Renesas 71V65803S133BQI

Overview

71V65803S133BQI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, supporting 133 MHz operation (7.5 ns clock cycle), zero bus turnaround (ZBT) architecture, and pipelined outputs. It features 4-word burst capability (linear or interleaved), individual byte write control (BW1–BW4), and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers and packet-switching ASIC/FPGA interfaces.

For engineers reviewing the 71V65803S133BQI datasheet, 71V65803S133BQI pinout, 71V65803S133BQI application, or 71V65803S133BQI equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter behavior under ADV/LD control, and industrial-grade thermal performance.

Technical Context

The 71V65803S133BQI implements a fully synchronous, clock-edge-triggered architecture where address, control, and data are registered on the rising edge of CLK. All operations-including load, burst, deselect, and suspend-are governed by precise timing relative to CLK, with data valid two cycles after address/control registration.

ZBT functionality eliminates dead cycles between read/write transitions via internal synchronization of output enable and burst counter logic. The device uses a static LBO input to select linear or interleaved burst order, and supports depth expansion using three chip enables (CE1, CE2, CE2) with dual-polarity logic (CE2 active-high).

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33256PFSI-133, the 71V65803S133BQI delivers identical ZBT timing and TQFP-100 mechanical compatibility, while AS7C33256PFSI-133 offers seamless drop-in substitution, and CY7C1362BV33-133AXC provides concurrent access at the cost of layout redesign.

Availability

71V65803S133BQI is available at Aetrix Electronics and suitable for high-speed network buffers, FPGA-based protocol accelerators, and industrial PLC data loggers requiring stable component supply, long-term lifecycle support, and industrial temperature compliance.

Supply support for 71V65803S133BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S133BQI belongs to Renesas' high-performance ZBT SRAM product line, engineered for deterministic, low-latency data buffering in wireline communications, test equipment, and real-time control systems.

FAQ

What is the maximum operating frequency of the 71V65803S133BQI?

The 71V65803S133BQI is rated for 133 MHz operation (7.5 ns clock cycle) across the full industrial temperature range (–40°C to +85°C). Its clock-to-data access time is guaranteed ≤7.5 ns at this frequency, enabling reliable use in 10G Ethernet and high-speed FPGA interfaces without derating.

Does the 71V65803S133BQI support both 256K × 36 and 512K × 18 configurations?

Yes, the 71V65803S133BQI supports both configurations via pin strapping and address mapping. In 256K × 36 mode, it uses A0–A17 (18 address bits); in 512K × 18 mode, it uses A0–A18 (19 address bits) and reconfigures I/O pins accordingly. The device datasheet specifies distinct pinouts and timing for each mode.

How does the ZBT™ feature eliminate dead cycles in the 71V65803S133BQI?

The ZBT™ feature in the 71V65803S133BQI removes bus turnaround latency by internally synchronizing output enable and burst counter logic. When transitioning between read and write cycles-or vice versa-the device avoids tri-state delays, allowing back-to-back accesses at full 133 MHz without idle clock cycles.

What is the function of the ADV/LD and LBO pins on the 71V65803S133BQI?

ADV/LD controls burst initiation: LOW loads a new external address; HIGH advances the internal burst counter. LBO selects burst order: LOW enables linear addressing (0,1,2,3); HIGH enables interleaved (0,2,1,3). Both are synchronous inputs critical for deterministic burst sequencing in streaming applications.

Can the 71V65803S133BQI operate with only two chip enables?

Yes-the 71V65803S133BQI requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH for selection. CE2 is active-high, while CE1 and CE2 are active-low. All three must be asserted simultaneously; omitting any one prevents memory access. This triple-enable scheme enables robust depth expansion in multi-SRAM systems.