Renesas 71V65803S133BQI8

Overview

71V65803S133BQI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, supporting 133 MHz operation (7.5 ns clock cycle), zero bus turnaround (ZBT) architecture, pipelined outputs, and 4-word burst capability. It features individual byte write control (BW1–BW4), three chip enables for depth expansion, and operates across industrial temperature (–40°C to +85°C).

For engineers reviewing the 71V65803S133BQI8 datasheet, 71V65803S133BQI8 pinout, 71V65803S133BQI8 application, or 71V65803S133BQI8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst mode sequencing (linear/interleaved via LBO), and industrial-grade thermal performance.

Technical Context

The 71V65803S133BQI8 implements a fully synchronous, clock-edge-triggered interface with address/control/data registers aligned to the rising edge of CLK. Its ZBT architecture eliminates dead cycles between read and write operations by enabling immediate bus direction reversal after completion of the current data transfer.

It integrates an on-chip burst counter controlled by ADV/LD and LBO, supporting both linear and interleaved 4-word burst sequences. Output enable (OE) remains asynchronous while all other inputs-including R/W, CEN, CE1/CE2/CE2, BWx, and ZZ-are synchronized to CLK, ensuring deterministic timing in high-speed pipelined systems.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout conforms to PKG100 configuration for 256K × 36 variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256P-133JCIN, the 71V65803S133BQI8 uniquely delivers selectable linear/interleaved burst modes and true ZBT operation-critical for maximizing bus efficiency in high-frequency packet processing and baseband applications where every clock cycle impacts throughput.

Availability

71V65803S133BQI8 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and industrial temperature assurance.

Supply support for 71V65803S133BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65803S133BQI8 belongs to Renesas' high-performance ZBT SRAM product line, engineered specifically for zero-latency memory interfaces in telecom infrastructure, networking equipment, and real-time industrial control systems.

FAQ

What is the memory organization and total capacity of the 71V65803S133BQI8?

The 71V65803S133BQI8 is configured as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This organization supports full 36-bit word access or granular 9-bit byte writes using BW1–BW4 enables. The device does not support the 512K × 18 configuration-only the 256K × 36 variant is implemented in the 71V65803S133BQI8 part number.

Does the 71V65803S133BQI8 support both linear and interleaved burst modes?

Yes, the 71V65803S133BQI8 supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, the burst follows linear order (A0, A1, A2, A3); when LBO = HIGH, it follows interleaved order (A0, A2, A1, A3). This dual-mode capability is confirmed in the functional timing diagrams and burst sequence tables of the official Renesas datasheet.

What is the role of the ZZ pin on the 71V65803S133BQI8, and how does it affect power consumption?

The ZZ pin on the 71V65803S133BQI8 is an asynchronous sleep mode input. When asserted HIGH, ZZ gates the internal clock and places the device in its lowest-power state while maintaining full data retention. In sleep mode, core and I/O power draw drops significantly-typical standby current is under 100 µA-making the 71V65803S133BQI8 suitable for power-sensitive industrial and telecom applications requiring rapid wake-up (<100 ns).

How many chip enable signals does the 71V65803S133BQI8 have, and what are their polarities?

The 71V65803S133BQI8 has three chip enable signals: CE1 and CE2 are active LOW, while CE2 is active HIGH. All three must be asserted simultaneously (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This triple-CE architecture enables flexible depth expansion and hierarchical memory decoding without external logic, and is explicitly defined in the pin description table and truth tables of the Renesas datasheet.

Is the 71V65803S133BQI8 pin-compatible with other members of the 71V65603/71V65803 family?

No-the 71V65803S133BQI8 is not pin-compatible with the 71V65603 series or other speed grades within the same family. While sharing the same PKG100 footprint and core signal set, pin assignments differ across variants (e.g., NC pins, I/O placement, and dedicated function pins vary between 256K×36 and 512K×18 configurations). The 71V65803S133BQI8 is specifically mapped to the 256K × 36 TQFP-100 layout per Renesas' PKG100 drawing 5304 drw 02.