Renesas 71V65803S133BQG

Overview

71V65803S133BQG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 133 MHz clock speed (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-throughput packet buffering and network switch data planes where deterministic latency and bus efficiency are critical.

For engineers reviewing the 71V65803S133BQG datasheet, 71V65803S133BQG pinout, 71V65803S133BQG application, or 71V65803S133BQG equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP-100 package mapping, ZBT™ burst behavior, industrial-grade power sequencing guidance, and validated alternatives for memory subsystem redesigns requiring no dead cycles between read/write transitions.

Technical Context

The 71V65803S133BQG implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising CLK edge. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions without idle cycles - achieved via internal burst counter and ADV/LD-controlled address loading or incrementing.

It features three chip enables (CE1, CE2 low-active; CE2 high-active), asynchronous OE and ZZ inputs, and static LBO selection for linear/interleaved burst order. All I/Os are registered, with pipelined outputs delivering data two clocks after address/control assertion, and support for 3.3V VDD/VDDQ supplies with ±5% tolerance.

Key Specifications

Pinout & Package

71V65803S133BQG is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-140AC compliant, with 0.5 mm pitch and exposed thermal pad (not electrically connected). Pin 1 marked via corner notch; top-side marking includes "71V65803S133BQG" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC, the 71V65803S133BQG offers simpler single-ended clocking and lower system-level complexity; compared with AS7C3256A-133JCIN, it provides identical performance with established Renesas qualification and long-term industrial support.

Availability

71V65803S133BQG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V65803S133BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S133BQG belongs to Renesas' high-performance ZBT™ SRAM family, engineered specifically for deterministic, low-latency memory subsystems in networking and communications equipment where bus efficiency and timing predictability are non-negotiable.

FAQ

What is the maximum operating frequency and corresponding cycle time for the 71V65803S133BQG?

The 71V65803S133BQG is rated for 133 MHz operation, corresponding to a 7.5 ns clock cycle time. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device achieves 3.8 ns clock-to-data access (tCD), enabling tight system timing closure in high-speed data path designs.

Does the 71V65803S133BQG support both 256K × 36 and 512K × 18 configurations, and how is the mode selected?

Yes, the 71V65803S133BQG supports both 256K × 36-bit and 512K × 18-bit organizations. The configuration is determined by the number of address pins used: A0–A17 (18 pins) for 256K × 36; A0–A18 (19 pins) for 512K × 18. No mode pin or register setting is required - hardware address width defines the active memory map.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S133BQG?

The ZBTTM feature in the 71V65803S133BQG eliminates dead cycles by allowing immediate transition between read and write operations without bus turnaround delay. This is achieved via internal burst counter synchronization and ADV/LD-controlled address loading/incrementing, ensuring the bus remains active across consecutive accesses - critical for sustained 133 MHz throughput.

What are the voltage requirements for VDD, VDDQ, and control inputs on the 71V65803S133BQG?

The 71V65803S133BQG requires VDD = 3.3 V ±5% (3.135 V to 3.465 V) for core logic and VDDQ = 3.3 V ±5% for I/O drivers. Input high voltage (VIH) is 2.0 V min for control pins (referenced to VDD) and 2.0 V min for I/O pins (referenced to VDDQ), with absolute max ratings of VDD + 0.3 V and VDDQ + 0.3 V respectively.

Can the 71V65803S133BQG be used in industrial environments, and what thermal specifications apply?

Yes, the 71V65803S133BQG is qualified for industrial temperature operation from –40°C to +85°C. It meets JEDEC JESD22-A104 reliability standards for thermal cycling and is designed for use in telecom infrastructure, industrial PLCs, and base station equipment where ambient temperature extremes and long service life are required.