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Renesas 71V65803S133PFGI
- Part No.:
- 71V65803S133PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V65803S133PFGI.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,184
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Product details
Overview
71V65803S133PFGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock frequency (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs. It supports 4-word burst (linear/interleaved), individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-speed networking buffers and packet-switching ASIC/FPGA interfaces.
For engineers reviewing the 71V65803S133PFGI datasheet, 71V65803S133PFGI pinout, 71V65803S133PFGI application, or 71V65803S133PFGI equivalent, key selection criteria include ZBT™ timing compatibility, TQFP-100 package footprint, 3.3V I/O and core supply, burst counter behavior, and industrial-grade thermal performance.
Technical Context
The 71V65803S133PFGI implements a fully synchronous, clock-edge-triggered interface with address/control/data registers sampled on the rising CLK edge. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.
It features three chip enables (CE1, CE2 active-low; CE2 active-high), asynchronous OE and ZZ inputs, and static LBO pin selecting linear or interleaved burst order. Output enable is asynchronous; all other signals-including R/W, CEN, BWx, and ADV/LD-are synchronous with setup/hold timing referenced to CLK.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.4 Mbit); supports depth expansion via CE pins |
| Clock Frequency | 133 MHz (7.5 ns cycle time); enables 150 MHz system-level operation per spec |
| Access Time | 3.8 ns clock-to-data (tCD) for pipelined output; deterministic latency for real-time buffering |
| Supply Voltage | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling |
| Burst Capability | 4-word burst (linear or interleaved); LBO pin selects sequence; reduces address bus traffic by 75% |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for telecom and industrial control environments |
| Power Management | ZZ input enables sleep mode with data retention; CEN suspends clock propagation without state loss |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout conforms to PKG100 configuration for 256K × 36 variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK when ADV/LD = LOW and chip enabled |
| CLK | Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this edge |
| R/W | Read/Write Control | Synchronous signal defining load-cycle access type; data transfer occurs two cycles later |
| ADV/LD | Advance Burst / Load Address | Controls burst counter (HIGH) or loads new external address (LOW); determines burst initiation |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst sequence; must remain stable during operation |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 low, CE2 high) for depth expansion and deselection control |
| BW1–BW4 | Byte Write Enables | Four active-low signals enabling 9-bit byte writes; allows partial-word updates without masking logic |
| OE | Output Enable | Asynchronous; tri-states outputs when HIGH; may be tied LOW for simplified read-only use |
| ZZ | Sleep Mode | Asynchronous; gates internal CLK and reduces power; retains memory contents |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing predictability |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates bus turnaround dead cycles between reads and writes-enables continuous data streaming in switch fabric applications |
| Pipelined Outputs | Internally synchronized output buffer enable removes need for external OE timing control-simplifies PCB layout and timing closure |
| 4-Word Burst Counter | Reduces address bus activity by 75% per burst; LBO pin configures linear/interleaved order for cache-line alignment |
| Individual Byte Write | Four dedicated BWx pins allow selective 9-bit writes-avoids full-word read-modify-write overhead in protocol processing |
| Three Chip Enables | Supports seamless depth expansion across multiple devices without external decoding logic-reduces BOM count in large buffer designs |
Applications
| High-Speed Network Switch Buffer | Telecom Line Card Packet Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly with MAC or switch fabric ASICs using synchronous burst transfers. Use Value: ZBT™ zero-turnaround enables back-to-back read/write operations at 133 MHz-maximizing throughput in cut-through switching architectures. | Use Scenario: Temporary storage of ATM or SONET frame data in carrier-grade line cards requiring deterministic latency. IC Role / Device Role / Timing Role: Synchronous SRAM acting as frame buffer between framer IC and DSP/FPGA, operating under strict jitter and timing budgets. Use Value: Pipelined outputs and 3.8 ns tCD guarantee sub-4 ns data availability-meeting <10 ns jitter tolerance requirements for OC-48 systems. |
| FPGA-Based Protocol Accelerator | Industrial Real-Time Controller Cache |
Use Scenario: Offloading TCP/IP checksum, encryption, or header parsing tasks in FPGA-accelerated edge servers. IC Role / Device Role / Timing Role: Local memory for FPGA soft-core processors performing packet inspection with burst-aligned data access. Use Value: 4-word burst and individual byte write support enable efficient handling of variable-length protocol fields-reducing FPGA logic utilization by ~22% versus non-burst alternatives. | Use Scenario: Storing motion control trajectory tables and sensor fusion buffers in servo drives operating in harsh factory environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing deterministic access to real-time control algorithms running on dual-core microcontrollers. Use Value: –40°C to +85°C rating and ZZ sleep mode ensure reliable operation during thermal cycling and power-loss recovery sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133BGXI | 133 MHz, 256K × 36, 3.3V QDR SRAM; different burst architecture (QDR vs ZBT), no ADV/LD pin | Requires QDR-compatible controller; not drop-in for ZBT™-specific timing sequences | Select only if migrating to QDR interface and redesigning controller logic |
| AS7C3256A-133JCIN | 133 MHz, 256K × 36, 3.3V sync SRAM; lacks ZBT™ zero-turnaround, no burst counter or LBO pin | Needs external OE management and address sequencing logic; higher latency between read/write transitions | Use where cost sensitivity outweighs ZBT™ performance benefits and controller has burst generation capability |
Compared with CY7C1362BV33-133BGXI and AS7C3256A-133JCIN, the 71V65803S133PFGI uniquely delivers zero bus turnaround, integrated burst counter, and ADV/LD-controlled address flow-enabling simpler controller design and higher effective bandwidth in burst-intensive applications.
Availability
71V65803S133PFGI is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and FPGA-based protocol accelerators requiring stable component supply and industrial temperature compliance.
Supply support for 71V65803S133PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V65803S133PFGI belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for high-throughput, low-latency buffering in networking, telecommunications, and real-time embedded systems.
FAQ
What is the memory organization and density of the 71V65803S133PFGI?
The 71V65803S133PFGI is organized as 256K × 36 bits, delivering 9,437,184 total bits (9.4 Mbit) of synchronous SRAM. This configuration supports 36-bit data width with 18 address lines (A0–A17), and is distinct from the 512K × 18 variant in the same family. The device uses a ZBT™ architecture optimized for burst-mode operation in high-speed interfaces.
Does the 71V65803S133PFGI support burst read and write operations?
Yes, the 71V65803S133PFGI supports 4-word synchronous burst operations in both read and write modes. Burst sequence order-linear or interleaved-is selected via the static LBO pin. Burst initiation and address advancement are controlled by the ADV/LD signal, and the internal counter ensures deterministic 4-cycle data transfers without external address generation.
What package type and pin count does the 71V65803S133PFGI use?
The 71V65803S133PFGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), designated PKG100. Its 14 mm × 20 mm body with 0.5 mm pitch is compatible with standard surface-mount assembly processes and matches the pinout defined for the 256K × 36 configuration in Renesas' datasheet revision 6.42.
How does the ZBTTM feature improve system performance in the 71V65803S133PFGI?
The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S133PFGI eliminates idle cycles when switching between read and write operations. By overlapping bus control and data phases through pipelined registers and internal burst logic, it enables back-to-back accesses-increasing effective bandwidth by up to 30% in burst-intensive applications like packet buffering compared to conventional synchronous SRAMs.
What are the voltage and temperature specifications for the 71V65803S133PFGI?
The 71V65803S133PFGI operates with VDD = 3.3 V ±5% (core) and VDDQ = 3.3 V ±5% (I/O), supporting industrial temperature range from –40°C to +85°C. These specs are validated per Renesas' recommended DC operating conditions and absolute maximum ratings tables, ensuring reliability in telecom and industrial control environments without derating.
71V65803S133PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V65803S133PFGI FAQ
1.How can I place an order for 71V65803S133PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65803S133PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65803S133PFGI reliable?
The price and inventory of 71V65803S133PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S133PFGI is usually 5 days.
3.What payment methods are accepted for 71V65803S133PFGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65803S133PFGI transactions.
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4.How is shipping managed for 71V65803S133PFGI?
71V65803S133PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65803S133PFGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65803S133PFGI?
For technical support, including 71V65803S133PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S133PFGI requirements.
6.How does Aetrix verify that 71V65803S133PFGI is sourced from the original manufacturer or authorized distributors?
All 71V65803S133PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S133PFGI meets industry standards.
7.What is the process for return or replacement of 71V65803S133PFGI?
All 71V65803S133PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S133PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65803S133PFGI part is unused and in its original packaging.
Return procedure for 71V65803S133PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65803S133PFGI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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