Renesas 71V65803S100BQI

Overview

71V65803S100BQI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst outputs. It supports interleaved/linear 4-word bursts, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-speed packet buffering, network switch fabric, and real-time DSP memory subsystems.

For engineers reviewing the 71V65803S100BQI datasheet, 71V65803S100BQI pinout, 71V65803S100BQI application, or 71V65803S100BQI equivalent, key selection criteria include ZBT™ timing compatibility, TQFP-100 package footprint, 3.3V I/O and core supply requirements, and support for burst read/write without dead cycles between bus direction changes.

Technical Context

The 71V65803S100BQI implements a fully synchronous, clock-edge-triggered interface with address/control/data registers aligned to the rising edge of CLK. Its ZBT™ architecture eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions using internal burst counter logic and ADV/LD-controlled address loading.

It features three chip enables (CE1, CE2, CE2) with dual-polarity logic, asynchronous OE and ZZ inputs, and static LBO pin selection for linear or interleaved burst order. Output enable is internally synchronized, removing external timing constraints on OE control.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per Renesas document 5304 drw 02 (PKG100, 256K×36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V65603S100BQI and AS7C3256B-10JIN, the 71V65803S100BQI uniquely delivers industrial-temperature ZBT™ operation with 36-bit width and integrated burst control - enabling single-chip solutions for high-reliability, high-throughput memory subsystems without external timing glue.

Availability

71V65803S100BQI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial motion controller FIFO applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 71V65803S100BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S100BQI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency memory subsystems in networking, telecommunications, and real-time embedded systems demanding deterministic bus turnaround and burst efficiency.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V65803S100BQI?

The 71V65803S100BQI operates up to 150 MHz with a guaranteed clock-to-data access time of 3.8 ns. This specification is measured under industrial conditions (–40°C to +85°C) with VDD and VDDQ at 3.3 V ±5%. The timing ensures deterministic output validity two clock cycles after address/control registration, critical for pipelined system architectures.

Does the 71V65803S100BQI support both linear and interleaved burst modes, and how is the selection made?

Yes, the 71V65803S100BQI supports both linear and interleaved 4-word burst sequences. Selection is controlled by the static LBO (Linear Burst Order) pin: LBO = LOW configures linear order (0,1,2,3), while LBO = HIGH selects interleaved order (0,2,1,3). The pin must remain stable during burst operation and is not sampled dynamically.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S100BQI?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S100BQI uses an internal burst counter and ADV/LD-controlled address sequencing to allow immediate transition between read and write operations. Unlike conventional SRAMs requiring bus idle cycles for direction change, the 71V65803S100BQI sustains continuous 150 MHz throughput without insertion of wait states or dead cycles.

What are the voltage and sequencing requirements for VDD and VDDQ on the 71V65803S100BQI?

The 71V65803S100BQI requires VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O drivers. Power sequencing is not required: either rail may ramp first, but no input or I/O pin voltage may exceed VDDQ during ramp-up. Both supplies must reach nominal value before applying CLK.

Can the 71V65803S100BQI be used in depth-expanded memory configurations, and what pins enable this?

Yes, the 71V65803S100BQI supports depth expansion using its three chip enables: CE1 (active LOW), CE2 (active LOW), and CE2 (active HIGH). These allow hierarchical decoding across multiple devices - for example, using CE1/CE2 to select bank and CE2 to enable individual units - enabling seamless memory capacity scaling without external logic.