Renesas 71V65803S150BG

Overview

71V65803S150BG from Renesas Electronics is a 3.3V, 9,437,184-bit (9 Mbit) synchronous ZBT™ SRAM with 256K × 36 memory configuration, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature range (–40°C to +85°C) in a 119-ball BGA package - used in high-speed network packet buffers and telecom line-card data path acceleration.

For engineers reviewing the 71V65803S150BG datasheet, 71V65803S150BG pinout, 71V65803S150BG application, or 71V65803S150BG equivalent, key selection criteria include ZBT™ bus efficiency, 3.3V I/O compatibility, synchronous burst control via ADV/LD and LBO, individual byte write (BW1–BW4), and support for depth expansion using three chip enables (CE1, CE2, CE2).

Technical Context

The 71V65803S150BG implements a fully synchronous, pipelined SRAM architecture where address/control registration occurs on the rising CLK edge, with data output valid two cycles later. Its ZBT™ feature eliminates dead cycles between read/write transitions by internally synchronizing output buffer enable - removing external OE timing constraints.

Burst operation is managed by an on-chip counter controlled by ADV/LD (load new address or increment counter) and LBO (linear vs. interleaved sequence). Write operations support full-word or per-byte granularity via BW1–BW4, and power-down is enabled asynchronously via ZZ input, guaranteeing data retention during sleep mode.

Key Specifications

Pinout & Package

71V65803S150BG is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), 12 mm × 12 mm body, 0.8 mm ball pitch. Pin functions are validated per Renesas datasheet revision Nov.12.21.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and AS7C3256B-15JCN, the 71V65803S150BG uniquely delivers ZBT™ zero-turnaround and synchronous 4-word burst in a 256K × 36 configuration - making it optimal for high-efficiency packet buffering where bus utilization and deterministic latency dominate over raw peak bandwidth.

Availability

71V65803S150BG is available at Aetrix Electronics and suitable for network packet buffering, telecom line-card data path acceleration, industrial PLC data caching, and avionics telemetry recording requiring stable component supply and long-term industrial temperature support.

Supply support for 71V65803S150BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S150BG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency data buffering in networking, telecom, and real-time control systems demanding zero bus turnaround and deterministic burst access.

FAQ

What is the memory organization and total capacity of the 71V65803S150BG?

The 71V65803S150BG is organized as 256K × 36, delivering 9,437,184 bits (9 Mbit) of synchronous SRAM. It uses an 18-bit address bus (A0–A17) and a 36-bit data bus (I/O0–I/O31 plus I/OP1–I/OP4), supporting byte-wide writes via four independent BWx signals. This configuration targets high-bandwidth, word-aligned data buffering in telecom and networking hardware.

Does the 71V65803S150BG support burst read and write operations, and how is burst order controlled?

Yes, the 71V65803S150BG supports 4-word synchronous burst reads and writes. Burst order is selected via the LBO pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The ADV/LD pin controls whether a new external address is loaded (LOW) or the internal burst counter is advanced (HIGH), enabling seamless burst chaining without CPU intervention.

What is the role of the ZZ pin on the 71V65803S150BG, and does it retain data during sleep mode?

The ZZ pin on the 71V65803S150BG is an asynchronous sleep mode input. When asserted HIGH, it gates the internal clock and reduces power consumption to its minimum level while guaranteeing full data retention. This feature allows the 71V65803S150BG to maintain stored packet or control data during system idle periods or brownout conditions - critical for avionics and industrial applications requiring nonvolatile buffering without external backup power.

How does the ZBT™ (Zero Bus Turnaround) feature improve system performance in the 71V65803S150BG?

The ZBT™ feature in the 71V65803S150BG eliminates dead cycles between consecutive read and write operations by internally synchronizing output buffer enable. Unlike conventional SRAMs requiring explicit OE deassertion/reassertion, the 71V65803S150BG transitions instantly between read and write bursts - increasing effective bus utilization by up to 25% in mixed-access workloads such as packet header modification and payload streaming.

What package type and pin count does the 71V65803S150BG use, and is it RoHS-compliant?

The 71V65803S150BG uses a 119-ball fine-pitch BGA (BGG119) package with 0.8 mm ball pitch and 12 mm × 12 mm body size. It is RoHS-compliant and qualifies as a "green part" per Renesas' ordering information. The pinout matches JEDEC standard BG119 layout, and thermal/mechanical design guidelines are provided in the official datasheet revision Nov.12.21.