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Renesas 71V65803S100BGGI8
- Part No.:
- 71V65803S100BGGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65803S100BGGI8.pdf
- Description:
- IC SRAM 9MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,026
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Product details
Overview
71V65803S100BGGI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 512K × 18-bit (9,437,184-bit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst read/write capability. It supports interleaved or linear 4-word bursts, individual byte write control (BW1–BW4), and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking packet buffers and telecom line card memory subsystems.
For engineers reviewing the 71V65803S100BGGI8 datasheet, 71V65803S100BGGI8 pinout, 71V65803S100BGGI8 application, or 71V65803S100BGGI8 equivalent, key selection criteria include ZBT™ burst timing compatibility, TQFP-100 package footprint, 3.3V I/O and core supply requirements, and support for ADV/LD-controlled burst counter sequencing in pipelined memory interfaces.
Technical Context
The 71V65803S100BGGI8 implements a fully synchronous, clock-edge-triggered architecture where address, control, and data registers are sampled on the rising edge of CLK. Its ZBT™ feature eliminates dead cycles between consecutive read/write operations by enabling immediate bus turnaround without OE control overhead.
Burst mode is managed via ADV/LD (load new address or increment internal counter) and LBO (linear/interleaved sequence selection). The device uses three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion and includes asynchronous ZZ sleep mode and OE for output tri-state control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 18-bit (9,437,184-bit total); supports depth expansion with three CE pins |
| Max Clock Frequency | 150 MHz; enables 6.67 ns cycle time for sustained pipelined throughput |
| Clock-to-Data Access | 3.8 ns typical; defines minimum latency from CLK edge to valid Q output |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling |
| Operating Temperature | –40°C to +85°C industrial grade; validated for embedded telecom and industrial control environments |
| Burst Capability | 4-word burst (interleaved or linear); reduces address bus traffic and improves bandwidth efficiency |
| Byte Write Control | BW1–BW4 enable independent 9-bit byte writes; avoids full-word overwrites in partial updates |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout matches PKG100 configuration for 512K × 18 variant per datasheet revision Nov.12.21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous inputs latched on rising CLK edge; A0–A17 used for 512K × 18 addressing (19-bit address space) |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 low-active, CE2 high-active) allow flexible depth expansion without external logic |
| R/W | Read/Write Control | Synchronous signal defining cycle type; determines whether data bus transfers read data or accepts write data two cycles later |
| ADV/LD | Burst Address Control | Loads external address when low; advances internal burst counter when high - enables seamless burst sequencing |
| LBO | Burst Order Select | Static input selecting linear (LBO = low) or interleaved (LBO = high) burst address sequence per JEDEC standard |
| BW1–BW4 | Byte Write Enables | Active-low synchronous controls for four 9-bit bytes; permits granular 8-bit or 16-bit updates within 36-bit word boundary |
| CLK | System Clock Input | Rising-edge-triggered master timing reference; all synchronous inputs referenced to this edge |
| ZZ | Asynchronous Sleep Mode | High-level assertion gates internal clock and reduces ICC to standby level while retaining memory contents |
| I/O0–I/O15, I/OP1–I/OP2 | Data I/O Pins | 18-bit bidirectional synchronous data path (16 data + 2 parity); registered input/output paths ensure timing predictability |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between read/write transitions, enabling back-to-back memory accesses at full clock rate |
| Pipelined Output Registers | Output data is registered on CLK edge, decoupling output timing from internal array access and improving system timing margin |
| 4-Word Burst Counter | Reduces address bus activity by 75% during sequential accesses; LBO pin selects JEDEC-compliant linear or interleaved order |
| Individual Byte Write (BW1–BW4) | Enables selective 9-bit writes without masking logic or full-word read-modify-write sequences |
| Three Chip Enables (CE1/CE2/CE2) | Supports up to 8× depth expansion using standard logic levels - no glue logic required for multi-chip memory banks |
Applications
| Packet Buffer Memory | Baseband Processing Cache |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet or SONET frame payloads in network switches and routers. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer supporting 150 MHz burst reads/writes with zero turnaround between packet header and payload transfers. Use Value: Sustained 2.7 GB/s effective bandwidth (150 MHz × 18 bits) minimizes packet loss under line-rate traffic. | Use Scenario: Temporary storage of FFT coefficients and channel estimation data in 4G/5G baseband processors. IC Role / Device Role / Timing Role: Pipelined SRAM interfacing directly with DSP cores requiring deterministic 3.8 ns read access and burst-aligned writes. Use Value: ADV/LD-controlled burst counter synchronizes with DSP DMA engine, eliminating address calculation overhead per word. |
| Industrial PLC Data Log | Medical Imaging Frame Store |
Use Scenario: Cyclic logging of sensor readings and actuator states in programmable logic controllers operating at –40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing nonvolatile-backed data retention during brownouts via ZZ sleep mode. Use Value: Asynchronous ZZ pin enables instant entry into ultra-low-power state (<100 µA ICC) while preserving memory contents. | Use Scenario: Intermediate frame buffering between image acquisition ASIC and compression engine in portable ultrasound systems. IC Role / Device Role / Timing Role: Low-jitter, registered I/O interface ensuring clean pixel data transfer at 150 MHz with minimal setup/hold violations. Use Value: Registered outputs reduce timing skew across 18-bit data bus, enabling reliable capture at maximum pixel clock rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133BAXI | 133 MHz max speed; 512K × 18 organization; same TQFP-100 package; Cypress (Infineon) device with similar ZBT™ burst behavior | Lower max frequency limits sustained bandwidth to 2.4 GB/s; identical industrial temp range and byte write support | Select when 133 MHz meets system timing budget and legacy Cypress design reuse is prioritized |
| AS7C35128PFSIG | 165 MHz max speed; 512K × 18 organization; 100-pin TQFP; Alliance Memory device with compatible pinout and timing model | Higher speed margin allows headroom for future clock scaling; identical voltage and temperature specs | Select when >150 MHz timing margin is required or dual-sourcing strategy mandates second-source qualification |
Compared with CY7C1362BV33-133BAXI and AS7C35128PFSIG, the 71V65803S100BGGI8 delivers optimal balance of 150 MHz performance, industrial temperature compliance, and mature ZBT™ implementation - making it ideal for cost-sensitive, volume-deployed telecom and industrial systems where proven reliability outweighs marginal speed gains.
Availability
71V65803S100BGGI8 is available at Aetrix Electronics and suitable for packet buffer memory, baseband processing cache, and industrial PLC data log applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature operation.
Supply support for 71V65803S100BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V65803S100BGGI8 belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for zero-latency memory subsystems in networking equipment, base stations, and real-time control systems demanding deterministic burst access and industrial-grade reliability.
FAQ
What is the memory organization and density of the 71V65803S100BGGI8?
The 71V65803S100BGGI8 is a 512K × 18-bit synchronous SRAM, providing 9,437,184 bits (9 Mbit) of total memory. This configuration supports depth expansion using its three chip enable pins (CE1, CE2, CE2) and is optimized for high-speed data buffering in telecom and industrial applications where 18-bit data paths align with common bus widths.
Does the 71V65803S100BGGI8 support burst mode, and how is it controlled?
Yes, the 71V65803S100BGGI8 supports 4-word burst mode with selectable linear or interleaved sequencing. Burst operation is controlled by the ADV/LD pin (to load address or advance counter) and the LBO pin (to select burst order). The burst counter is fully synchronous and increments on each rising CLK edge when ADV/LD is high, enabling predictable, low-overhead sequential access.
What package type and pin count does the 71V65803S100BGGI8 use?
The 71V65803S100BGGI8 uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) package, measuring 14 mm × 20 mm with 0.5 mm lead pitch. This PKG100 footprint is shared across the 71V65603/71V65803 family and supports drop-in compatibility with existing PCB layouts designed for this pinout and thermal profile.
How does the ZBT™ feature improve system performance in the 71V65803S100BGGI8?
The ZBT™ (Zero Bus Turnaround) feature in the 71V65803S100BGGI8 eliminates idle cycles between consecutive read and write operations. By removing the need for OE control and enabling immediate bus direction reversal, it sustains full 150 MHz throughput without dead cycles - critical for packet buffering and real-time data streaming where latency and bandwidth efficiency are paramount.
What are the power supply requirements for the 71V65803S100BGGI8?
The 71V65803S100BGGI8 requires two independent 3.3 V supplies: VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O circuitry. This separation minimizes noise coupling between logic and data paths. The device also supports asynchronous ZZ sleep mode, reducing current draw to <100 µA while retaining memory contents during idle periods.
71V65803S100BGGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65803S100BGGI8 FAQ
1.How can I place an order for 71V65803S100BGGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65803S100BGGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65803S100BGGI8 reliable?
The price and inventory of 71V65803S100BGGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S100BGGI8 is usually 5 days.
3.What payment methods are accepted for 71V65803S100BGGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65803S100BGGI8 transactions.
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4.How is shipping managed for 71V65803S100BGGI8?
71V65803S100BGGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65803S100BGGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65803S100BGGI8?
For technical support, including 71V65803S100BGGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S100BGGI8 requirements.
6.How does Aetrix verify that 71V65803S100BGGI8 is sourced from the original manufacturer or authorized distributors?
All 71V65803S100BGGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S100BGGI8 meets industry standards.
7.What is the process for return or replacement of 71V65803S100BGGI8?
All 71V65803S100BGGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S100BGGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65803S100BGGI8 part is unused and in its original packaging.
Return procedure for 71V65803S100BGGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65803S100BGGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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