Renesas 71V65803S133BQG8

Overview

71V65803S133BQG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, supporting 133 MHz operation (7.5 ns clock cycle), zero bus turnaround (ZBT) for dead-cycle-free read/write transitions, pipelined outputs, and 4-word burst capability. It operates in industrial temperature range (–40°C to +85°C) and is used in high-speed networking packet buffers, telecom line cards, and FPGA co-processor memory subsystems.

For engineers reviewing the 71V65803S133BQG8 datasheet, 71V65803S133BQG8 pinout, 71V65803S133BQG8 application, or 71V65803S133BQG8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst order control via LBO, and individual byte write enable support for partial writes in cache-coherent systems.

Technical Context

The 71V65803S133BQG8 implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising edge of CLK. Its ZBT feature eliminates bus turnaround latency by allowing immediate read-after-write or write-after-read transitions without idle cycles, enabled by internal burst counter and ADV/LD-controlled address loading or incrementing.

It supports two burst modes-linear or interleaved-selected by static LBO input, and features three chip enables (CE1, CE2, CE2) with two-cycle deselect timing, asynchronous ZZ sleep mode for power reduction, and internally synchronized OE that can be tied low for simplified interface design.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm pitch, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256B-133JCIN, the 71V65803S133BQG8 uniquely delivers zero bus turnaround and integrated 4-word burst control - enabling simpler timing closure, lower FPGA resource usage, and higher effective bandwidth in burst-oriented embedded memory subsystems.

Availability

71V65803S133BQG8 is available at Aetrix Electronics and suitable for high-speed networking equipment, FPGA-based accelerators, telecom infrastructure, and industrial real-time controllers requiring stable component supply across extended product lifecycles.

Supply support for 71V65803S133BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and memory solutions for automotive, industrial, and communications markets.

The 71V65803S133BQG8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency memory interfaces in packet-processing, baseband, and real-time control systems where deterministic timing and bus efficiency are critical.

FAQ

What is the maximum supported clock frequency for the 71V65803S133BQG8?

The 71V65803S133BQG8 is rated for 133 MHz operation (7.5 ns clock period) under industrial temperature conditions (–40°C to +85°C) with 3.3 V ±5% supplies. This frequency is validated per AC timing specifications including tCYC, tCO, and tHZ, and supports sustained 4-word burst transfers at full bandwidth without derating.

Does the 71V65803S133BQG8 support both linear and interleaved burst modes?

Yes, the 71V65803S133BQG8 supports both linear and interleaved 4-word burst sequences, selected by the static LBO pin: LBO = LOW configures linear order (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The burst counter advances automatically on each rising CLK edge when ADV/LD = HIGH.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S133BQG8?

The ZBTTM feature in the 71V65803S133BQG8 removes bus turnaround latency by allowing immediate transition from a write cycle to a read cycle (or vice versa) without inserting idle cycles. This is achieved via internal pipelining, synchronized OE, and burst counter logic - ensuring the data bus remains active and productive across consecutive operations.

Can the 71V65803S133BQG8 be used with a 256K × 18 configuration?

No - the 71V65803S133BQG8 is specifically the 256K × 36-bit variant. The 512K × 18-bit configuration is implemented in the pin-compatible 71V65603S133BQG8. While both share the same ZBT architecture and timing, their address widths (A0–A17 vs. A0–A18), data bus layout, and pin assignments differ; they are not functionally interchangeable.

What is the purpose of the three chip enable pins (CE1, CE2, CE2) on the 71V65803S133BQG8?

The 71V65803S133BQG8 uses CE1 and CE2 as active-low enables and CE2 as an active-high enable to provide flexible depth expansion control. All three must be asserted (CE1 = L, CE2 = L, CE2 = H) to select the device; any violation initiates a two-cycle deselect, tri-stating the I/O bus - enabling clean multi-SRAM bank management without external glue logic.