP data caching, industrial PLC memory, avionics data logging, and telecom baseband processing requiring stable component supply and long-term industrial temperature support.

Supply support for 71V65803S100BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S100BG8 belongs to Renesas' legacy ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking and real-time embedded systems where bus efficiency and deterministic timing are critical.

FAQ

What is the memory organization and density of the 71V65803S100BG8?

The 71V65803S100BG8 is configured as 256K × 36-bit, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. It also supports 512K × 18-bit operation via pin strapping - verified in the functional block diagrams and pin configuration tables for PKG100. This dual-mode flexibility allows board-level reuse across varying data-path widths without changing the 71V65803S100BG8 footprint.

Does the 71V65803S100BG8 require external output enable (OE) control in ZBT mode?

No - the 71V65803S100BG8 features internally synchronized output buffer enable, eliminating the need for active OE timing control. OE is asynchronous and may be tied low for continuous read operation. This design removes setup/hold timing constraints on OE, simplifying interface timing and improving system robustness - a core ZBT™ feature confirmed in the Features and Description sections.

How does burst addressing work on the 71V65803S100BG8, and what controls the sequence order?

Burst addressing on the 71V65803S100BG8 is managed by the ADV/LD and LBO pins. ADV/LD = LOW loads a new external address; ADV/LD = HIGH advances the internal 2-bit burst counter. LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) order - both sequences defined in Tables 10 and 11. This logic is fully synchronous and validated in the Functional Timing Diagram and Burst Operation truth tables.

What are the power supply requirements for the 71V65803S100BG8, and how are VDD and VDDQ used?

The 71V65803S100BG8 requires two independent 3.3 V ±5% supplies: VDD powers the core logic (address/control registers, burst counter), while VDDQ powers the I/O circuitry (data bus drivers/receivers). Per Recommended DC Operating Conditions (Table 04), both rails must be within 3.135–3.465 V and decoupled separately - a requirement confirmed in Absolute Maximum Ratings and Pin Definitions.

Can the 71V65803S100BG8 operate in low-power mode, and how is it activated?

Yes - the 71V65803S100BG8 supports low-power sleep mode via the asynchronous ZZ input. When ZZ is driven HIGH, the internal clock is gated and ICC drops to standby level while data retention is guaranteed. This behavior is specified in Pin Definitions and Absolute Maximum Ratings, and applies across the full industrial temperature range (–40°C to +85°C).