Renesas 71V65803S133BGI8

Overview

71V65803S133BGI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock frequency (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs - designed for high-bandwidth memory subsystems in network switches, packet buffers, and real-time DSP systems.

For engineers reviewing the 71V65803S133BGI8 datasheet, 71V65803S133BGI8 pinout, 71V65803S133BGI8 application, or 71V65803S133BGI8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and 3.3V I/O voltage tolerance with VDDQ decoupling requirements.

Technical Context

This SRAM implements a fully synchronous, clock-edge-triggered interface with dual-cycle latency: address/control registration on one clock edge and data transfer two cycles later. It integrates an on-chip 4-word burst counter with linear/interleaved sequencing controlled by the LBO pin, and supports individual byte write enables (BW1–BW4) for granular 9-bit writes.

The device uses three chip enables (CE1, CE2, CE2) with mixed polarity for flexible depth expansion, includes asynchronous OE and ZZ inputs for output control and sleep mode, and features internally synchronized output buffer enable - eliminating external OE timing management in pipelined systems.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch and exposed thermal pad (GND-connected). Compatible with standard reflow profiles and automated optical inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C3256A-133JCIN, the 71V65803S133BGI8 delivers deterministic ZBT™ timing, integrated burst sequencing, and industrial-grade reliability - making it optimal for high-throughput, low-latency memory subsystems where bus efficiency and thermal robustness are critical.

Availability

71V65803S133BGI8 is available at Aetrix Electronics and suitable for network packet buffering, DSP data caching, telecom line card control, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V65803S133BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65xx family was engineered specifically for high-speed, low-latency memory subsystems in communications equipment - emphasizing ZBT™ timing compliance, industrial temperature resilience, and pin-compatible scalability across density variants.

FAQ

What is the maximum operating frequency and corresponding cycle time for the 71V65803S133BGI8?

The 71V65803S133BGI8 is rated for 133 MHz operation, corresponding to a 7.5 ns clock cycle time. Its clock-to-data access time is specified at 3.8 ns, and all timing parameters - including setup/hold for address, control, and data - are guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. This ensures reliable operation in high-speed packet processing and real-time control applications.

Does the 71V65803S133BGI8 support both 256K × 36 and 512K × 18 configurations?

Yes, the 71V65803S133BGI8 is the 256K × 36 variant of the IDT71V65603/5803 family. The same die supports both configurations via pin strapping and internal decoding - the 71V65803S133BGI8 is configured for 256K × 36 (A0–A17 address lines, 36-bit I/O bus), while the 71V65603S133BGI8 implements 512K × 18. Both share identical timing, packaging, and ZBT™ functionality.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S133BGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S133BGI8 allows immediate transition from a write to a read (or vice versa) without inserting idle cycles. This is achieved through internal pipeline staging and simultaneous bus direction control - the device internally manages bus release and acquisition, enabling back-to-back transactions at full 133 MHz clock rate. No external bus turnaround logic is required.

What are the voltage requirements for VDD and VDDQ on the 71V65803S133BGI8?

The 71V65803S133BGI8 requires VDD = 3.3 V ±5% (3.135 V to 3.465 V) for core logic and VDDQ = 3.3 V ±5% for I/O drivers. These rails must be independently decoupled. VDDQ may be ramped before, after, or simultaneously with VDD - no strict power sequencing is mandated, but no I/O pin voltage may exceed VDDQ during power-up.

Can the 71V65803S133BGI8 operate in low-power mode, and how is it controlled?

Yes, the 71V65803S133BGI8 supports low-power sleep mode via the asynchronous ZZ input. When ZZ is driven HIGH, the internal clock tree is gated, reducing ICC to <100 µA while maintaining full data retention. The device exits sleep mode synchronously on the next valid CLK edge after ZZ returns LOW, with no reset or initialization sequence required.