Renesas 71V65803S133BGG

Overview

71V65803S133BGG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock speed (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs. It supports 4-word burst (linear/interleaved), individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-speed networking packet buffers and telecom line-card data path memory.

For engineers reviewing the 71V65803S133BGG datasheet, 71V65803S133BGG pinout, 71V65803S133BGG application, or 71V65803S133BGG equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100/BGA-119/fBGA-165 package compatibility, 3.3V I/O and core supply requirements, and industrial-grade thermal performance.

Technical Context

The 71V65803S133BGG implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising CLK edge. Its ZBT™ feature eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.

It features pipelined output registers, asynchronous OE and ZZ inputs, three chip enables (CE1/CE2/CE2) for depth expansion, and static LBO input selecting linear or interleaved burst order. All synchronous signals require setup/hold timing relative to CLK, with data valid two cycles after address/control load.

Key Specifications

Pinout & Package

71V65803S133BGG is packaged in a 119-ball fine-pitch ball grid array (BGG119), JEDEC-standard, 12 mm × 12 mm body, 0.8 mm pitch, with exposed thermal pad. Pinout conforms to BG119 layout per Renesas datasheet revision 6.42.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-133BZXI and AS7C3256A-133JCIN, the 71V65803S133BGG uniquely delivers ZBT™-optimized burst throughput and industrial temperature support in a single-package solution-critical for telecom and real-time control where deterministic latency and thermal robustness are mandatory.

Availability

71V65803S133BGG is available at Aetrix Electronics and suitable for packet buffer memory, telecom line card subsystems, and industrial PLC data cache requiring stable component supply, long-term lifecycle assurance, and industrial-grade thermal performance.

Supply support for 71V65803S133BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S133BGG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency data buffering in networking, telecom, and real-time control systems demanding zero bus turnaround and deterministic burst timing.

FAQ

What is the memory organization and density of the 71V65803S133BGG?

The 71V65803S133BGG is configured as 256K × 36-bit, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. It also supports 512K × 18-bit operation via pin strapping or configuration, maintaining identical timing and ZBT™ functionality. This dual-configuration flexibility allows system designers to optimize data bus width versus address space without changing the 71V65803S133BGG footprint or timing model.

Does the 71V65803S133BGG support true zero bus turnaround (ZBT™)?

Yes, the 71V65803S133BGG implements Renesas' licensed ZBT™ architecture, which eliminates dead cycles between consecutive read and write operations. This is achieved via internal burst counter logic, synchronous ADV/LD control, and pipelined output registers-ensuring continuous bus utilization at 133 MHz. The 71V65803S133BGG datasheet confirms ZBT™ compliance under all supported burst modes and temperature grades.

What package type and pin count does the 71V65803S133BGG use?

The 71V65803S133BGG uses a 119-ball fine-pitch ball grid array (BGG119) package, JEDEC-standard, with 0.8 mm pitch and 12 mm × 12 mm body size. The "BGG" suffix explicitly denotes this BGA variant. Pinout matches the BG119 layout documented in Renesas datasheet revision 6.42, including dedicated VDDQ, VSS, and thermal pad connections.

How does the burst mode operate on the 71V65803S133BGG?

The 71V65803S133BGG supports 4-word burst sequences controlled by the LBO pin: LBO = LOW selects linear order (A0, A1, A2, A3); LBO = HIGH selects interleaved order (A0, A2, A1, A3). Burst initiation occurs when ADV/LD = HIGH after initial address load, and the internal counter advances automatically. Each burst word appears two clock cycles after its corresponding ADV/LD assertion, preserving full 133 MHz throughput.

What are the voltage and temperature specifications for the 71V65803S133BGG?

The 71V65803S133BGG operates with VDD = 3.3 V ±5% and VDDQ = 3.3 V ±5%, supporting industrial temperature range –40°C to +85°C. Absolute maximum ratings specify terminal voltage limits of –0.5 V to VDDQ +0.5 V on I/O pins and –0.5 V to +4.6 V on other terminals. These specs are validated per Renesas datasheet section 6.42 and apply to the BGG119 package variant.