Renesas 71V65803S133PFG

Overview

71V65803S133PFG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz maximum clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture enabling dead-cycle-free read/write transitions. It operates across industrial temperature (–40°C to +85°C) and supports pipelined burst reads/writes in networking line cards and high-speed packet buffers.

For engineers reviewing the 71V65803S133PFG datasheet, 71V65803S133PFG pinout, 71V65803S133PFG application, or 71V65803S133PFG equivalent, key selection criteria include its 100-pin TQFP package, synchronous 4-word burst capability (linear/interleaved), individual byte write control (BW1–BW4), and support for depth expansion via three chip enables - all critical for low-latency memory subsystems in telecom infrastructure.

Technical Context

The 71V65803S133PFG implements a fully pipelined synchronous interface with address/control/data registers triggered on the positive clock edge. Its ZBT™ architecture eliminates bus turnaround latency by allowing immediate read-after-write or write-after-read transitions without idle cycles.

It integrates an on-chip burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved 4-word burst sequences. Output enable (OE) is asynchronous, while all other inputs - including R/W, CEN, CE1/CE2/CE2, BWx, and CLK - are synchronous with strict setup/hold timing relative to the rising clock edge.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256A-133JCIN, the 71V65803S133PFG uniquely delivers zero-turnaround operation and integrated burst control in a single-ended, pin-compatible ZBT™ implementation - making it the optimal choice for legacy synchronous bus designs requiring deterministic low-latency memory access without architectural redesign.

Availability

71V65803S133PFG is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, and baseband processing subsystems requiring stable component supply, long-lifecycle support, and industrial-temperature reliability.

Supply support for 71V65803S133PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and memory solutions for automotive, industrial, and communications markets.

The 71V65803S133PFG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-performance networking and telecom infrastructure where deterministic latency, burst efficiency, and industrial-grade reliability are mandatory.

FAQ

What is the memory configuration and total capacity of the 71V65803S133PFG?

The 71V65803S133PFG is configured as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This organization supports 36-bit-wide data buses common in high-end networking ASICs and DSP-based systems, and is distinct from the 512K × 18 variant in the same family.

Does the 71V65803S133PFG support burst read and write operations, and how is burst order selected?

Yes, the 71V65803S133PFG supports 4-word synchronous burst operations for both reads and writes. Burst order - linear or interleaved - is selected via the static LBO pin: LBO = LOW selects linear, LBO = HIGH selects interleaved. The burst counter advances automatically on each rising CLK edge when ADV/LD = HIGH.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65803S133PFG?

The 71V65803S133PFG uses CE1 (active-low), CE2 (active-low), and CE2 (active-high) to provide flexible chip selection logic. All three must be asserted (CE1 = L, CE2 = L, CE2 = H) to enable the device. This arrangement allows hierarchical depth expansion and selective deselection without external gating logic.

How does the ZBTTM feature improve system performance in the 71V65803S133PFG?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S133PFG eliminates idle cycles between consecutive read and write operations. Unlike conventional SRAMs that require turnaround time, the 71V65803S133PFG permits immediate back-to-back accesses - significantly increasing effective bandwidth in burst-intensive applications like packet buffering.

What package type and pin count does the 71V65803S133PFG use, and is it RoHS-compliant?

The 71V65803S133PFG is supplied in a 100-pin plastic thin quad flatpack (TQFP) per JEDEC MO-140, measuring 14 mm × 20 mm. It is lead-free and RoHS-compliant, with markings indicating industrial temperature grade and Pb-free finish per manufacturer documentation.