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Renesas 71V65803S133BGG8
- Part No.:
- 71V65803S133BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65803S133BGG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,948
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Product details
Overview
71V65803S133BGG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock speed (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs. It supports 4-word burst (linear/interleaved), individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-throughput packet buffering and network switch fabric memory subsystems.
For engineers reviewing the 71V65803S133BGG8 datasheet, 71V65803S133BGG8 pinout, 71V65803S133BGG8 application, or 71V65803S133BGG8 equivalent, key selection criteria include ZBT™ timing compatibility, TQFP-100/BGA-119/fBGA-165 package options, 3.3V I/O and core supply, burst counter behavior, and industrial-grade thermal reliability.
Technical Context
The 71V65803S133BGG8 implements a fully synchronous, clock-edge-triggered interface with address/control/data registered on the rising CLK edge. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.
It features pipelined output registers, asynchronous OE and ZZ inputs, three chip enables (CE1/CE2/CE2) for depth expansion, and static LBO input selecting linear or interleaved burst order. All synchronous signals require setup/hold timing relative to CLK; outputs are valid two cycles after address/control registration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.4 Mbit); supports 512K × 18-bit mode via configuration |
| Clock Frequency | 133 MHz (7.5 ns cycle time); enables 150 MHz operation per spec - actual rated speed is 133 MHz for this variant |
| Access Time | 3.8 ns clock-to-data (tCD) - defines minimum latency from CLK edge to valid output data |
| Supply Voltage | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - requires dual 3.3V rails with independent decoupling |
| Operating Temperature | –40°C to +85°C (industrial grade) - validated for extended thermal cycling in telecom infrastructure |
| Burst Capability | 4-word burst (linear or interleaved) - reduces address bus traffic by 75% per burst sequence |
| Power Management | ZZ input enables sleep mode with guaranteed data retention - cuts dynamic power during idle periods |
Pinout & Package
Packaged in JEDEC-standard 119-ball BGA (BGG119), 14 mm × 20 mm footprint, RoHS-compliant, green-part qualified. Pinout matches BG119 mechanical layout with VDDQ, VSS, and I/O banks distributed for signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master timing reference for all synchronous registers (address, control, data) |
| R/W | Read/Write Control | Synchronous signal defining load-cycle direction; determines read vs. write two cycles later |
| ADV/LD | Burst Counter Control | LOW loads external address; HIGH advances internal burst counter - enables seamless burst sequencing |
| LBO | Burst Order Select | Static input: LOW = linear burst (0,1,2,3), HIGH = interleaved (0,2,1,3) - sets memory access pattern |
| BW1–BW4 | Byte Write Enables | Four active-low synchronous controls for 9-bit byte segments - enables partial-word writes without masking logic |
| CE1, CE2, CE2 | Chip Enable Inputs | Three enables (CE1/CE2 active-low, CE2 active-high) allow flexible depth expansion and deselection control |
| ZZ | Asynchronous Sleep | HIGH gates internal CLK and reduces power to minimum; retains data without external refresh |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered input/output with separate VDDQ supply |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between consecutive reads/writes - sustains 100% bus utilization in burst-heavy traffic |
| Internally synchronized OE | Removes need for precise OE timing control - outputs remain stable even if OE is tied low continuously |
| 4-word burst counter | Reduces external address generation overhead - one address initiates four sequential memory accesses |
| Single R/W pin | Simplifies control logic versus separate RD/WR signals - lowers FPGA/ASIC pin count and routing complexity |
| Three chip enables | Enables seamless 2× or 4× depth expansion without external decoding - supports scalable memory subsystems |
Applications
| Network Packet Buffering | Telecom Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer memory interfacing directly to MAC or switch ASIC via parallel bus. Use Value: ZBT™ architecture enables back-to-back frame writes/reads at line rate without bus stalls, improving throughput by ≥20% over standard SSRAMs. | Use Scenario: Holding cell/packet headers and pointers in ATM or MPLS switching engines. IC Role / Device Role / Timing Role: Synchronous SRAM acting as descriptor cache and context memory for crossbar arbitration logic. Use Value: 133 MHz clock and pipelined outputs meet sub-10 ns timing budgets required for OC-192/STM-64 interfaces. |
| Industrial PLC Data Logging | Medical Imaging Frame Store |
Use Scenario: Capturing sensor history and event logs in deterministic real-time control systems. IC Role / Device Role / Timing Role: Nonvolatile-buffered memory staging data prior to SD card or flash write operations. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation in uncontrolled cabinet environments. | Use Scenario: Temporary storage of uncompressed ultrasound or MRI scan lines during acquisition. IC Role / Device Role / Timing Role: High-speed frame buffer feeding FPGA-based image processing pipelines. Use Value: 36-bit wide bus and 4-word burst support match common pixel packing formats (e.g., 12-bit RGB + metadata), minimizing bus cycles per frame. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133BZXI | Same 256K × 36 organization, 133 MHz, but uses QDR-II architecture with separate read/write ports | Requires dual-port controller logic; not ZBT™-compatible - no zero-turnaround benefit in single-bus systems | Select only if system already implements QDR-II protocol and needs concurrent read/write capability |
| AS7C331024B-133BIN | 256K × 36, 133 MHz, but standard sync SRAM (no ZBT™, no burst counter, no ADV/LD) | Lacks burst and zero-turnaround - imposes 1-cycle gap between reads/writes, reducing effective bandwidth by ~15% | Choose for cost-sensitive designs where ZBT™ timing is unnecessary and simpler control is preferred |
Compared with CY7C1362BV33-133BZXI and AS7C331024B-133BIN, the 71V65803S133BGG8 uniquely delivers zero bus turnaround and integrated burst addressing - critical for maximizing throughput in legacy parallel-bus switch fabrics without redesigning controller logic.
Availability
71V65803S133BGG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric memory, and industrial PLC data logging requiring stable component supply across extended product lifecycles.
Supply support for 71V65803S133BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V65803S133BGG8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed networking and real-time embedded systems demanding deterministic, low-latency memory access with minimal bus protocol overhead.
FAQ
What is the maximum operating frequency of the 71V65803S133BGG8?
The 71V65803S133BGG8 is rated for 133 MHz operation (7.5 ns cycle time), delivering guaranteed tCYC ≤ 7.5 ns across industrial temperature (–40°C to +85°C) and 3.3 V ±5% supply. While the ZBT™ architecture supports up to 150 MHz in some variants, this specific part number is characterized and warranted at 133 MHz per its official Renesas datasheet revision.
Does the 71V65803S133BGG8 support both 256K × 36 and 512K × 18 configurations?
Yes, the 71V65803S133BGG8 supports both memory configurations. The 256K × 36 mode uses A0–A17 (18 address bits), while the 512K × 18 mode repurposes A18 as an additional address bit - confirmed in functional block diagrams and pin descriptions for PKG100 and BG119 packages. Configuration is determined by system address mapping, not a mode pin.
How does the ZBTTM feature eliminate dead cycles in the 71V65803S133BGG8?
The ZBTTM feature in the 71V65803S133BGG8 removes bus turnaround delays by allowing immediate read-after-write or write-after-read transitions. This is achieved through internal pipelining, burst counter synchronization, and elimination of OE timing constraints - enabling consecutive memory operations without inserting idle cycles, unlike conventional synchronous SRAMs.
What is the function of the ADV/LD and LBO pins on the 71V65803S133BGG8?
On the 71V65803S133BGG8, ADV/LD is a synchronous control pin: LOW loads a new external address, HIGH advances the internal burst counter. LBO is a static input selecting burst order - LOW enables linear (0,1,2,3), HIGH enables interleaved (0,2,1,3). Both are essential for configuring burst behavior without external logic.
Can the 71V65803S133BGG8 operate with OE tied permanently low?
Yes, the 71V65803S133BGG8 supports OE tied low continuously because its output enable is internally synchronized - eliminating the need for precise OE timing control. When OE is low, outputs drive valid data; when high, they tri-state. Tying OE low simplifies board design and avoids timing violations in high-speed systems.
71V65803S133BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65803S133BGG8 FAQ
1.How can I place an order for 71V65803S133BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65803S133BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65803S133BGG8 reliable?
The price and inventory of 71V65803S133BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S133BGG8 is usually 5 days.
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Once your 71V65803S133BGG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65803S133BGG8?
For technical support, including 71V65803S133BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S133BGG8 requirements.
6.How does Aetrix verify that 71V65803S133BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V65803S133BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S133BGG8 meets industry standards.
7.What is the process for return or replacement of 71V65803S133BGG8?
All 71V65803S133BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S133BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65803S133BGG8 part is unused and in its original packaging.
Return procedure for 71V65803S133BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65803S133BGG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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