Renesas 71V65803S100BGI8

Overview

71V65803S100BGI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst reads/writes - deployed in high-speed networking line cards, packet buffer subsystems, and FPGA-based protocol accelerators requiring deterministic latency and no dead cycles between consecutive memory operations.

For engineers reviewing the 71V65803S100BGI8 datasheet, 71V65803S100BGI8 pinout, 71V65803S100BGI8 application, or 71V65803S100BGI8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), 3.3V I/O and core supply tolerance, and synchronous control signal registration on rising clock edge.

Technical Context

This device implements a fully synchronous, pipelined SRAM architecture where address/control signals are registered on the rising CLK edge, with data output valid two cycles later. It integrates an on-chip 4-word burst counter with linear/interleaved sequencing selectable via LBO, and supports individual byte write enable (BW1–BW4) for granular 9-bit writes.

Operation relies on three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, asynchronous OE for output tri-state control, and ZZ for low-power sleep mode. All synchronous inputs - including R/W, ADV/LD, CEN, and BWx - are sampled only on rising CLK edges when chip is selected and CEN is low.

Key Specifications

Pinout & Package

71V65803S100BGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch and exposed thermal pad (G suffix indicates green/lead-free). Pinout conforms to PKG100 configuration for the 256K × 36 variant as documented in Renesas datasheet revision 6.42.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and IS61WV25636BLL-150BLI, the 71V65803S100BGI8 delivers guaranteed zero bus turnaround, native 4-word interleaved burst support, and integrated ADV/LD-controlled counter - reducing system-level timing margining and eliminating external burst address generation logic.

Availability

71V65803S100BGI8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom line card memory applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade thermal performance.

Supply support for 71V65803S100BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65803S100BGI8 belongs to Renesas' high-speed ZBT™ SRAM product line, engineered specifically for deterministic, low-latency memory subsystems in packet-switched infrastructure and real-time control systems.

FAQ

What is the maximum operating frequency of the 71V65803S100BGI8?

The 71V65803S100BGI8 is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period and 3.8 ns typical clock-to-data access time. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply voltage, making it suitable for high-throughput applications such as network packet buffering and FPGA-accelerated computing where deterministic timing is critical.

Does the 71V65803S100BGI8 support both linear and interleaved burst modes?

Yes, the 71V65803S100BGI8 supports both linear and interleaved 4-word burst sequences, selected via the LBO (Linear Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). This flexibility allows optimization for sequential data streams or cache-line-aligned access patterns without software overhead - a feature confirmed in the functional timing diagrams and burst sequence tables of the official Renesas datasheet.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S100BGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S100BGI8 removes idle cycles between consecutive read and write operations by internally managing bus direction and timing. Unlike conventional SRAMs that require explicit bus turnaround delays, the 71V65803S100BGI8 transitions seamlessly from write to read (or vice versa) within the same clock domain - verified by the synchronous truth table and mixed-operation timing waveforms in the datasheet - enabling sustained peak bandwidth in burst-intensive applications like switch fabric controllers.

What are the power supply requirements for the 71V65803S100BGI8?

The 71V65803S100BGI8 requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O interface, also 3.3 V ±5%), with dedicated VSS ground connections. The datasheet specifies absolute maximum ratings of –0.5 V to +4.6 V on all terminals and recommends strict adherence to the 3.135–3.465 V window for reliable operation. No power sequencing is mandated, but VDD and VDDQ must reach nominal voltage before applying signals to avoid overstress.

Can the 71V65803S100BGI8 operate in low-power mode, and how is it controlled?

Yes, the 71V65803S100BGI8 supports low-power sleep mode via the asynchronous ZZ input: asserting ZZ HIGH gates the internal clock and reduces power consumption to its minimum retention level while preserving stored data. Data retention is guaranteed across the full industrial temperature range, and the device resumes normal operation synchronously upon ZZ deassertion - a capability validated in the Absolute Maximum Ratings and DC Operating Conditions sections of the Renesas datasheet.