Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 71V65803S133PFG8

Part No.:
71V65803S133PFG8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V65803S133PFG8.pdf
Description:
IC SRAM 9MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,207

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

71V65803S133PFG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture enabling dead-cycle-free read/write transitions. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic burst transfers.

For engineers reviewing the 71V65803S133PFG8 datasheet, 71V65803S133PFG8 pinout, 71V65803S133PFG8 application, or 71V65803S133PFG8 equivalent, key selection criteria include its 100-pin TQFP package, 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), pipelined output registers, and industrial temperature support (–40°C to +85°C).

Technical Context

The 71V65803S133PFG8 implements a fully synchronous, positive-edge-triggered architecture with address/control/data registered on CLK rising edge. Its ZBT™ feature eliminates bus turnaround latency by allowing immediate read-after-write or write-after-read transitions without idle cycles.

It integrates a 4-word burst counter controlled by ADV/LD and LBO pins, supports linear or interleaved burst sequences, and uses three chip enables (CE1, CE2, CE2) for depth expansion. Output enable (OE) is asynchronous, while all other inputs-including R/W, CEN, BWx, and ZZ-are synchronized to CLK except ZZ (asynchronous sleep mode).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization256K × 36-bit (9.4 Mbit); supports 512K × 18-bit via pin-compatible variant
Max Clock Frequency133 MHz; enables 7.5 ns cycle time for sustained high-throughput data buffering
Clock-to-Data Access3.8 ns typical; ensures minimal latency between address load and valid output data
Burst Capability4-word burst (interleaved or linear); reduces address overhead in sequential access patterns
Supply VoltageVDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; dual-rail I/O/core separation improves signal integrity
Operating Temperature–40°C to +85°C (industrial grade); validated for base station and industrial control environments
Package100-pin TQFP (14 mm × 20 mm, JEDEC standard); compatible with automated SMT assembly

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch and exposed thermal pad (PFG suffix). Pinout matches the 256K × 36 configuration per datasheet drawing 5304 drw 02.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit synchronous address bus; latched on rising CLK edge with ADV/LD low and chip enabled
CLKSystem Clock InputPositive-edge-triggered master timing reference; all synchronous operations referenced to this edge
R/WRead/Write ControlSynchronous signal determining cycle type; data transfer occurs two clocks later
ADV/LDBurst Counter ControlLoads new external address (low) or increments internal burst counter (high)
LBOBurst Order SelectStatic input selecting linear (LBO = low) or interleaved (LBO = high) 4-word burst sequence
BW1–BW4Byte Write EnablesFour independent active-low controls for 9-bit bytes; enables partial-word writes without masking logic
CE1, CE2, CE2Chip EnablesThree synchronous enables (CE1/CE2 low, CE2 high) for multi-chip depth expansion and deselection
ZZAsynchronous Sleep ModeGates internal CLK and reduces power consumption while retaining data; no timing constraints on assertion
I/O0–I/O31, I/OP1–I/OP4Data I/O Bus36-bit bidirectional synchronous data path; registered inputs/outputs eliminate external latch requirements

Key Features

FeatureDesign Value
ZBTTM ArchitectureEliminates dead cycles between read and write operations-enables continuous bus utilization in packet forwarding engines
Pipelined OutputsInternally registered outputs remove need for external output latches and simplify timing closure in high-speed designs
Individual Byte WriteFour dedicated BWx pins allow granular 9-bit writes-reduces bus contention and avoids full-word overwrite penalties
On-Chip Burst CounterHardware burst sequencing reduces address generation burden on controller; supports both linear and interleaved modes
Three Chip EnablesEnables seamless depth expansion across multiple devices without external decode logic or glue logic

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer memory interfacing directly to packet processor's parallel bus.

Use Value: 3.8 ns clock-to-data access and ZBT™ zero-turnaround enable sub-10 ns effective read/write switching-critical for wire-speed processing.

Use Scenario: Temporary storage of voice/video frames in TDM-over-IP gateways and SDH/SONET add-drop multiplexers.

IC Role / Device Role / Timing Role: Dual-port-like behavior via burst reads/writes synchronized to system clock domain.

Use Value: 4-word burst capability reduces address bus toggling by 75% per transfer-minimizing EMI and improving signal integrity on dense backplanes.

Industrial PLC Data CacheRadar Signal Processing Buffer

Use Scenario: Caching real-time sensor inputs and control outputs in programmable logic controllers operating in harsh environments.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory supporting cyclic executive firmware with fixed jitter bounds.

Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3V operation ensure reliability in uncooled enclosures without derating.

Use Scenario: Intermediate storage of digitized IF samples between ADC and FFT engine in phased-array radar front ends.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory buffer synchronizing to FPGA-controlled sampling clock.

Use Value: Pipelined outputs and registered I/O eliminate setup/hold violations at 133 MHz-enabling direct connection to high-speed FPGA I/O banks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1362KV18512K × 18-bit organization; same 133 MHz speed but narrower data bus; different pinout (119-ball BGA only)Requires PCB redesign for data bus width and package; suited for space-constrained designs where 18-bit interface sufficesSelect when board layout prioritizes density over data width and BGA assembly is available
AS7C3256A-133JCCommercial-grade (0°C to +70°C); no ZBT™ feature; 15 ns access time; 256K × 32-bit organizationLacks zero-turnaround and burst counter; higher latency limits use in real-time packet buffersAcceptable for non-real-time embedded caching where cost is primary constraint and temperature range is limited

Compared with CY7C1362KV18 and AS7C3256A-133JC, the 71V65803S133PFG8 uniquely delivers 36-bit width, ZBT™ architecture, and industrial temperature support in a manufacturable TQFP package-making it optimal for telecom infrastructure and ruggedized networking hardware where deterministic latency and reliability are non-negotiable.

Availability

71V65803S133PFG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data caching requiring stable component supply across extended product lifecycles.

Supply support for 71V65803S133PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65803 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-performance networking and telecom systems demanding zero-bus-turnaround, burst efficiency, and industrial-grade reliability.

FAQ

What is the memory organization and total capacity of the 71V65803S133PFG8?

The 71V65803S133PFG8 is configured as 256K × 36-bit, delivering 9,437,184 bits (9.4 Mbit) of synchronous SRAM. This organization supports 36-bit parallel data paths ideal for wide-bus network processors. The device shares pin compatibility with the 512K × 18-bit variant (71V65603), enabling flexible design reuse across bandwidth and density requirements. Both configurations operate identically in timing and control logic.

Does the 71V65803S133PFG8 support burst read and write operations, and how is burst order controlled?

Yes, the 71V65803S133PFG8 supports 4-word burst operations for both reads and writes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = low enables linear addressing (A0, A1, A2, A3), while LBO = high selects interleaved order (A0, A2, A1, A3). The burst counter advances automatically on each CLK rising edge when ADV/LD is high, eliminating software overhead for address incrementing during sequential access.

How does the ZBTTM (Zero Bus Turnaround) feature improve system performance in the 71V65803S133PFG8?

The ZBTTM feature in the 71V65803S133PFG8 eliminates mandatory idle cycles when switching between read and write operations. Unlike conventional SRAMs requiring bus stabilization time, the 71V65803S133PFG8 allows immediate transition-e.g., a write cycle at clock n can be followed by a read at clock n+1 with no dead cycle. This increases effective bus utilization by up to 25% in mixed-access workloads like packet header modification and forwarding.

What are the power supply requirements and thermal specifications for the 71V65803S133PFG8?

The 71V65803S133PFG8 requires two 3.3 V supplies: VDD (core, 3.135–3.465 V) and VDDQ (I/O, 3.135–3.465 V), each tolerant of ±5% variation. It operates across –40°C to +85°C (industrial grade) and supports asynchronous sleep mode via the ZZ pin, reducing power consumption while maintaining data retention. Absolute maximum ratings limit terminal voltage to –0.5 V to VDDQ +0.5 V and power dissipation to 2.0 W.

Can the 71V65803S133PFG8 be used with a 100-pin TQFP footprint, and are there alternate packages available?

Yes, the 71V65803S133PFG8 is explicitly packaged in a 100-pin TQFP (PFG suffix), measuring 14 mm × 20 mm with 0.5 mm pitch and JEDEC-compliant pinout. Alternate packages include 119-ball BGA (BG119) and 165-fine-pitch BGA (BQ165), but these require separate part numbers and PCB redesign. The PFG variant is optimized for ease of prototyping, rework, and high-volume SMT assembly without requiring microvia or buried trace routing.

71V65803S133PFG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
9Mbit
Memory Organization:
512K x 18
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V65803S133PFG8 FAQ

1.How can I place an order for 71V65803S133PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65803S133PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65803S133PFG8 reliable?

The price and inventory of 71V65803S133PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S133PFG8 is usually 5 days.

3.What payment methods are accepted for 71V65803S133PFG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65803S133PFG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V65803S133PFG8?

71V65803S133PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65803S133PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65803S133PFG8?

For technical support, including 71V65803S133PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S133PFG8 requirements.

6.How does Aetrix verify that 71V65803S133PFG8 is sourced from the original manufacturer or authorized distributors?

All 71V65803S133PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S133PFG8 meets industry standards.

7.What is the process for return or replacement of 71V65803S133PFG8?

All 71V65803S133PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S133PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65803S133PFG8 part is unused and in its original packaging.

Return procedure for 71V65803S133PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71V65803S133PFG8 Tags

  • 71V65803S133PFG8
  • 71V65803S133PFG8 PDF
  • 71V65803S133PFG8 Datasheet
  • 71V65803S133PFG8 Specifications
  • 71V65803S133PFG8 Images
  • Renesas
  • Renesas 71V65803S133PFG8
  • Buy 71V65803S133PFG8
  • 71V65803S133PFG8 Price
  • 71V65803S133PFG8 Distributor
  • 71V65803S133PFG8 Supplier
  • 71V65803S133PFG8 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER