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Renesas 71V65803S133BG
- Part No.:
- 71V65803S133BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65803S133BG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,709
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Product details
Overview
71V65803S133BG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock frequency (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs - designed for high-bandwidth memory buffering in network packet processors and telecom line cards.
For engineers reviewing the 71V65803S133BG datasheet, 71V65803S133BG pinout, 71V65803S133BG application, or 71V65803S133BG equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O voltage tolerance, industrial temperature support (–40°C to +85°C), and TQFP-100 package compatibility with legacy board layouts.
Technical Context
The 71V65803S133BG implements a fully synchronous, positive-edge-triggered interface with registered address, control, and data paths. Its ZBT™ architecture eliminates dead cycles between read/write transitions by enabling immediate bus direction reversal after each access.
It features an on-chip 4-word burst counter (linear or interleaved via LBO pin), individual byte write enables (BW1–BW4), three chip enables (CE1/CE2/CE2) for depth expansion, and asynchronous sleep mode (ZZ) for power reduction. All synchronous inputs are sampled on the rising CLK edge, with OE remaining asynchronous for output control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9,437,184 bits); supports 512K × 18-bit via pin-compatible variant |
| Clock Frequency | 133 MHz (7.5 ns cycle time); guarantees full-speed operation under industrial temperature (–40°C to +85°C) |
| Access Timing | 3.8 ns clock-to-data (tCD) for reads; enables tight pipeline coupling in high-throughput systems |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate rails allow independent noise management |
| Burst Capability | 4-word burst (interleaved or linear); reduces address bus traffic and improves effective bandwidth by 4× per load |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for sustained operation in base station and industrial control environments |
| Power Management | Asynchronous ZZ input enables sleep mode with guaranteed data retention; reduces active power during idle bursts |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated for 256K × 36 configuration per Renesas datasheet revision 6.42.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Positive-edge-triggered master clock; all synchronous timing referenced to this signal |
| R/W | Read/Write Control | Synchronous command signal; determines access type for current load cycle (two-cycle latency) |
| ADV/LD | Burst Counter Control | LOW loads new external address; HIGH advances internal burst counter - defines burst sequence initiation |
| BW1–BW4 | Byte Write Enables | Four independent active-low enables for 9-bit bytes; allows partial writes without masking logic |
| CE1, CE2, CE2 | Chip Enable Inputs | Three-signal enable scheme (CE1=LOW, CE2=LOW, CE2=HIGH required for select); supports multi-chip depth expansion |
| OE | Output Enable | Asynchronous; tri-states outputs immediately when HIGH - eliminates need for precise timing coordination |
| ZZ | Sleep Mode Input | Asynchronous; gates internal clock and reduces power consumption while retaining memory contents |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered input/output with pipelined timing |
| LBO | Burst Order Select | Static input; LOW = linear burst (0,1,2,3), HIGH = interleaved burst (0,2,1,3) - configures burst addressing pattern |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates dead cycles between consecutive reads/writes - enables continuous 133 MHz bus utilization without turnaround overhead |
| Internally synchronized OE | Removes requirement for external OE timing control - simplifies PCB layout and reduces FPGA/CPLD pin count |
| 4-word burst counter | Reduces address bus activity by 75% per burst; supports both linear and interleaved sequences for cache-line alignment |
| Individual byte write (BW1–BW4) | Enables granular 9-bit writes without external byte-lane gating - critical for protocol header manipulation in packet buffers |
| Three chip enables (CE1/CE2/CE2) | Allows seamless depth expansion across multiple devices using standard logic - no external decode logic required |
| Asynchronous ZZ sleep mode | Reduces dynamic power during idle periods while preserving data - extends thermal margin in dense telecom modules |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in ASIC-based switch fabric interfaces. IC Role / Device Role / Timing Role: High-speed dual-port buffer with zero-turnaround burst reads/writes synchronized to 133 MHz system clock. Use Value: Eliminates bus idle cycles during back-to-back packet processing, increasing effective throughput by up to 25% versus standard SSRAMs. |
Use Scenario: Frame buffering in OC-48/STM-16 SONET/SDH line cards requiring deterministic latency and burst-aligned access. IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic store between framer and DSP subsystems with 4-word burst alignment to ATM cell boundaries. Use Value: Linear burst mode matches 53-byte ATM cell payload structure, reducing address generation overhead in framer logic. |
| Industrial PLC Data Cache | Medical Imaging Pipeline Buffer |
|
Use Scenario: Real-time I/O status caching and program execution stack storage in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-grade memory providing reliable 133 MHz burst access across –40°C to +85°C ambient range. Use Value: Guaranteed data retention in ZZ sleep mode during brown-out events preserves critical state without battery backup. |
Use Scenario: Pixel-line buffering in digital X-ray or MRI front-end acquisition systems with real-time DMA transfers. IC Role / Device Role / Timing Role: Pipelined SRAM interfacing directly to ADC/DAC controllers with 36-bit parallel I/O and sub-8 ns tCD. Use Value: 3.3V I/O supply (VDDQ) decoupled from core VDD enables clean analog-domain interfacing without level-shifting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133BAXI | Same 256K × 36 organization and 133 MHz speed, but uses QDR-II architecture with separate read/write ports and no ZBT™ turnaround optimization | Requires dual-port controller logic; better suited for simultaneous read/write workloads than burst-sequential packet buffering | Select when true concurrent access is required; avoid if ZBT™ zero-turnaround timing is mandatory for legacy interface compliance |
| AS7C3256B-133JCIN | 256K × 36, 133 MHz, but lacks burst counter, ZBTTM, and individual byte write - only supports single-word random access | Lower gate count and cost, but cannot emulate burst behavior needed for cache-line or packet-buffer applications | Choose for simple FIFO or register-file use cases where burst capability and bus turnaround elimination are unnecessary |
Compared with CY7C1362BV33-133BAXI and AS7C3256B-133JCIN, the 71V65803S133BG uniquely delivers zero-bus-turnaround timing and integrated 4-word burst control - making it irreplaceable in legacy telecom and networking designs requiring strict cycle-accurate ZBT™ compliance.
Availability
71V65803S133BG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, industrial PLC data caching, and medical imaging pipeline buffering requiring stable component supply across extended product lifecycles.
Supply support for 71V65803S133BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V65803S133BG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency memory buffering in communications equipment where deterministic burst timing and bus efficiency are critical.
FAQ
What is the maximum operating frequency of the 71V65803S133BG?
The 71V65803S133BG is rated for 133 MHz operation (7.5 ns cycle time) across the full industrial temperature range (–40°C to +85°C). This frequency is guaranteed with proper termination, VDD/VDDQ within 3.135 V–3.465 V, and setup/hold timing compliance per the Renesas datasheet revision 6.42.
Does the 71V65803S133BG support both linear and interleaved burst modes?
Yes, the 71V65803S133BG supports both burst orders via the LBO pin: LBO = LOW selects linear burst (0,1,2,3), and LBO = HIGH selects interleaved burst (0,2,1,3). This is confirmed in the Functional Timing Diagram and Burst Sequence Tables of the official datasheet.
What package type is used for the 71V65803S133BG?
The 71V65803S133BG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin configuration matches the 256K × 36 organization and is documented in Figure 5 ("Pin Configuration – 256K x 36, PKG100") of the datasheet.
How does the ZBTTM feature improve system performance in the 71V65803S133BG?
The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S133BG eliminates dead cycles between consecutive read and write operations - allowing immediate bus direction reversal. This increases effective memory bandwidth by up to 25% in burst-intensive applications like packet buffering, as verified in the Synchronous Truth Table and Functional Block Diagram.
Can the 71V65803S133BG operate with different supply voltages for core and I/O?
Yes, the 71V65803S133BG uses separate supplies: VDD (3.3 V ±5%) powers the core logic, and VDDQ (3.3 V ±5%) powers the I/O buffers. This separation allows independent noise filtering and improves signal integrity in mixed-signal systems - explicitly defined in the Recommended DC Operating Conditions table.
71V65803S133BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65803S133BG FAQ
1.How can I place an order for 71V65803S133BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65803S133BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65803S133BG reliable?
The price and inventory of 71V65803S133BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S133BG is usually 5 days.
3.What payment methods are accepted for 71V65803S133BG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65803S133BG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65803S133BG?
71V65803S133BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65803S133BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65803S133BG?
For technical support, including 71V65803S133BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S133BG requirements.
6.How does Aetrix verify that 71V65803S133BG is sourced from the original manufacturer or authorized distributors?
All 71V65803S133BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S133BG meets industry standards.
7.What is the process for return or replacement of 71V65803S133BG?
All 71V65803S133BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S133BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65803S133BG part is unused and in its original packaging.
Return procedure for 71V65803S133BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65803S133BG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
Microchip Technology
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