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Renesas 71V65803S100BQ
- Part No.:
- 71V65803S100BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V65803S100BQ.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,457
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Product details
Overview
71V65803S100BQ from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150MHz clock speed, 3.8ns clock-to-data access, zero bus turnaround (ZBT) architecture, and pipelined outputs. It serves as a high-bandwidth data buffer in network packet processors and telecom line cards where rapid read/write alternation is required.
For engineers reviewing the 71V65803S100BQ datasheet, 71V65803S100BQ pinout, 71V65803S100BQ application, or 71V65803S100BQ equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), three chip enables for depth expansion, and JEDEC-standard 100-pin TQFP packaging with industrial temperature support (–40°C to +85°C).
Technical Context
The 71V65803S100BQ implements a fully synchronous, pipelined interface with address/control registration on the positive clock edge and two-cycle latency between address load and data transfer. Its ZBT™ architecture eliminates dead cycles during bus turnaround by overlapping write completion and read initiation within the same burst sequence.
It integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO inputs, supporting both linear and interleaved addressing sequences. Output enable (OE) is asynchronous, while all other inputs-including R/W, CEN, CE1/CE2/CE2, and BWx-are synchronous to CLK, enabling deterministic timing in high-speed pipeline designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.4 Mbit); supports 512K × 18-bit via pin-compatible variant |
| Max Clock Frequency | 150 MHz; enables 6.67 ns cycle time for sustained burst throughput |
| Clock-to-Data Access | 3.8 ns typical; defines minimum latency from CLK edge to valid output data |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails reduce noise coupling |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for base station and industrial control environments |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus traffic and improves bandwidth efficiency |
| Byte Write Control | Four independent BW1–BW4 signals; enables selective 9-bit byte writes without masking logic |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch. Pin 1 marked via corner notch; thermal pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Single-ended positive-edge-triggered master clock; all synchronous timing referenced to this signal |
| R/W | Read/Write Control | Synchronous command signal; determines operation type for current load cycle (two cycles before data transfer) |
| ADV/LD | Burst Address Control | Loads external address (LOW) or advances internal burst counter (HIGH); defines burst sequencing behavior |
| LBO | Burst Order Select | Static input selecting linear (LOW) or interleaved (HIGH) 4-word burst address sequence |
| BW1–BW4 | Byte Write Enables | Active-low synchronous enables for four 9-bit data bytes; allows partial-word writes without external logic |
| CE1, CE2, CE2 | Chip Enable Inputs | Three enables (CE1/CE2 active-low, CE2 active-high) for flexible depth expansion and hierarchical memory control |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered inputs/outputs eliminate external latch requirements |
| ZZ | Asynchronous Sleep Mode | Gates internal CLK and reduces power consumption while retaining data; no timing constraints on entry/exit |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates bus turnaround dead cycles between consecutive reads and writes, enabling continuous 150 MHz throughput |
| Pipelined Outputs | Internally synchronized output registers remove need for external OE timing control; OE can be tied low |
| 4-Word Burst Counter | Reduces address bus activity by 75% per burst; LBO pin selects linear or interleaved sequence for cache-line alignment |
| Individual Byte Write | Four dedicated BWx pins allow granular 9-bit writes-critical for protocol header updates without full-word overwrite |
| Three Chip Enables | Supports seamless depth expansion across multiple devices using CE1/CE2/CE2 logic combinations |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet frames in multi-gigabit switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed dual-port buffer managing simultaneous ingress/egress traffic streams using ZBT™ burst reads/writes. Use Value: 3.8 ns clock-to-data access and zero bus turnaround enable sub-10 ns effective read-modify-write cycles for frame header manipulation. | Use Scenario: Supporting real-time voice/data multiplexing in carrier-grade DSLAMs and optical line terminals. IC Role / Device Role / Timing Role: Synchronous SRAM acting as jitter buffer and ATM cell store with deterministic 150 MHz burst transfers. Use Value: Industrial temperature range (–40°C to +85°C) and 3.3V I/O compatibility ensure stable operation in uncontrolled telco cabinets. |
| Baseband Processor Cache | Industrial PLC Data Logging |
Use Scenario: Providing low-latency instruction/data cache for FPGA-based wireless baseband processors in 4G/LTE radio units. IC Role / Device Role / Timing Role: Pipelined SRAM interfacing directly to FPGA fabric with no external timing glue logic. Use Value: 100-pin TQFP package enables compact layout; 4-word burst mode matches common DSP word widths and reduces address routing congestion. | Use Scenario: Capturing high-speed sensor data streams in programmable logic controllers used in factory automation systems. IC Role / Device Role / Timing Role: Buffered memory storing timestamped analog/digital I/O snapshots during transient events. Use Value: Asynchronous ZZ sleep mode cuts standby power by >90% during idle periods while preserving data integrity across power cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V65603S100BQ | Same ZBT™ architecture and pinout, but configured as 512K × 18-bit (9.4 Mbit); different address/data mapping | Preferred where 18-bit data bus width aligns with legacy controller interfaces or cost-sensitive 16-bit systems | Select based on system bus width: 71V65803S100BQ for 36-bit parallel interfaces, 71V65603S100BQ for 18-bit. |
| CY7C1371BV33-100AXC | Cypress 256K × 36 ZBT SRAM; identical 100-pin TQFP, 100 MHz max speed, 4.5 ns access, no ZZ sleep mode | Suitable for commercial-temp applications where lower speed and absence of deep-sleep mode are acceptable | Choose 71V65803S100BQ for industrial temp, 150 MHz, and power-aware designs; CY7C1371BV33-100AXC for cost-optimized commercial use. |
Compared with 71V65603S100BQ and CY7C1371BV33-100AXC, the 71V65803S100BQ delivers higher clock frequency (150 vs. 100 MHz), faster access (3.8 vs. 4.5 ns), and industrial temperature support-making it optimal for next-generation telecom infrastructure requiring sustained bandwidth and thermal resilience.
Availability
71V65803S100BQ is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor cache, and industrial PLC data logging requiring stable component supply across extended product lifecycles.
Supply support for 71V65803S100BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V65803S100BQ belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed networking and telecom infrastructure applications.
FAQ
What is the memory organization and total capacity of the 71V65803S100BQ?
The 71V65803S100BQ is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration supports 36-bit parallel data paths and is functionally matched to the 512K × 18-bit variant 71V65603S100BQ via shared pinout and timing.
Does the 71V65803S100BQ support burst mode, and how is it configured?
Yes, the 71V65803S100BQ supports 4-word burst mode via its internal counter. Burst sequence order (linear or interleaved) is selected by the static LBO pin: LOW for linear, HIGH for interleaved. The ADV/LD pin controls whether an external address is loaded (LOW) or the counter is advanced (HIGH).
What is the role of the three chip enable pins (CE1, CE2, CE2) on the 71V65803S100BQ?
The 71V65803S100BQ uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. Chip selection requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously. This triple-enable scheme enables flexible depth expansion and hierarchical memory decoding without external logic.
How does the ZBTTM feature improve system performance in the 71V65803S100BQ?
The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S100BQ eliminates dead cycles between alternating read and write operations. By allowing immediate read initiation after write completion within the same burst sequence, it sustains 150 MHz throughput without bus idle time-critical for packet processing pipelines.
Is the 71V65803S100BQ compatible with industrial temperature requirements?
Yes, the 71V65803S100BQ is qualified for industrial temperature operation from –40°C to +85°C. This rating is explicitly specified in the datasheet and validated across all electrical parameters, making it suitable for deployment in base stations, industrial controllers, and outdoor telecom equipment.
71V65803S100BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V65803S100BQ FAQ
1.How can I place an order for 71V65803S100BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65803S100BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65803S100BQ reliable?
The price and inventory of 71V65803S100BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S100BQ is usually 5 days.
3.What payment methods are accepted for 71V65803S100BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65803S100BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65803S100BQ?
71V65803S100BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65803S100BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65803S100BQ?
For technical support, including 71V65803S100BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S100BQ requirements.
6.How does Aetrix verify that 71V65803S100BQ is sourced from the original manufacturer or authorized distributors?
All 71V65803S100BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S100BQ meets industry standards.
7.What is the process for return or replacement of 71V65803S100BQ?
All 71V65803S100BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S100BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65803S100BQ part is unused and in its original packaging.
Return procedure for 71V65803S100BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65803S100BQ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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