Renesas 71V65803S133BQ

Overview

71V65803S133BQ from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz maximum clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture enabling immediate read-after-write transitions without dead cycles. It operates across industrial temperature range (–40°C to +85°C) and supports pipelined, burst-mode data transfers in networking and telecom switching systems.

For engineers reviewing the 71V65803S133BQ datasheet, 71V65803S133BQ pinout, 71V65803S133BQ application, or 71V65803S133BQ equivalent, key selection criteria include its 100-pin TQFP package, synchronous 4-word burst capability (linear/interleaved), individual byte write control (BW1–BW4), and support for depth expansion via three chip enables (CE1, CE2, CE2).

Technical Context

The 71V65803S133BQ implements a fully pipelined synchronous interface with positive-edge-triggered address, data, and control registers. Its ZBT™ architecture eliminates bus turnaround latency by allowing consecutive read and write operations without idle cycles, enabled by internal burst counter and ADV/LD-controlled address loading or incrementing.

It features dual power domains (VDD = 3.3 V ±5% core, VDDQ = 3.3 V ±5% I/O), asynchronous OE and ZZ inputs for output enable and sleep mode, and static LBO input selecting linear or interleaved burst order. All synchronous signals-including R/W, CEN, BWx, and CE-sample on rising CLK edge with defined setup/hold timing.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch and exposed thermal pad (PKG100). Pinout conforms to 256K × 36 configuration per functional diagrams and pin tables.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1370DV33-133AXC and AS7C3256A-133JCIN, the 71V65803S133BQ uniquely delivers zero bus turnaround and integrated burst sequencing in a single 100-pin TQFP package-enabling lower latency, reduced FPGA logic utilization, and simplified timing closure in telecom and industrial buffer designs.

Availability

71V65803S133BQ is available at Aetrix Electronics and suitable for packet buffering in Ethernet switches, cell-based ATM switch fabric memory, telecom line card data buffers, and industrial PLC real-time data logging requiring stable component supply and long-term industrial temperature support.

Supply support for 71V65803S133BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S133BQ belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-intensive memory buffering in network switching, telecom infrastructure, and real-time industrial control systems.

FAQ

What is the memory organization and total capacity of the 71V65803S133BQ?

The 71V65803S133BQ is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration supports 36-bit parallel data paths ideal for high-throughput packet buffering and telecom applications where wide data buses reduce transaction overhead. The device does not support 512K × 18 mode-its pinout and internal architecture are fixed to the 256K × 36 configuration.

Does the 71V65803S133BQ support burst mode, and how is burst order controlled?

Yes, the 71V65803S133BQ supports 4-word synchronous burst mode using an on-chip burst counter. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The ADV/LD pin controls whether the counter loads a new external address (LOW) or increments (HIGH), and the sequence wraps automatically after four words.

What are the power supply requirements for the 71V65803S133BQ?

The 71V65803S133BQ requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O drivers, 3.3 V ±5%). Both rails must be within specification across the full industrial temperature range (–40°C to +85°C). VSS is the common ground reference. No power sequencing is mandated, but no input or I/O pin voltage may exceed VDDQ during power-up ramp.

How does the ZBT™ (Zero Bus Turnaround) feature function in the 71V65803S133BQ?

The ZBT™ feature in the 71V65803S133BQ eliminates dead cycles between consecutive read and write operations by allowing immediate bus direction reversal. Unlike conventional SRAMs requiring idle cycles to tri-state the bus, the 71V65803S133BQ uses internal pipelining and synchronized OE to maintain valid data flow-enabling back-to-back reads and writes with no performance penalty. This is confirmed in the functional truth table and timing diagrams of the official datasheet.

What package type and pin count does the 71V65803S133BQ use?

The 71V65803S133BQ is supplied in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), designated PKG100, with 14 mm × 20 mm body size and 0.5 mm lead pitch. This package is explicitly documented for the 256K × 36 configuration in the pin configuration diagrams and mechanical drawings. It is not offered in BGA or fBGA variants under this specific part number suffix.