Renesas 71V65803S100BQG8

Overview

71V65803S100BQG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed, 3.8 ns clock-to-data access, zero bus turnaround (ZBT) architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature range (–40°C to +85°C), targeting high-speed cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V65803S100BQG8 datasheet, 71V65803S100BQG8 pinout, 71V65803S100BQG8 application, or 71V65803S100BQG8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter control via ADV/LD and LBO, and support for individual byte write (BW1–BW4) and three-chip-enable depth expansion.

Technical Context

The 71V65803S100BQG8 implements a fully synchronous, pipelined SRAM architecture where address/control registration occurs on the rising CLK edge, with data output valid two cycles later. Its ZBT feature eliminates dead cycles between read/write transitions by internally synchronizing OE and enabling immediate bus turnaround without external control.

It integrates a 4-word burst counter with static LBO input selecting linear or interleaved addressing, ADV/LD toggling between external address load (ADV/LD = LOW) and internal counter advance (ADV/LD = HIGH), and asynchronous ZZ sleep mode for low-power retention. All synchronous inputs-including R/W, CEN, CE1/CE2/CE2, and BWx-are sampled on CLK rising edge with setup/hold timing referenced to that edge.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with exposed pad not present. Pin pitch is 0.5 mm. Compatible with standard reflow soldering profiles for industrial PCB assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-133AXC and AS7C3256A-15JCN, the 71V65803S100BQG8 delivers deterministic 3.8 ns latency and zero bus turnaround in a single-clock, single-port architecture-reducing controller complexity while meeting strict timing budgets in telecom and industrial real-time systems.

Availability

71V65803S100BQG8 is available at Aetrix Electronics and suitable for high-speed network buffers, telecom line card caches, and industrial PLC data loggers requiring stable component supply, long-term industrial temperature support, and JEDEC-standard TQFP packaging.

Supply support for 71V65803S100BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803 belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking equipment, base stations, and real-time embedded systems demanding deterministic timing and zero bus turnaround.

FAQ

What is the maximum operating frequency of the 71V65803S100BQG8?

The 71V65803S100BQG8 is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device achieves 3.8 ns clock-to-data access time at this speed, making it suitable for demanding high-speed buffering applications such as packet switching and radar signal processing where timing predictability is critical. The 71V65803S100BQG8 maintains this performance without derating under specified operating conditions.

Does the 71V65803S100BQG8 support burst read and write operations?

Yes, the 71V65803S100BQG8 supports 4-word burst operations for both reads and writes. Burst sequencing is controlled by the ADV/LD and LBO pins: ADV/LD = HIGH advances the internal burst counter, while LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) address order. Each burst cycle delivers four consecutive data words starting from the loaded base address, reducing address bus traffic and improving throughput in sequential access scenarios. The 71V65803S100BQG8 executes bursts synchronously with the CLK rising edge and maintains full ZBT functionality throughout burst sequences.

What is the function of the ZZ pin on the 71V65803S100BQG8?

The ZZ pin on the 71V65803S100BQG8 is an asynchronous sleep mode input. When driven HIGH, ZZ gates the internal clock and places the device into a low-power retention state while preserving stored data. In this mode, core and I/O power consumption drops significantly-enabling energy-efficient operation in intermittently active systems like remote sensors or standby telecom modules. The 71V65803S100BQG8 exits sleep mode synchronously on the next valid CLK rising edge after ZZ returns LOW, with no reset or initialization sequence required.

How does the ZBTTM feature improve system performance in the 71V65803S100BQG8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S100BQG8 eliminates dead cycles when switching between read and write operations on the same bus. Unlike conventional SRAMs requiring explicit bus turnaround time, the 71V65803S100BQG8 allows immediate back-to-back read-after-write or write-after-read transfers. This is achieved through internally synchronized output enable and pipelined control logic. As a result, the 71V65803S100BQG8 increases effective memory bandwidth by up to 25% in mixed-access workloads typical of network packet processing and real-time control loops.

What package type is used for the 71V65803S100BQG8?

The 71V65803S100BQG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) with 0.5 mm pitch and 14 mm × 20 mm body dimensions. This RoHS-compliant, green-part-qualified package supports standard surface-mount assembly and reflow processes. The pinout is optimized for signal integrity, with dedicated VDDQ/VSS pairs adjacent to I/O banks and distributed power/ground pins to minimize noise coupling. The 71V65803S100BQG8's TQFP-100 footprint ensures drop-in compatibility with other members of the IDT71V65603/65803 family.