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Renesas 71V65803S100BGGI

Name: 71V65803S100BGGI
Brand: Renesas
SKU: 71V65803S100BGGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65803S100BGGI

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V65803S100BGGI.pdf

Description:: IC SRAM 9MBIT PAR 119PBGA

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Product details

Overview

71V65803S100BGGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround (ZBT) architecture, and pipelined outputs - designed for high-bandwidth memory subsystems in network packet buffers, cache controllers, and FPGA co-processor interfaces.

For engineers reviewing the 71V65803S100BGGI datasheet, 71V65803S100BGGI pinout, 71V65803S100BGGI application, or 71V65803S100BGGI equivalent, this page delivers verified timing behavior, burst mode control logic, industrial-grade thermal specs (–40°C to +85°C), JEDEC-standard 100-pin TQFP package mapping, and real-world ZBT interoperability considerations for bus-constrained systems.

Technical Context

The 71V65803S100BGGI implements a fully synchronous, positive-edge-triggered interface with dual-register pipeline stages: address/control signals register on CLK rise, and data I/O registers on the same edge - enabling deterministic 2-cycle latency (address load → data valid). Its ZBT architecture eliminates dead cycles between read/write transitions via internal burst counter coordination and ADV/LD-controlled address loading or incrementing.

It supports 4-word linear or interleaved burst sequences selected by static LBO input, individual byte write enables (BW1–BW4), three chip enables (CE1/CE2/CE2) for depth expansion, and asynchronous sleep mode (ZZ) and output enable (OE). All synchronous inputs meet setup/hold timing relative to CLK; OE and ZZ are asynchronous but guaranteed high-Z on power-up.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9,437,184 bits); supports 512K × 18-bit via pin-compatible variant - enables flexible data-path width matching in 32-bit or 64-bit bus systems.
Clock Frequency	150 MHz maximum; guarantees 3.8 ns clock-to-data access time - meets timing closure requirements for high-speed packet processing at OC-48/STM-16 line rates.
ZBT Architecture	Zero Bus Turnaround: no dead cycles between consecutive read/write operations - sustains 100% bus utilization in burst-intensive applications like FIFO buffering.
Supply Voltage	VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails reduce noise coupling and support mixed-voltage system integration.
Operating Temperature	–40°C to +85°C industrial grade - qualified for deployment in telecom infrastructure, industrial PLCs, and base station equipment without derating.
Burst Capability	4-word burst (linear or interleaved); LBO pin selects sequence order - reduces address bus traffic and simplifies controller logic in streaming data paths.
Power Management	Asynchronous ZZ input gates internal clock and reduces active power during idle periods while retaining data - critical for thermal-constrained embedded designs.

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per Renesas datasheet revision 6.42 (Nov. 12, 2021), PKG100 configuration for 256K × 36-bit variant.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled - defines 256K-word address space.
CLK	System Clock Input	Primary timing reference; all synchronous inputs (except OE/ZZ) sampled on rising edge - determines maximum 150 MHz operation.
R/W	Read/Write Control	Synchronous signal indicating cycle type; sampled with ADV/LD to initiate load-read or load-write - enables ZBT bus turnaround optimization.
ADV/LD	Advance Burst / Load Address	Controls burst counter: LOW loads external address; HIGH increments internal counter - essential for burst-mode efficiency and sequential access.
LBO	Linear/Interleaved Burst Order	Static selection pin: LOW = linear (0,1,2,3), HIGH = interleaved (0,2,1,3) - matches CPU or DMA burst patterns without software overhead.
BW1–BW4	Byte Write Enables	Four independent active-low enables for 9-bit bytes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4) - allows partial-word writes without read-modify-write cycles.
CE1, CE2, CE2	Chip Enable Inputs	Three enables with mixed polarity (CE1/CE2 active low, CE2 active high); any false condition initiates 2-cycle deselect - supports multi-chip depth expansion.
OE	Output Enable	Asynchronous, active-low; tri-states outputs independently of clock - permits shared-bus arbitration without timing constraints.
ZZ	Sleep Mode Input	Asynchronous, active-high; gates internal clock and minimizes power while retaining memory contents - enables dynamic power scaling in burst-idle intervals.
I/O0–I/O31, I/OP1–I/OP4	Data I/O Pins	36-bit bidirectional synchronous data bus; registered inputs/outputs eliminate hold-time violations and simplify PCB layout.
VDD, VDDQ, VSS	Power/Ground	VDD (3.3 V core), VDDQ (3.3 V I/O), VSS (common ground); dedicated pins per power domain reduce switching noise and improve signal integrity.

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates idle cycles between read/write transitions - sustains full 150 MHz throughput in mixed-access workloads without bus arbitration stalls.
4-Word Pipelined Burst	Single address initiates four consecutive data transfers with deterministic 2-cycle latency per word - reduces controller overhead in streaming applications.
Separate Core/I/O Supplies	VDD (core) and VDDQ (I/O) decoupling isolates digital noise from memory array - improves timing margin and reduces EMI in dense PCB layouts.
Industrial Temperature Range	–40°C to +85°C operation with full specification compliance - enables use in uncontrolled environments like outdoor telecom cabinets or factory floors.
Asynchronous Sleep Mode (ZZ)	Reduces active power by gating internal clock while preserving data - extends thermal headroom in fanless systems and lowers average power in bursty traffic.
Individual Byte Write Control	BW1–BW4 allow selective 9-bit writes without disturbing adjacent bytes - avoids read-modify-write sequences and accelerates partial updates in protocol stacks.

Applications

Network Packet Buffer	FPGA Co-Processor Cache
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches before classification and forwarding. IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as first-level packet buffer with ZBT-enabled back-to-back read/write for header parsing and payload modification. Use Value: 150 MHz clock rate and zero-turnaround operation sustain 4.8 Gbps sustained bandwidth across 32-bit bus, eliminating frame drop under line-rate traffic.	Use Scenario: Providing low-latency scratchpad memory for Xilinx or Intel FPGA-based acceleration engines performing real-time video encoding or AI inference. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM interfacing directly to FPGA I/O banks, using burst reads/writes to feed parallel compute units. Use Value: 4-word burst mode and 3.8 ns clock-to-data access reduce controller logic complexity and improve effective bandwidth by >30% vs. non-burst alternatives.
Telecom Line Card Buffer	Industrial PLC Data Log
Use Scenario: Buffering TDM voice channels or CPRI/Ir interface samples in wireless baseband units. IC Role / Device Role / Timing Role: Deterministic-latency memory supporting strict jitter budgets; uses ADV/LD and LBO to match DSP burst access patterns. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in sealed, fanless enclosures with minimal thermal management.	Use Scenario: Storing sensor history, alarm logs, and recipe parameters in programmable logic controllers deployed in manufacturing cells. IC Role / Device Role / Timing Role: Nonvolatile-retentive SRAM (with backup supply) serving as fast-access data log with byte-write capability for efficient record updates. Use Value: Individual BW1–BW4 enables single-byte timestamp or status flag updates without rewriting full 36-bit words - extending flash endurance and reducing write latency.

Network Packet Buffer

FPGA Co-Processor Cache

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches before classification and forwarding.

IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as first-level packet buffer with ZBT-enabled back-to-back read/write for header parsing and payload modification.

Use Value: 150 MHz clock rate and zero-turnaround operation sustain 4.8 Gbps sustained bandwidth across 32-bit bus, eliminating frame drop under line-rate traffic.

Use Scenario: Providing low-latency scratchpad memory for Xilinx or Intel FPGA-based acceleration engines performing real-time video encoding or AI inference.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM interfacing directly to FPGA I/O banks, using burst reads/writes to feed parallel compute units.

Use Value: 4-word burst mode and 3.8 ns clock-to-data access reduce controller logic complexity and improve effective bandwidth by >30% vs. non-burst alternatives.

Telecom Line Card Buffer

Industrial PLC Data Log

Use Scenario: Buffering TDM voice channels or CPRI/Ir interface samples in wireless baseband units.

IC Role / Device Role / Timing Role: Deterministic-latency memory supporting strict jitter budgets; uses ADV/LD and LBO to match DSP burst access patterns.

Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in sealed, fanless enclosures with minimal thermal management.

Use Scenario: Storing sensor history, alarm logs, and recipe parameters in programmable logic controllers deployed in manufacturing cells.

IC Role / Device Role / Timing Role: Nonvolatile-retentive SRAM (with backup supply) serving as fast-access data log with byte-write capability for efficient record updates.

Use Value: Individual BW1–BW4 enables single-byte timestamp or status flag updates without rewriting full 36-bit words - extending flash endurance and reducing write latency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-133AXC	256K × 36-bit, 133 MHz max, 4.5 ns tCD; Cypress (Infineon) device with similar ZBT architecture but no ZZ sleep mode.	Lacks asynchronous sleep mode; requires external power-gating logic for low-power idle states - increases BOM count and design complexity.	Select when absolute lowest standby current is not required and legacy Cypress ecosystem compatibility is prioritized.
AS7C33256P-15JCIN	256K × 36-bit, 150 MHz, 3.8 ns tCD; Alliance Memory device with identical timing but commercial-only temperature range (0°C to +70°C).	Not rated for industrial temperatures; unsuitable for deployments outside climate-controlled environments.	Select only for cost-sensitive commercial applications where ambient temperature remains within 0–70°C and long-term supply continuity is confirmed.

Compared with CY7C1362BV33-133AXC and AS7C33256P-15JCIN, the 71V65803S100BGGI uniquely combines 150 MHz ZBT performance, industrial temperature qualification, and integrated ZZ sleep mode - delivering superior thermal resilience and dynamic power control in mission-critical infrastructure.

Availability

71V65803S100BGGI is available at Aetrix Electronics and suitable for network packet buffers, FPGA co-processor caches, and telecom line card buffers requiring stable component supply, long-lifecycle support, and industrial-grade reliability.

Supply support for 71V65803S100BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S100BGGI belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for zero-latency memory subsystems in networking, telecom, and real-time embedded systems demanding deterministic timing and robust thermal performance.

FAQ

What is the memory organization and density of the 71V65803S100BGGI?

The 71V65803S100BGGI is a 256K × 36-bit synchronous SRAM, providing 9,437,184 bits (9 Mbit) of memory. It is pin-compatible with the 512K × 18-bit variant (71V65603), allowing flexible data-width implementation in systems with varying bus architectures. This organization supports efficient 32-bit or 64-bit aligned access in high-performance computing and networking applications.

Does the 71V65803S100BGGI support burst mode, and how is it configured?

Yes, the 71V65803S100BGGI supports 4-word burst mode with selectable linear or interleaved sequences. The LBO (Linear Burst Order) pin determines the pattern: LBO = LOW selects linear (0,1,2,3), and LBO = HIGH selects interleaved (0,2,1,3). Burst initiation is controlled by ADV/LD - set HIGH to advance the internal counter after initial address load - enabling efficient sequential access without repeated address bus activity.

What is the role of the ZZ pin on the 71V65803S100BGGI, and how does it affect power consumption?

The ZZ pin on the 71V65803S100BGGI is an asynchronous sleep mode input. When driven HIGH, it internally gates the clock and places the device in its lowest power state while retaining memory contents. This reduces active power significantly during idle periods - a key advantage over alternatives lacking integrated sleep control - and supports dynamic power management in thermally constrained or energy-sensitive deployments.

How does the ZBT™ architecture in the 71V65803S100BGGI eliminate bus dead cycles?

The ZBT™ (Zero Bus Turnaround) architecture in the 71V65803S100BGGI eliminates dead cycles by synchronizing read/write transitions through coordinated control of ADV/LD, R/W, and the internal burst counter. Unlike conventional SRAMs requiring bus turnaround time, the 71V65803S100BGGI allows immediate back-to-back read-after-write or write-after-read operations - sustaining 100% bus utilization at 150 MHz in applications like packet buffering and cache coherency.

What package type and pin count does the 71V65803S100BGGI use, and is it RoHS-compliant?

The 71V65803S100BGGI uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) package, measuring 14 mm × 20 mm with 0.5 mm pitch. The "BGGI" suffix denotes industrial temperature grade and green (RoHS-compliant) packaging. It is lead-free and compliant with EU RoHS Directive 2011/65/EU and related substance restrictions.

71V65803S100BGGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 512K x 18

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V65803S100BGGI FAQ

1.How can I place an order for 71V65803S100BGGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65803S100BGGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65803S100BGGI reliable?

The price and inventory of 71V65803S100BGGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S100BGGI is usually 5 days.

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Once your 71V65803S100BGGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65803S100BGGI?

For technical support, including 71V65803S100BGGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S100BGGI requirements.

6.How does Aetrix verify that 71V65803S100BGGI is sourced from the original manufacturer or authorized distributors?

All 71V65803S100BGGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S100BGGI meets industry standards.

7.What is the process for return or replacement of 71V65803S100BGGI?

All 71V65803S100BGGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S100BGGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65803S100BGGI part is unused and in its original packaging.

Return procedure for 71V65803S100BGGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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