Renesas 71V65803S133BGGI8

Overview

71V65803S133BGGI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock speed (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst modes, individual byte write control (BW1–BW4), and operates across –40°C to +85°C for industrial applications in high-speed networking and packet buffering.

For engineers reviewing the 71V65803S133BGGI8 datasheet, 71V65803S133BGGI8 pinout, 71V65803S133BGGI8 application, or 71V65803S133BGGI8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP/BGA package compatibility, 3.3V I/O supply (VDDQ), synchronous burst counter behavior, and industrial temperature support - all critical for deterministic memory subsystem design in telecom infrastructure and real-time data path systems.

Technical Context

The 71V65803S133BGGI8 implements a fully synchronous, clock-edge-triggered interface with address/control/data registers aligned to the rising CLK edge. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internally synchronized output buffer enable and pipelined output registers, enabling continuous bus utilization.

It features a 4-word burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved sequences. Three chip enables (CE1, CE2, CE2) provide flexible depth expansion, while ZZ enables asynchronous sleep mode for power reduction without data loss.

Key Specifications

Pinout & Package

71V65803S133BGGI8 is packaged in a 119-ball fine-pitch ball grid array (BGG119), JEDEC standard, with 0.8 mm pitch and 12 mm × 12 mm body size. Pin functions are defined per the 256K × 36 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C3256A-133JCIN, the 71V65803S133BGGI8 uniquely delivers ZBT™-optimized bus efficiency and integrated burst addressing - critical for minimizing latency in packet-forwarding pipelines where back-to-back read/write transitions dominate.

Availability

71V65803S133BGGI8 is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, real-time data acquisition, and industrial PLC memory expansion requiring stable component supply, long-term lifecycle assurance, and industrial-grade thermal performance.

Supply support for 71V65803S133BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S133BGGI8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for deterministic, high-throughput memory subsystems in networking equipment, baseband units, and real-time control systems demanding zero bus turnaround and burst efficiency.

FAQ

What is the memory organization and density of the 71V65803S133BGGI8?

The 71V65803S133BGGI8 is configured as 256K × 36-bit, delivering 9,437,184 bits (9 Mbit) of synchronous SRAM. It also supports a 512K × 18-bit organization via pin configuration. This dual-mode flexibility allows system designers to optimize data bus width and address decoding without changing the physical device, making the 71V65803S133BGGI8 adaptable to varying controller interface requirements.

Does the 71V65803S133BGGI8 support burst read and write operations?

Yes, the 71V65803S133BGGI8 supports 4-word burst operations in both linear and interleaved sequences, selected by the LBO pin. Burst mode is initiated using the ADV/LD signal: LOW loads a new address, HIGH advances the internal counter. Each burst cycle delivers four consecutive words with single address setup, reducing bus overhead and improving effective bandwidth - a core feature confirmed in the functional block diagram and timing tables for the 71V65803S133BGGI8.

What is the role of the ZZ pin on the 71V65803S133BGGI8?

The ZZ pin on the 71V65803S133BGGI8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device in its lowest power-consumption state while guaranteeing data retention. This feature is essential for power-sensitive applications such as remote radio units or battery-backed industrial controllers, where the 71V65803S133BGGI8 can enter and exit sleep mode without external reset or reinitialization.

How does the ZBTTM feature improve system performance in the 71V65803S133BGGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S133BGGI8 eliminates idle cycles between consecutive read and write operations by synchronizing output buffer enable internally. Unlike conventional SRAMs requiring OE control and bus turnaround delays, the 71V65803S133BGGI8 permits immediate read-after-write or write-after-read transitions - sustaining full 133 MHz bus utilization in high-throughput packet buffering and real-time control applications.

What package type and pin count does the 71V65803S133BGGI8 use?

The 71V65803S133BGGI8 uses a 119-ball fine-pitch ball grid array (BGG119) package, JEDEC-compliant with 0.8 mm pitch and 12 mm × 12 mm body size. The "BGGI8" suffix explicitly denotes this industrial-grade BGA variant. Pin assignments follow the 256K × 36 configuration, including dedicated I/O banks (I/O0–I/O31, I/OP1–I/OP4), three chip enables, and burst control signals (ADV/LD, LBO), all verified in the official Renesas pin configuration diagrams.