Renesas 71V65803S100BQG

Overview

71V65803S100BQG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst modes, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-speed networking buffers, packet switching ASIC/FPGA interfaces, and real-time DSP memory subsystems.

For engineers reviewing the 71V65803S100BQG datasheet, 71V65803S100BQG pinout, 71V65803S100BQG application, or 71V65803S100BQG equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, and support for pipelined read/write transitions without dead cycles.

Technical Context

The 71V65803S100BQG implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising CLK edge. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions via internal burst counter management and ADV/LD-controlled address loading or incrementing.

It features three chip enables (CE1, CE2 active-low; CE2 active-high), asynchronous OE and ZZ inputs, static LBO for burst order selection, and internally synchronized output buffer enable-removing external OE timing constraints. All I/Os are registered, supporting pipelined system integration with deterministic 2-cycle data latency.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated for 256K × 36 configuration per PKG100 drawing (Rev. 6.42).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-133AXC and AS7C33128PFSI-15BIN, the 71V65803S100BQG uniquely combines 150 MHz performance, ZBTTM architecture, ZZ sleep mode, and full 4-byte write control - making it optimal for thermally constrained, high-throughput telecom and networking buffers requiring deterministic low-latency behavior.

Availability

71V65803S100BQG is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and DSP algorithm memory applications requiring stable component supply, long-term industrial temperature support, and ZBT™-optimized timing behavior.

Supply support for 71V65803S100BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S100BQG belongs to Renesas' high-speed ZBT™ SRAM product line, engineered specifically for zero-latency memory interfacing in packet-switched networks, baseband processing, and real-time embedded systems demanding deterministic burst performance.

FAQ

What is the maximum operating frequency of the 71V65803S100BQG?

The 71V65803S100BQG is rated for 150 MHz operation, corresponding to a 6.67 ns clock period and 3.8 ns clock-to-data access time. This frequency is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions, as verified in the AC timing specifications of the official Renesas datasheet (Rev. 6.42).

Does the 71V65803S100BQG support both linear and interleaved burst modes?

Yes, the 71V65803S100BQG supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven low, the burst follows linear order (A0, A1, A2, A3); when high, it follows interleaved order (A0, A2, A1, A3). This selection is static and must remain stable during burst operation.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S100BQG?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S100BQG allows immediate transition from a write burst to a read burst (or vice versa) without inserting idle cycles. This is achieved through internal burst counter synchronization and ADV/LD-controlled address sequencing - ensuring the bus remains active and productive at 150 MHz sustained throughput.

What package type is used for the 71V65803S100BQG?

The 71V65803S100BQG uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), designated PKG100, with 14 mm × 20 mm body size and 0.5 mm lead pitch. This package is explicitly confirmed in the Renesas datasheet (Rev. 6.42) for the 256K × 36 configuration and supports industrial temperature operation.

Can the 71V65803S100BQG operate in power-down mode, and how is it controlled?

Yes, the 71V65803S100BQG supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven high, the internal clock is gated and core current drops to under 100 µA while retaining memory contents. The device resumes normal operation within one clock cycle after ZZ returns low, with no initialization delay required.