Renesas 71V65803S133PFGI8

Overview

71V65803S133PFGI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock speed (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes, individual byte write control (BW1–BW4), and operates across –40°C to +85°C for industrial applications such as high-speed packet buffering in network switches.

For engineers reviewing the 71V65803S133PFGI8 datasheet, 71V65803S133PFGI8 pinout, 71V65803S133PFGI8 application, or 71V65803S133PFGI8 equivalent, this device delivers deterministic 2-cycle read/write latency, asynchronous OE and ZZ control, JEDEC-standard 100-pin TQFP packaging, and compatibility with high-performance backplane and memory controller designs requiring dead-cycle-free bus transitions.

Technical Context

The 71V65803S133PFGI8 implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers sampled on the rising CLK edge. Its ZBT™ feature eliminates bus turnaround delay by enabling immediate read-after-write or write-after-read transitions without idle cycles.

It integrates an on-chip burst counter, linear/interleaved burst sequencing controlled by LBO, and three chip enables (CE1, CE2, CE2) supporting depth expansion. Output enable (OE) is asynchronous, while sleep mode (ZZ) gates CLK internally to reduce power consumption with guaranteed data retention.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, lead pitch 0.5 mm. Pinout validated per Renesas IDT71V65803 PKG100 schematic (Rev. 6.42, Nov. 2021).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256A-133JCIN, the 71V65803S133PFGI8 uniquely delivers zero bus turnaround, integrated burst sequencing, and asynchronous ZZ/OE - making it optimal for latency-constrained, bus-efficient embedded memory subsystems where deterministic 2-cycle latency is mandatory.

Availability

71V65803S133PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed test equipment requiring stable component supply, long-term industrial-grade availability, and RoHS-compliant green packaging.

Supply support for 71V65803S133PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S133PFGI8 belongs to Renesas' legacy IDT ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency data buffering in communications infrastructure where bus efficiency and deterministic timing are critical.

FAQ

What is the memory organization and total bit capacity of the 71V65803S133PFGI8?

The 71V65803S133PFGI8 is configured as 256K × 36-bit, delivering a total capacity of 9,437,184 bits (9 Megabits). This organization supports both 36-bit wide data paths and reconfigurable 512K × 18-bit operation, enabling flexible integration into varying bus-width architectures while maintaining full addressability.

Does the 71V65803S133PFGI8 support true zero bus turnaround (ZBT™), and how is it implemented?

Yes, the 71V65803S133PFGI8 implements true ZBT™ functionality: it eliminates dead cycles between consecutive read and write operations by allowing immediate bus direction reversal. This is achieved via internal synchronization of output buffers and pipelined control logic - no external OE timing management is required, and the feature is inherent to the device's architecture.

What package type and pin count does the 71V65803S133PFGI8 use, and is it JEDEC-compliant?

The 71V65803S133PFGI8 is supplied in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), measuring 14 mm × 20 mm with 0.5 mm lead pitch. This package is fully compliant with JESD-22 and J-STD-020 standards, and its pinout matches the IDT71V65803 PKG100 specification (Rev. 6.42), ensuring mechanical and electrical interoperability with existing socket and layout designs.

How does the burst counter and LBO pin function in the 71V65803S133PFGI8?

The 71V65803S133PFGI8 features an on-chip 4-word burst counter controlled by the ADV/LD and LBO pins. When ADV/LD = HIGH, the counter increments; when ADV/LD = LOW, an external address is loaded. LBO selects burst order: LOW = linear (A0, A1, A2, A3), HIGH = interleaved (A0, A2, A1, A3) - enabling optimized access patterns for cache-line or DMA-aligned transfers.

What are the key power supply requirements and thermal specifications for the 71V65803S133PFGI8?

The 71V65803S133PFGI8 requires two 3.3 V supplies: VDD (core, ±5%) and VDDQ (I/O, ±5%), with dedicated VSS returns. It operates across –40°C to +85°C (industrial grade), supports asynchronous sleep mode via ZZ input, and guarantees data retention during sleep. Absolute max ratings include VTERM ≤ +4.6 V and PT ≤ 2.0 W.