Renesas 71V65803S100PFGI8

Overview

71V65803S100PFGI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs - deployed in high-speed networking buffers, packet switching ASIC interfaces, and real-time DSP memory subsystems.

For engineers reviewing the 71V65803S100PFGI8 datasheet, 71V65803S100PFGI8 pinout, 71V65803S100PFGI8 application, or 71V65803S100PFGI8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), industrial temperature range (–40°C to +85°C), TQFP-100 packaging, and ZBT™-enabled read-after-write cycle elimination.

Technical Context

The 71V65803S100PFGI8 implements a fully synchronous, rising-edge-triggered interface with address/control/data registers clocked on CLK. Its ZBT™ architecture eliminates dead cycles between consecutive reads and writes by overlapping bus turnaround via internal burst counter and ADV/LD-controlled address loading or incrementing.

It supports 4-word burst sequences (linear or interleaved per LBO pin), pipelined output registers for deterministic timing, and asynchronous OE/ZZ controls for output disable and sleep mode - all while maintaining strict 3.3V ±5% core (VDD) and I/O (VDDQ) supply compliance across commercial and industrial grades.

Key Specifications

Pinout & Package

71V65803S100PFGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with exposed pad not present and lead finish matte tin.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1354BV18 and AS7C33128PFSIG, the 71V65803S100PFGI8 uniquely delivers 256K × 36 organization with ZBT™-enabled read-after-write continuity in a TQFP-100 package - making it optimal for high-bandwidth, low-latency 36-bit data path systems where burst efficiency and industrial temperature operation are mandatory.

Availability

71V65803S100PFGI8 is available at Aetrix Electronics and suitable for high-speed packet buffering, ASIC/FPGA interface memory, DSP algorithm acceleration, and industrial real-time control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V65803S100PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S100PFGI8 belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for zero-latency memory subsystems in networking equipment, baseband processors, and real-time embedded systems demanding deterministic timing and industrial reliability.

FAQ

What is the memory configuration and total capacity of the 71V65803S100PFGI8?

The 71V65803S100PFGI8 is configured as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9 Megabits). This organization supports 36-bit data paths common in high-end networking and DSP applications, and is distinct from the 512K × 18 variant in the same family. The device maintains full pin compatibility within its TQFP-100 footprint across speed grades and temperature ranges.

Does the 71V65803S100PFGI8 support burst mode, and how is burst order controlled?

Yes, the 71V65803S100PFGI8 supports 4-word burst mode with selectable linear or interleaved sequence. Burst order is controlled by the static LBO (Linear Burst Order) pin: LBO = LOW selects linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved (A0, A1, A2+1, A3+1). The burst counter advances automatically on each CLK edge when ADV/LD = HIGH, eliminating external address generation overhead.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S100PFGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S100PFGI8 eliminates dead cycles by allowing immediate transition from write to read (or read to write) without bus idle time. It achieves this through internal synchronization of address/control registration and pipelined output enable - so the next access begins on the subsequent clock edge. This is confirmed in the functional description stating "designed to eliminate dead bus cycles when turning the bus around between reads and writes."

What are the power supply requirements and voltage tolerances for the 71V65803S100PFGI8?

The 71V65803S100PFGI8 requires two independent 3.3V supplies: VDD (core logic) and VDDQ (I/O drivers), both specified at 3.3V ±5% (3.135 V to 3.465 V). VSS is the common ground reference. These tolerances are explicitly defined in the Recommended DC Operating Conditions table, and absolute maximum ratings cap terminal voltage at VDD +0.5 V for I/O pins - ensuring robustness against transient overvoltage.

Is the 71V65803S100PFGI8 compatible with industrial temperature operation, and what is its rated range?

Yes, the 71V65803S100PFGI8 is qualified for industrial temperature operation with a rated ambient range of –40°C to +85°C. This is explicitly stated in the Absolute Maximum Ratings and Recommended Operating Conditions tables, and applies to the "I" suffix variant (as indicated in the part number PFGI8). The device uses a high-performance CMOS process and undergoes extended temperature screening to ensure reliability under sustained thermal stress.