Renesas 71V65803S133BGI

Overview

71V65803S133BGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock speed (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs. It supports 4-word burst (linear/interleaved), individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-speed networking packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the 71V65803S133BGI datasheet, 71V65803S133BGI pinout, 71V65803S133BGI application, or 71V65803S133BGI equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter behavior under ADV/LD control, and industrial-grade thermal stability for telecom infrastructure designs.

Technical Context

The 71V65803S133BGI implements a fully synchronous, clock-edge-triggered interface with address/control/data registers sampled on the rising CLK edge. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internal burst counter synchronization and pipelined output registers that decouple data output timing from address/control setup.

It features three chip enables (CE1, CE2 active-low; CE2 active-high) for depth expansion, asynchronous OE and ZZ inputs, static LBO for burst order selection, and synchronized R/W, ADV/LD, CEN, and BWx signals - all meeting strict setup/hold timing relative to CLK. The device supports both linear and interleaved 4-word burst sequences with wraparound addressing.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm footprint, lead-free and RoHS-compliant (BGI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C3256P-133JCIN, the 71V65803S133BGI uniquely delivers ZBT™-enabled zero-cycle turnaround and integrated burst sequencing - critical for minimizing bus arbitration overhead in high-throughput packet and signal processing pipelines.

Availability

71V65803S133BGI is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA co-processor memory, and industrial data logging requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for 71V65803S133BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S133BGI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking equipment, base stations, and real-time control systems demanding deterministic timing and zero bus turnaround.

FAQ

What is the memory organization and maximum operating frequency of the 71V65803S133BGI?

The 71V65803S133BGI is configured as 256K × 36-bit (9.4 Mbit), supporting 512K × 18-bit mode via pin strapping. It operates at up to 133 MHz (7.5 ns cycle time) with guaranteed 3.8 ns clock-to-data access. This frequency enables sustained 532 MB/s burst throughput and meets timing requirements for high-speed packet buffering and FPGA co-processor interfaces.

How does the ZBTTM feature improve system performance in the 71V65803S133BGI?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S133BGI eliminates idle cycles between consecutive read and write operations. By synchronizing internal burst counters and pipelining outputs, it enables immediate bus direction reversal - critical for maintaining full bandwidth in back-to-back memory transactions typical in networking and DSP applications. This avoids pipeline stalls seen in conventional SRAMs.

What are the voltage and temperature specifications for the 71V65803S133BGI?

The 71V65803S133BGI requires VDD = 3.3 V ±5% (core) and VDDQ = 3.3 V ±5% (I/O), with industrial-grade operation from –40°C to +85°C. Absolute maximum ratings allow terminal voltages up to VDD +0.5 V on I/O pins and –0.5 V to +4.6 V on other terminals. These specs ensure robustness in telecom infrastructure and factory automation environments.

Does the 71V65803S133BGI support burst operations, and how is burst order controlled?

Yes, the 71V65803S133BGI supports 4-word burst operations in both linear and interleaved sequences. Burst order is selected via the static LBO pin: LOW selects linear (A0, A1, A2, A3), HIGH selects interleaved (A0, A2, A1, A3). The ADV/LD pin controls burst progression - LOW loads a new address, HIGH advances the internal counter - enabling efficient streaming without repeated address bus activity.

What package type and pin count does the 71V65803S133BGI use, and is it RoHS-compliant?

The 71V65803S133BGI uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) package, measuring 14 mm × 20 mm. The "BGI" suffix denotes lead-free, RoHS-compliant construction with matte tin finish. Pin assignments match industry-standard layouts for drop-in compatibility in existing PCB designs targeting ZBT™ SRAMs.