Renesas 71V65803S150BG8

Overview

71V65803S150BG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround (ZBT) architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature (–40°C to +85°C). It is used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the 71V65803S150BG8 datasheet, 71V65803S150BG8 pinout, 71V65803S150BG8 application, or 71V65803S150BG8 equivalent, key selection criteria include ZBT timing compliance, 3.3V I/O compatibility, TQFP-100 or BGA-119 package fit, burst counter control via ADV/LD and LBO, and industrial-grade thermal reliability.

Technical Context

The 71V65803S150BG8 implements a fully synchronous, positive-edge-triggered interface with registered address, control, and data paths. Its ZBT architecture eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal memory access.

It features an on-chip 4-word burst counter controlled by ADV/LD (load/advance) and LBO (linear/interleaved order), three chip enables (CE1, CE2, CE2) for depth expansion, individual byte write enables (BW1–BW4), and asynchronous sleep mode (ZZ) and output enable (OE).

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 119-ball BGA (BG119), or 165-fine-pitch BGA (BQ165). The 71V65803S150BG8 uses the BG119 variant (119-ball grid array) with 1.0 mm ball pitch and 12 mm × 12 mm body size.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18-167BZI and AS7C3316PFS-15KIN, the 71V65803S150BG8 uniquely delivers ZBT timing and integrated burst control in a single 256K×36 device-reducing controller complexity and improving efficiency in sequential-access buffering applications.

Availability

71V65803S150BG8 is available at Aetrix Electronics and suitable for high-speed network switching, telecom line card design, and industrial data acquisition requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V65803S150BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S150BG8 belongs to Renesas' high-performance ZBT SRAM product line, engineered specifically for bandwidth-critical buffering in networking, telecom, and real-time embedded systems where zero bus turnaround and deterministic burst access are essential.

FAQ

What memory configuration does the 71V65803S150BG8 support?

The 71V65803S150BG8 supports a 256K × 36-bit organization (9.44 Mbit), and can be configured as 512K × 18-bit via pin strapping. This dual-configuration flexibility allows system designers to optimize data bus width and density without changing the core SRAM architecture. Both configurations retain full ZBT functionality, 150 MHz operation, and identical timing parameters.

How does the ZBTTM feature improve performance in the 71V65803S150BG8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S150BG8 eliminates idle cycles when switching between read and write operations. Unlike conventional SSRAMs that require bus stabilization time, the 71V65803S150BG8 pipelines the transition-allowing back-to-back accesses with no dead cycles. This maintains full 150 MHz throughput in mixed-access workloads typical of packet buffering and real-time streaming.

What is the function of the ADV/LD and LBO pins on the 71V65803S150BG8?

On the 71V65803S150BG8, ADV/LD is a synchronous control pin: low loads a new external address, high advances the internal 4-word burst counter. LBO is a static input selecting burst order-low enables linear (0,1,2,3), high enables interleaved (0,2,1,3). Together, they eliminate external burst address generation logic and let the 71V65803S150BG8 autonomously manage sequential memory access.

Does the 71V65803S150BG8 support partial-word writes?

Yes, the 71V65803S150BG8 supports partial-word writes via four independent byte write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus. When a BWx pin is asserted low during a write cycle, only its corresponding byte is updated; others retain prior data. This avoids read-modify-write sequences and reduces controller overhead in applications like header editing or metadata insertion.

What package and pin count does the 71V65803S150BG8 use?

The 71V65803S150BG8 uses the BG119 package: a 119-ball fine-pitch ball grid array with 1.0 mm pitch and 12 mm × 12 mm body size. It is JEDEC-compliant and compatible with standard reflow profiles. This package offers superior thermal dissipation and signal integrity over TQFP alternatives-critical for sustained 150 MHz operation in dense networking PCB layouts.