Renesas 71V65803S100PFG8

Overview

71V65803S100PFG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed, 3.8 ns clock-to-data access, zero bus turnaround (ZBT) architecture, and pipelined outputs. It serves as high-bandwidth on-chip or system-level cache in network packet buffers, telecom line cards, and FPGA co-processor memory interfaces.

For engineers reviewing the 71V65803S100PFG8 datasheet, 71V65803S100PFG8 pinout, 71V65803S100PFG8 application, or 71V65803S100PFG8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), three chip enables for depth expansion, asynchronous ZZ sleep mode, and JEDEC-standard 100-pin TQFP packaging with industrial temperature range (–40°C to +85°C).

Technical Context

The 71V65803S100PFG8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ feature eliminates dead cycles between read and write operations by enabling immediate bus turnaround via internal synchronization of output enable.

It integrates a 4-word burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved sequences. All synchronous operations-including load, burst, deselect, and suspend-are timed relative to the rising edge of CLK, with CEN enabling clock gating and OE providing asynchronous output control.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant (PFG8 suffix). Pin pitch: 0.5 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33128PFS-15BIN, the 71V65803S100PFG8 uniquely delivers ZBT™-enabled bus efficiency and programmable 4-word burst sequencing-critical for maximizing throughput in packet-processing and telecom buffering where address bus bandwidth is constrained.

Availability

71V65803S100PFG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, FPGA co-processor cache, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V65803S100PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S100PFG8 belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for low-latency, high-bandwidth memory subsystems in networking, telecom, and real-time embedded systems demanding deterministic timing and zero bus turnaround.

FAQ

What is the memory organization and capacity of the 71V65803S100PFG8?

The 71V65803S100PFG8 is configured as 256K × 36 bits, delivering 9,437,184 total bits (9.4 Mbit) of synchronous SRAM. This organization supports 36-bit wide data transfers and is pin-compatible with the 512K × 18 variant (71V65603) on the same 100-pin TQFP package, allowing layout reuse across density options. The device uses a high-performance CMOS process optimized for low-latency access.

Does the 71V65803S100PFG8 support burst mode, and how is it configured?

Yes, the 71V65803S100PFG8 supports 4-word burst mode via its integrated burst counter. Burst behavior is controlled by the ADV/LD and LBO pins: ADV/LD high advances the counter, while LBO selects linear (LBO = low) or interleaved (LBO = high) addressing. The burst sequence is fully synchronous and requires no external logic-address incrementing occurs internally on each rising CLK edge during burst cycles.

What is the role of the ZZ pin on the 71V65803S100PFG8, and how does it affect power consumption?

The ZZ pin on the 71V65803S100PFG8 is an asynchronous sleep mode input. When driven high, ZZ gates the internal clock and places the device in its lowest-power state while maintaining full data retention. This feature reduces active power significantly during idle periods-critical for thermally constrained telecom and industrial applications-and resumes normal operation within one clock cycle upon ZZ deassertion.

How does the ZBTTM feature improve system performance in the 71V65803S100PFG8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S100PFG8 eliminates dead cycles between consecutive read and write operations by synchronizing output enable internally. Unlike conventional SRAMs requiring OE assertion/deassertion and bus turnaround delays, the 71V65803S100PFG8 allows immediate transition from write to read (or vice versa) on the next clock edge-increasing effective bus utilization by up to 30% in burst-heavy workloads like packet buffering.

What package and compliance specifications apply to the 71V65803S100PFG8?

The 71V65803S100PFG8 is supplied in a 100-pin plastic thin quad flatpack (TQFP) per JEDEC MO-145, with 0.5 mm pitch and 14 mm × 20 mm body size. The "PFG8" suffix denotes lead-free, RoHS-compliant construction. It meets industrial temperature requirements (–40°C to +85°C), supports green manufacturing, and is qualified for long-term reliability in mission-critical infrastructure applications.