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Renesas 71V65803S100BGI
- Part No.:
- 71V65803S100BGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65803S100BGI.pdf
- Description:
- IC SRAM 9MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,038
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Product details
Overview
71V65803S100BGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture. It supports pipelined burst reads/writes, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C) in JEDEC-standard 100-pin TQFP packaging - deployed in high-speed network packet buffers and telecom line-card memory subsystems.
For engineers reviewing the 71V65803S100BGI datasheet, 71V65803S100BGI pinout, 71V65803S100BGI application, or 71V65803S100BGI equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O compatibility, 100-pin TQFP footprint, burst counter behavior (linear/interleaved via LBO), and industrial-grade power-down support via ZZ input.
Technical Context
The 71V65803S100BGI implements a fully synchronous, positive-edge-triggered interface with registered address, control, and data paths. Its ZBT architecture eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal pipeline stages - enabling continuous 4-word burst transfers without external OE management.
It features an on-chip burst counter synchronized to ADV/LD, selectable linear or interleaved burst order via static LBO input, and three chip enables (CE1, CE2, CE2) supporting depth expansion. Power management includes asynchronous ZZ sleep mode and synchronous CEN suspension, both preserving data integrity during low-power states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.4 Mbit); supports 36-bit wide data path for high-throughput buffering |
| Clock Frequency | 150 MHz maximum; enables 6.67 ns cycle time for real-time packet processing |
| Access Time | 3.8 ns clock-to-data (tCD); guarantees deterministic output timing for synchronous system integration |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; dual-rail I/O/core separation reduces noise coupling |
| Operating Temperature | –40°C to +85°C industrial grade; qualified for base station and industrial control environments |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus overhead and improves bandwidth efficiency |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); compatible with standard SMT reflow profiles |
Pinout & Package
71V65803S100BGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch and exposed thermal pad (per PKG100 mechanical drawing). Pin functions are fully defined per Renesas IDT71V65803 datasheet revision Nov.12.21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Positive-edge-triggered master clock; all synchronous operations referenced to this edge |
| R/W | Read/Write Control | Synchronous signal defining load-cycle operation type; data transfer occurs two cycles later |
| ADV/LD | Burst Counter Control | Loads new external address (LOW) or increments internal burst counter (HIGH); defines burst initiation |
| LBO | Burst Order Select | Static input selecting linear (LOW) or interleaved (HIGH) 4-word burst sequence; no runtime switching |
| CE1, CE2, CE2 | Chip Enables | Three synchronous enables (CE1/CE2 active LOW, CE2 active HIGH); enable depth expansion and deselect control |
| BW1–BW4 | Byte Write Enables | Four independent active-LOW enables for 9-bit bytes; supports partial writes without masking logic |
| OE | Output Enable | Asynchronous, active-LOW; tri-states outputs immediately - not required for normal ZBT operation |
| ZZ | Sleep Mode Input | Asynchronous, active-HIGH; gates internal clock and reduces power to minimum retention level |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered inputs/outputs eliminate external latch requirements |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between consecutive reads/writes - enables back-to-back burst transfers at full clock rate |
| Pipelined Output Buffer | Internally synchronized OE replacement - removes need for external OE timing control in ZBT mode |
| 4-Word Burst Counter | Hardware-based counter with user-selectable linear/interleaved order - reduces address bus activity by 75% per burst |
| Individual Byte Write | Four dedicated BWx pins allow selective 9-bit writes - avoids read-modify-write sequences for partial updates |
| Three-Chip-Enable Architecture | Supports seamless depth expansion using CE1/CE2/CE2 logic - simplifies multi-SRAM bank design without glue logic |
| Industrial Temperature Range | –40°C to +85°C operation with full AC/DC specifications - validated for telecom infrastructure and industrial PLCs |
Applications
| High-Speed Network Packet Buffer | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with sub-10 ns latency requirements. IC Role / Device Role / Timing Role: Primary buffer SRAM interfacing directly to MAC controllers and switch fabric ASICs via synchronous 36-bit bus. Use Value: ZBT architecture enables uninterrupted 150 MHz burst transfers - eliminating bus arbitration delays and sustaining >5 Gbps aggregate throughput. |
Use Scenario: Holding voice channel samples and signaling data in TDM-over-IP gateways operating in harsh environmental conditions. IC Role / Device Role / Timing Role: Dual-port accessible memory block supporting simultaneous read (DSP fetch) and write (codec ingest) with deterministic 3.8 ns tCD. Use Value: Industrial temperature rating and ZZ sleep mode ensure reliable operation during thermal cycling and power-saving intervals in remote cabinets. |
| Baseband Processing Subsystem | Industrial Motion Controller Buffer |
|
Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE/5G small-cell baseband units. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory co-located with FPGA-based DSP engines using burst-aligned addressing. Use Value: 4-word burst capability with ADV/LD-controlled counter reduces FPGA address generation logic and improves utilization of 150 MHz clock domain. |
Use Scenario: Real-time buffering of encoder position data and servo command streams in CNC machine controllers. IC Role / Device Role / Timing Role: Deterministic-access memory for motion trajectory look-ahead tables, synchronized to servo loop timing engine. Use Value: Guaranteed 3.8 ns tCD and industrial-grade voltage tolerance (3.3 V ±5%) ensure jitter-free position update delivery under varying load conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-133AXC | 256K × 36-bit, 133 MHz max, 4.5 ns tCD; uses QDR-II+ interface with separate read/write clocks | Requires dual-clock routing and different burst protocol - not ZBT-compatible | Select only if migrating to QDR-II+ architecture; not drop-in for existing ZBT designs |
| AS7C33256P-15JCIN | 256K × 36-bit, 150 MHz, 4.0 ns tCD; standard sync SRAM without ZBT or burst counter | Lacks zero-turnaround and burst auto-increment - requires external address sequencing logic | Use where ZBT is unnecessary and cost sensitivity outweighs performance gain |
Compared with CY7C1371DV33-133AXC and AS7C33256P-15JCIN, the 71V65803S100BGI uniquely delivers ZBT timing and hardware burst control in a single 100-pin TQFP package - reducing PCB complexity and enabling higher sustained bandwidth without architectural redesign.
Availability
71V65803S100BGI is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card memory, baseband processing subsystems, and industrial motion controller buffers requiring stable component supply and long-term industrial qualification.
Supply support for 71V65803S100BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V65803S100BGI belongs to Renesas' legacy IDT synchronous SRAM product line, engineered specifically for zero-latency memory subsystems in carrier-grade networking and real-time control equipment.
FAQ
What is the memory configuration of the 71V65803S100BGI?
The 71V65803S100BGI is configured as 256K × 36-bit (9,437,184 bits total), providing a 36-bit-wide data bus optimized for high-throughput packet and frame buffering. This configuration is fixed for the S100BGI variant and does not support 512K × 18-bit reconfiguration - that option applies only to other members of the 71V65603/65803 family.
Does the 71V65803S100BGI support true ZBT™ operation without external OE control?
Yes, the 71V65803S100BGI implements internally synchronized output buffer enable logic, eliminating the need for active OE timing control in standard ZBT operation. OE may be tied LOW permanently; outputs are automatically managed via clock-synchronized pipeline registers - a core feature confirmed in the functional description and truth tables of the official datasheet.
What package type and pin count does the 71V65803S100BGI use?
The 71V65803S100BGI uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) package, 14 mm × 20 mm body size, with 0.5 mm lead pitch. This matches the PKG100 footprint shown in Figures 5 and 6 of the datasheet and is distinct from the 119-ball BGA or 165-fBGA variants offered in the same family.
How does burst addressing work on the 71V65803S100BGI?
Burst addressing on the 71V65803S100BGI is controlled by the ADV/LD and LBO pins: ADV/LD = HIGH advances the internal 4-word burst counter, while LBO = LOW selects linear order and LBO = HIGH selects interleaved order. The counter wraps automatically after four words, and the initial address is loaded when ADV/LD = LOW - all operations are synchronous to CLK.
Is the 71V65803S100BGI rated for industrial temperature operation?
Yes, the 71V65803S100BGI is specified for industrial temperature range (–40°C to +85°C) with full AC and DC electrical performance guaranteed across this range. This is explicitly stated in the "Recommended Operating Temperature and Supply Voltage" table and confirmed in the Absolute Maximum Ratings section of the datasheet.
71V65803S100BGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65803S100BGI FAQ
1.How can I place an order for 71V65803S100BGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65803S100BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65803S100BGI reliable?
The price and inventory of 71V65803S100BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S100BGI is usually 5 days.
3.What payment methods are accepted for 71V65803S100BGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65803S100BGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65803S100BGI?
71V65803S100BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65803S100BGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65803S100BGI?
For technical support, including 71V65803S100BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S100BGI requirements.
6.How does Aetrix verify that 71V65803S100BGI is sourced from the original manufacturer or authorized distributors?
All 71V65803S100BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S100BGI meets industry standards.
7.What is the process for return or replacement of 71V65803S100BGI?
All 71V65803S100BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S100BGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65803S100BGI part is unused and in its original packaging.
Return procedure for 71V65803S100BGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65803S100BGI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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