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Renesas 71V65803S100BGG8
- Part No.:
- 71V65803S100BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65803S100BGG8.pdf
- Description:
- IC SRAM 9MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,695
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Product details
Overview
71V65803S100BGG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs - deployed in high-speed packet buffering, network switch fabric control tables, and real-time DSP data caching.
For engineers reviewing the 71V65803S100BGG8 datasheet, 71V65803S100BGG8 pinout, 71V65803S100BGG8 application, or 71V65803S100BGG8 equivalent, key selection criteria include burst-mode timing compatibility, 3.3V I/O voltage tolerance, industrial temperature support (–40°C to +85°C), and TQFP-100 package mechanical fit for legacy board layouts.
Technical Context
The 71V65803S100BGG8 implements a fully synchronous, positive-edge-triggered interface with dual-cycle latency: address/control registration on one clock edge, data transfer two cycles later. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address sequencing.
It supports interleaved or linear 4-word bursts via static LBO pin configuration, individual byte write enables (BW1–BW4), three chip enables (CE1, CE2, CE2) for depth expansion, and asynchronous sleep mode (ZZ) and output enable (OE) - all while maintaining strict 3.3V ±5% core and I/O supply compliance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.44 Mbit); supports 512K × 18-bit via pin-compatible variant |
| Max Clock Frequency | 150 MHz; enables 6.67 ns cycle time for sustained high-throughput memory access |
| Clock-to-Data Access | 3.8 ns typical; defines minimum latency from CLK rise to valid Q output in read cycles |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus traffic and improves bandwidth efficiency |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; requires separate core and I/O rail regulation |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for extended thermal cycling in telecom infrastructure |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); compatible with automated SMT placement and reflow |
Pinout & Package
71V65803S100BGG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, with exposed pad not electrically connected. Pinout matches the 256K × 36 configuration per datasheet Figure 5 (PKG100).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs and outputs referenced to rising edge |
| R/W | Read/Write Control | Synchronous signal determining load-cycle direction; sampled with ADV/LD to initiate read or write |
| ADV/LD | Burst Address Advance / Load | Controls burst counter increment (HIGH) or external address load (LOW); critical for burst sequence management |
| BW1–BW4 | Byte Write Enables | Four independent active-low signals enabling 9-bit byte writes; allows partial-word updates without masking logic |
| CE1, CE2, CE2 | Chip Enables | Three synchronous enables (CE1/CE2 active low, CE2 active high); support multi-chip depth expansion with deselect arbitration |
| OE | Output Enable | Asynchronous control; tri-states outputs immediately when HIGH - eliminates need for precise timing coordination |
| ZZ | Sleep Mode Input | Asynchronous power-down; gates internal CLK and reduces ICC to standby level while retaining memory contents |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered input and output paths ensure clean setup/hold timing |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3 V core supply; VDDQ = 3.3 V I/O supply; separate rails minimize noise coupling between logic and I/O domains |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between consecutive reads and writes - increases effective bus utilization by up to 33% in mixed-access patterns |
| Pipelined Outputs | Internally synchronized output buffer enable removes OE timing constraints - simplifies system-level timing closure |
| 4-Word Burst Mode | Single address initiates four sequential data transfers; reduces address bus overhead and improves throughput in streaming applications |
| Individual Byte Write Control | BW1–BW4 allow selective 9-bit byte updates - avoids full-word read-modify-write sequences and reduces power per write |
| Three Chip Enables | CE1 (active low), CE2 (active low), CE2 (active high) enable flexible depth expansion without external decode logic |
Applications
| Network Packet Buffering | Switch Fabric Control Tables |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with sub-100 ns latency requirements. IC Role / Device Role / Timing Role: High-speed dual-port-like SRAM acting as temporary holding buffer with zero-turnaround burst reads/writes. Use Value: Enables line-rate forwarding at 10 Gbps+ by eliminating bus dead time between header lookup and payload write operations. | Use Scenario: Holding forwarding database entries (MAC/VLAN/IP tables) updated dynamically by control-plane processors. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 3.8 ns read access for parallel table lookups during packet classification. Use Value: Supports concurrent read-modify-write of multiple table entries using burst and byte-write features - reducing CPU intervention. |
| DSP Data Caching | Real-Time Industrial Controller Memory |
Use Scenario: Acting as low-latency scratchpad memory for TI C6000 or Analog Devices SHARC processors executing FFTs and FIR filters. IC Role / Device Role / Timing Role: External cache SRAM interfaced directly to processor EMIF with 150 MHz clock domain alignment. Use Value: Delivers sustained 600 MB/s bandwidth via 4-word burst mode - matching processor peak data consumption rates. | Use Scenario: Storing motion control trajectory buffers and PLC I/O image tables in servo drives operating across –40°C to +85°C ambient. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing deterministic access for hard real-time tasks with guaranteed data retention in sleep mode. Use Value: ZZ sleep mode reduces standby current to <5 µA while preserving contents - extending uptime in battery-backed systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133AXC | 133 MHz max speed; 256K × 36 organization; same TQFP-100 package; Cypress (Infineon) device with similar ZBT architecture | Lower max frequency (133 vs. 150 MHz); identical industrial temp range and burst capability | Select when 133 MHz meets system timing budget and Cypress supply chain preference applies |
| AS7C3256B-15JCIN | 15 ns access time (≈100 MHz); 256K × 36; 100-pin TQFP; Alliance Memory device with standard sync SRAM interface (no ZBT) | Lacks ZBT and burst counter; requires external OE control and suffers bus turnaround penalty | Choose only for cost-sensitive, non-burst, lower-bandwidth applications where ZBT advantage is unnecessary |
Compared with CY7C1362BV33-133AXC and AS7C3256B-15JCIN, the 71V65803S100BGG8 delivers higher bandwidth (150 MHz), true zero-turnaround operation, and integrated burst control - making it optimal for latency-critical networking and real-time control where every nanosecond and bus cycle counts.
Availability
71V65803S100BGG8 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric control tables, and real-time industrial controller memory requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.
Supply support for 71V65803S100BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V65803 belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for zero-latency bus turnaround and deterministic burst access in telecom switching, networking equipment, and real-time embedded systems.
FAQ
What is the maximum operating frequency of the 71V65803S100BGG8?
The 71V65803S100BGG8 supports a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period and 3.8 ns clock-to-data access time. This rating is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions, as specified in the Renesas datasheet revision Nov. 12, 21.
Does the 71V65803S100BGG8 support burst read and write operations?
Yes, the 71V65803S100BGG8 supports 4-word burst operations in both linear and interleaved sequences, controlled by the static LBO pin. Burst mode is initiated after loading an initial address with ADV/LD = LOW, then advancing the internal counter with ADV/LD = HIGH - enabling efficient streaming access without repeated address asserts.
What package type and pin count does the 71V65803S100BGG8 use?
The 71V65803S100BGG8 uses a 100-pin plastic thin quad flatpack (TQFP) package, JEDEC standard, 14 mm × 20 mm body size, 0.5 mm lead pitch. The "BGG" suffix explicitly denotes this TQFP-100 variant, confirmed in Renesas documentation and pin configuration diagrams for the 256K × 36 configuration.
How does the ZBTTM feature improve system performance in the 71V65803S100BGG8?
The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S100BGG8 eliminates idle cycles between consecutive read and write operations by overlapping bus direction control internally. This allows immediate transition from write to read (or vice versa) without waiting for bus stabilization - increasing effective memory bandwidth by up to 33% in mixed-access workloads like packet processing.
Can the 71V65803S100BGG8 operate in industrial temperature environments?
Yes, the 71V65803S100BGG8 is qualified for industrial temperature operation from –40°C to +85°C, as stated in the "Recommended Operating Temperature and Supply Voltage" table (Table 05) and "Absolute Maximum Ratings" (Table 06) of the Renesas datasheet. This makes it suitable for deployment in base stations, industrial PLCs, and outdoor networking hardware.
71V65803S100BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65803S100BGG8 FAQ
1.How can I place an order for 71V65803S100BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65803S100BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65803S100BGG8 reliable?
The price and inventory of 71V65803S100BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S100BGG8 is usually 5 days.
3.What payment methods are accepted for 71V65803S100BGG8?
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4.How is shipping managed for 71V65803S100BGG8?
71V65803S100BGG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65803S100BGG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65803S100BGG8?
For technical support, including 71V65803S100BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S100BGG8 requirements.
6.How does Aetrix verify that 71V65803S100BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V65803S100BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S100BGG8 meets industry standards.
7.What is the process for return or replacement of 71V65803S100BGG8?
All 71V65803S100BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S100BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65803S100BGG8 part is unused and in its original packaging.
Return procedure for 71V65803S100BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65803S100BGG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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