Renesas 71V65803S133BG8

Overview

71V65803S133BG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture. It supports pipelined read/write operations in high-speed networking and packet buffering applications.

For engineers reviewing the 71V65803S133BG8 datasheet, 71V65803S133BG8 pinout, 71V65803S133BG8 application, or 71V65803S133BG8 equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), three chip enables for depth expansion, and JEDEC-standard 119-ball BGA packaging with industrial temperature range (–40°C to +85°C).

Technical Context

The 71V65803S133BG8 implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its internal burst counter enables 4-word linear or interleaved bursts controlled by the LBO pin, while ADV/LD manages external address load versus internal counter advance.

ZBT operation eliminates dead cycles between consecutive reads and writes via internally synchronized output buffer enable-removing need for OE timing control-and supports pipelined outputs with two-cycle latency from address/control registration to data transfer.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGA), BG119 footprint (12 mm × 12 mm), with 3.3V core and I/O rails, thermal pad exposed on bottom for enhanced heat dissipation in dense PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV18-133BZI and AS7C3256A-133JCIN, the 71V65803S133BG8 delivers true zero-bus-turnaround operation and hardware burst sequencing-reducing system-level timing complexity and enabling higher effective bandwidth in burst-intensive protocols like PCI-X and RapidIO.

Availability

71V65803S133BG8 is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, industrial PLC data logging, and medical imaging frame store applications requiring stable component supply across extended product lifecycles.

Supply support for 71V65803S133BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65803S133BG8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency data buffering in networking infrastructure and real-time embedded systems demanding deterministic burst performance.

FAQ

What is the memory organization and density of the 71V65803S133BG8?

The 71V65803S133BG8 is configured as 256K × 36-bit, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This organization supports native 36-bit data paths used in high-end networking ASICs and FPGAs. The device shares pin compatibility with the 512K × 18-bit variant (71V65603), allowing layout reuse across density options.

Does the 71V65803S133BG8 support burst mode, and how is it controlled?

Yes, the 71V65803S133BG8 supports 4-word burst mode via its internal hardware burst counter. Burst sequence order-linear or interleaved-is selected by the static LBO pin. Address advancement is managed by the synchronous ADV/LD signal: low loads a new external address, high increments the internal counter. This eliminates need for external burst logic.

What package type and footprint does the 71V65803S133BG8 use?

The 71V65803S133BG8 uses a 119-ball fine-pitch BGA (BG119) package per JEDEC MO-207AD, with 0.8 mm ball pitch and 12 mm × 12 mm body size. It features an exposed thermal pad on the underside for improved thermal performance in high-power-density applications such as telecom line cards.

How does the ZBT™ feature improve system-level timing in the 71V65803S133BG8?

The ZBT™ (Zero Bus Turnaround) feature in the 71V65803S133BG8 eliminates dead cycles between consecutive read and write operations by synchronizing output buffer enable internally. This allows immediate bus direction reversal without wait states-critical for sustaining peak bandwidth in burst-oriented protocols like RapidIO and PCI-X where back-to-back accesses dominate.

What are the voltage and temperature specifications for the 71V65803S133BG8?

The 71V65803S133BG8 operates at VDD = 3.3 V ±5% and VDDQ = 3.3 V ±5%, with guaranteed functionality across –40°C to +85°C (industrial grade). Absolute maximum ratings include terminal voltage limits of –0.5 V to VDDQ +0.5 V on I/O pins and –0.5 V to +4.6 V on all other terminals.