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Renesas 71V65803S100BGG
- Part No.:
- 71V65803S100BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65803S100BGG.pdf
- Description:
- IC SRAM 9MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,127
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Product details
Overview
71V65803S100BGG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed, 3.8 ns clock-to-data access, zero bus turnaround architecture, and pipelined outputs. It operates across industrial temperature (–40°C to +85°C), supports 4-word burst (linear/interleaved), and features individual byte write control for high-bandwidth networking and packet buffering applications.
For engineers reviewing the 71V65803S100BGG datasheet, 71V65803S100BGG pinout, 71V65803S100BGG application, or 71V65803S100BGG equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter behavior under ADV/LD control, and industrial-grade thermal performance.
Technical Context
The 71V65803S100BGG implements a fully synchronous, positive-edge-triggered interface with registered address, data, and control inputs. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internal burst counter synchronization and pipelined output registers.
It uses three chip enables (CE1, CE2, CE2) with mixed polarity for flexible depth expansion, supports asynchronous OE and ZZ for output control and sleep mode, and relies on LBO to statically select linear or interleaved burst order-no dynamic reconfiguration during operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.4 Mbit); supports high-density data buffering without external width expansion |
| Max Clock Frequency | 150 MHz; enables 6.67 ns cycle time for real-time packet processing in telecom line cards |
| Clock-to-Data Access | 3.8 ns; guarantees deterministic read latency two cycles after address load for pipeline-synchronized systems |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails simplify power integrity design |
| Operating Temperature | –40°C to +85°C; qualified for industrial embedded systems including base station control planes |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus traffic by 75% per burst sequence |
| Byte Write Control | BW1–BW4 active-low enables; allows partial 9-bit writes without masking logic or extra glue logic |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm footprint, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference for all synchronous registers |
| A0–A17 | Address inputs | 18-bit address bus supporting 256K depth; latched on rising CLK edge with ADV/LD low |
| R/W | Read/Write control | Synchronous signal defining cycle type; determines data direction two cycles later |
| ADV/LD | Burst advance / address load | High = increment internal burst counter; low = load new external address into register |
| LBO | Burst order select | Static input: low = linear burst (0,1,2,3), high = interleaved (0,2,1,3) |
| BW1–BW4 | Byte write enables | Four independent active-low signals controlling 9-bit subwords (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4) |
| CE1, CE2, CE2 | Chip enables | Three enables with CE2 inverted; any false condition initiates two-cycle deselect and tri-state |
| OE | Output enable | Asynchronous; ties low for full read enable-no timing-critical OE management needed |
| ZZ | Sleep mode | Asynchronous; gates internal clock and reduces power to retention level while preserving data |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus with registered input/output paths; supports concurrent burst reads/writes |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between consecutive read/write operations-enables continuous 150 MHz bus utilization |
| Internally synchronized OE | Removes need for precise OE timing control; outputs remain stable even if OE is statically asserted |
| Single R/W pin | Reduces control bus complexity versus separate RD/WR signals-simplifies FPGA or ASIC interface logic |
| 4-word burst counter | Generates sequential addresses internally-cuts external address generation logic and routing congestion |
| Three chip enables | Supports seamless memory depth expansion across multiple devices without additional decode logic |
Applications
| High-Speed Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with minimal latency jitter. IC Role / Device Role / Timing Role: Primary data buffer SRAM interfacing directly to MAC or switch fabric controller via synchronous 36-bit bus. Use Value: ZBT™ architecture ensures no bus turnaround penalty during back-to-back packet writes/reads, sustaining >95% bus efficiency at 150 MHz. | Use Scenario: Frame buffering in OC-48/STM-16 SONET/SDH line interface units requiring deterministic access and industrial temp operation. IC Role / Device Role / Timing Role: Dual-port-equivalent buffer supporting simultaneous ingress/egress traffic streams using burst reads and writes. Use Value: 4-word burst mode reduces address setup overhead by 75%, enabling full line-rate processing of 2.488 Gbps payloads. |
| Baseband Processing Cache | Industrial PLC Data Logging |
Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE/5G baseband processors. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by DSP cores via tightly coupled synchronous interface. Use Value: 3.8 ns clock-to-data access and pipelined outputs align with DSP pipeline stages-no wait states required. | Use Scenario: Cyclic data acquisition and timestamped event logging in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Nonvolatile-backed buffer holding sensor history and alarm records before flash transfer. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation during extended power-loss intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133AXC | 133 MHz max frequency, 4.5 ns tCD, 512K × 18 organization, same TQFP-100 package | Lower bandwidth; suited for cost-sensitive designs where 150 MHz is not required | Select when system clock is ≤133 MHz and width expansion (×18 → ×36) is acceptable |
| AS7C3256A-15JC | 15 ns async access, no ZBT™ or burst counter, 32K × 8 organization, SOJ-32 package | Asynchronous interface; requires external control logic for burst and turnaround management | Choose only for legacy designs lacking synchronous clock infrastructure or burst requirements |
Compared with CY7C1362BV33-133AXC and AS7C3256A-15JC, the 71V65803S100BGG delivers higher throughput via ZBT™ and 4-word burst, supports wider 36-bit data paths natively, and maintains industrial temperature operation-making it optimal for next-generation telecom and industrial real-time buffers.
Availability
71V65803S100BGG is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, baseband processing cache, and industrial PLC data logging requiring stable component supply and long-term manufacturability.
Supply support for 71V65803S100BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V65803S100BGG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency buffering in synchronous digital systems where bus turnaround overhead must be eliminated.
FAQ
What is the memory configuration and total capacity of the 71V65803S100BGG?
The 71V65803S100BGG is configured as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This organization provides native 36-bit data width-ideal for systems aligned to 32-bit+ buses with parity or ECC overhead-eliminating the need for external width expansion or data multiplexing logic.
Does the 71V65803S100BGG support both linear and interleaved burst modes?
Yes, the 71V65803S100BGG supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO is low, the burst order is linear (e.g., A0, A1, A2, A3); when high, it is interleaved (e.g., A0, A2, A1, A3). This static selection enables optimization for sequential streaming or cache-line-aligned access patterns without runtime reconfiguration.
What is the role of the ZZ pin on the 71V65803S100BGG?
The ZZ pin on the 71V65803S100BGG is an asynchronous sleep mode input. When driven high, it internally gates the clock and places the device in its lowest-power state while guaranteeing data retention. This feature is critical for power-constrained industrial applications where periodic deep-sleep operation is required without data loss or external refresh circuitry.
How does the ZBT™ architecture of the 71V65803S100BGG improve system performance?
The ZBT™ (Zero Bus Turnaround) architecture of the 71V65803S100BGG eliminates dead cycles between consecutive read and write operations. By synchronizing internal burst counters and pipelining outputs, it enables immediate transition from write to read (or vice versa) without bus idle time-achieving sustained 150 MHz utilization in high-throughput packet buffering and telecom applications.
What package type and pin count does the 71V65803S100BGG use?
The 71V65803S100BGG uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) package, measuring 14 mm × 20 mm. This surface-mount package supports automated assembly, offers robust thermal performance for industrial environments, and is compatible with standard PCB layout practices for high-speed synchronous memory interfaces.
71V65803S100BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65803S100BGG FAQ
1.How can I place an order for 71V65803S100BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65803S100BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65803S100BGG reliable?
The price and inventory of 71V65803S100BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S100BGG is usually 5 days.
3.What payment methods are accepted for 71V65803S100BGG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65803S100BGG transactions.
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4.How is shipping managed for 71V65803S100BGG?
71V65803S100BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65803S100BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65803S100BGG?
For technical support, including 71V65803S100BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S100BGG requirements.
6.How does Aetrix verify that 71V65803S100BGG is sourced from the original manufacturer or authorized distributors?
All 71V65803S100BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S100BGG meets industry standards.
7.What is the process for return or replacement of 71V65803S100BGG?
All 71V65803S100BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S100BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65803S100BGG part is unused and in its original packaging.
Return procedure for 71V65803S100BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65803S100BGG Tags
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M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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