Renesas 71V65803S133BGGI

Overview

71V65803S133BGGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock speed (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs - deployed in high-throughput packet buffering, network switch fabric, and real-time DSP memory subsystems.

For engineers reviewing the 71V65803S133BGGI datasheet, 71V65803S133BGGI pinout, 71V65803S133BGGI application, or 71V65803S133BGGI equivalent, key selection criteria include burst-mode timing compliance, industrial-temperature support (–40°C to +85°C), TQFP/BGA package compatibility, and ZBT™-specific control logic for dead-cycle elimination between read/write transitions.

Technical Context

The 71V65803S133BGGI implements a fully synchronous, clock-edge-triggered interface with address/control/data registers aligned to the rising edge of CLK. Its ZBT™ architecture eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions without idle cycles.

It supports 4-word linear or interleaved burst sequences controlled by the static LBO pin, uses three chip enables (CE1, CE2, CE2) for depth expansion, and integrates an on-chip burst counter with ADV/LD-driven address loading or incrementing - all while maintaining pipelined output registration and asynchronous OE/ZZ control.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 119-ball BGA (BGG119), or 165-fine-pitch BGA (BQG165). This variant - 71V65803S133BGGI - uses the 119-ball BGA (BGG119) package with industrial temperature rating and green RoHS-compliant construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV18-133BZI and AS7C3256B-133JCIN, the 71V65803S133BGGI uniquely delivers 36-bit ZBT™-optimized burst access with industrial temperature support and integrated burst counter - making it irreplaceable in telecom switch fabric and high-speed DSP memory subsystems requiring deterministic latency.

Availability

71V65803S133BGGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and DSP algorithm acceleration requiring stable component supply, long-term lifecycle assurance, and industrial-grade thermal performance.

Supply support for 71V65803S133BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65803S133BGGI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency memory subsystems in networking equipment, base stations, and real-time signal processing platforms.

FAQ

What is the memory organization and density of the 71V65803S133BGGI?

The 71V65803S133BGGI is a 256K × 36-bit synchronous SRAM, delivering 9,437,184 bits (9.4 Mbit) of high-speed memory. It supports the 512K × 18-bit configuration via pin-compatible variants, but the 71V65803S133BGGI itself is configured exclusively as 256K × 36. This organization matches 32-bit processor data buses plus parity or ECC bits, commonly used in telecom and networking ASIC interfaces.

Does the 71V65803S133BGGI support burst mode, and how is it configured?

Yes, the 71V65803S133BGGI supports 4-word burst mode with selectable linear or interleaved sequences. Burst behavior is controlled by the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear order, LBO = HIGH selects interleaved. The ADV/LD pin loads new addresses (LOW) or advances the internal burst counter (HIGH), enabling efficient sequential access without repeated address bus transactions - a core function of the 71V65803S133BGGI's ZBT™ architecture.

What is the significance of the "S133" suffix in 71V65803S133BGGI?

The "S133" suffix in 71V65803S133BGGI denotes a 133 MHz maximum operating frequency rating (7.5 ns cycle time). This speed grade is validated across the full industrial temperature range (–40°C to +85°C) and specifies guaranteed timing parameters including tCD = 3.8 ns clock-to-data access. It distinguishes the 71V65803S133BGGI from faster variants like the S150 (150 MHz) and slower S100 (100 MHz) versions within the same family.

How does the ZBTTM feature improve system performance in the 71V65803S133BGGI?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S133BGGI eliminates mandatory idle cycles when switching between read and write operations. Unlike conventional SRAMs requiring bus release/reacquisition, the 71V65803S133BGGI allows immediate back-to-back read-after-write or write-after-read transitions - increasing effective bandwidth by up to 30% in burst-intensive applications like packet buffering and video frame stores.

What package type and environmental rating does the 71V65803S133BGGI use?

The 71V65803S133BGGI uses a 119-ball fine-pitch ball grid array (BGA) package designated "BGGI", which indicates industrial temperature grade (–40°C to +85°C) and green RoHS-compliant construction. The "I" suffix confirms industrial qualification, and the BGG package footprint is JEDEC-standardized for automated assembly and thermal reliability in dense PCB layouts typical of telecom and industrial control modules.