Renesas 71V65803S100PFG

Overview

71V65803S100PFG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz operation, 3.8 ns clock-to-data access, zero bus turnaround (ZBT), and pipelined burst reads/writes - deployed in high-speed networking line cards and packet buffering subsystems.

For engineers reviewing the 71V65803S100PFG datasheet, 71V65803S100PFG pinout, 71V65803S100PFG application, or 71V65803S100PFG equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O interface alignment, industrial temperature support (–40°C to +85°C), and burst-mode control via ADV/LD and LBO.

Technical Context

The 71V65803S100PFG implements a fully synchronous, positive-edge-triggered architecture with registered address, control, and data paths. Its ZBT feature eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal memory access, enabled by dual-phase burst counter logic and internally synchronized OE.

It supports interleaved or linear 4-word bursts controlled by static LBO input, uses three chip enables (CE1/CE2/CE2) for depth expansion, and integrates individual byte write (BW1–BW4) control with pipelined output registers - all operating under a single 3.3V core (VDD) and I/O (VDDQ) supply.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch and exposed thermal pad (not electrically connected). Pin 1 marked by corner notch; top-side marking includes "71V65803S100PFG" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256A-15JC, the 71V65803S100PFG uniquely delivers ZBT timing, 150 MHz synchronous operation, and industrial-temperature TQFP packaging - making it irreplaceable in high-performance packet buffering where bus turnaround latency must be eliminated.

Availability

71V65803S100PFG is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfaces, telecom line card memory, and industrial real-time controller buffer applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V65803S100PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V65803S100PFG belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet-switching and real-time control systems demanding deterministic synchronous memory access.

FAQ

What is the maximum operating frequency of the 71V65803S100PFG?

The 71V65803S100PFG is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions, enabling sustained high-throughput operation in packet buffering and network processing applications where timing margin is critical.

Does the 71V65803S100PFG support both 256K × 36 and 512K × 18 configurations?

Yes, the 71V65803S100PFG supports both memory organizations. The 256K × 36-bit mode uses all 36 I/O pins (I/O0–I/O31 and I/OP1–I/OP4), while the 512K × 18-bit mode repurposes I/O16–I/O31 and I/OP3–I/OP4 as additional address bits (A18–A19), reducing data width to 18 bits. Configuration is determined by pin strapping and address decoding - no internal register setting is required.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S100PFG?

The ZBTTM feature in the 71V65803S100PFG eliminates dead cycles by overlapping bus direction change with internal memory access. When transitioning between read and write operations, the device uses internal pipeline registers and burst counter logic to initiate the next access before the previous bus cycle completes - resulting in zero idle clock cycles between successive transactions, unlike conventional synchronous SRAMs that require explicit turnaround delays.

What is the function of the ADV/LD and LBO pins on the 71V65803S100PFG?

On the 71V65803S100PFG, ADV/LD is a synchronous control pin that loads a new external address when LOW (at rising CLK edge) or advances the internal 4-word burst counter when HIGH. LBO is a static input that selects burst order: LOW enables linear addressing (0,1,2,3), HIGH enables interleaved (0,2,1,3). Both are essential for implementing efficient burst-mode memory access without external address generation logic.

Can the 71V65803S100PFG operate in deep power-down mode, and how is it controlled?

Yes, the 71V65803S100PFG supports deep power-down mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated, dynamic power drops to minimum, and the device retains stored data. Power consumption falls significantly while maintaining full data integrity - ideal for energy-constrained telecom and industrial systems requiring rapid wake-up without data reload.