Renesas 71V65803S150BGI

Overview

71V65803S150BGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround (ZBT) architecture, and pipelined outputs - designed for high-bandwidth memory subsystems in network switches, packet buffers, and real-time DSP systems.

For engineers reviewing the 71V65803S150BGI datasheet, 71V65803S150BGI pinout, 71V65803S150BGI application, or 71V65803S150BGI equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP packaging with 3.3V I/O and core supply.

Technical Context

The 71V65803S150BGI implements a fully synchronous, positive-edge-triggered interface with registered address, data, and control inputs. Its ZBT™ architecture eliminates dead cycles between read/write transitions by enabling immediate bus turnaround via internal burst counter and ADV/LD-controlled address sequencing.

It supports 4-word burst operations (linear or interleaved via LBO pin), pipelined output registers synchronized to CLK, and asynchronous OE/ZZ controls for output disable and sleep mode. All synchronous signals - including R/W, CEN, CE1/CE2/CE2, and BWx - are sampled on the rising edge of CLK with setup/hold timing referenced to that edge.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pinout validated per Renesas datasheet revision Nov.12.21 (PKG100 configuration for 256K × 36).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and AS7C3256A-15JC, the 71V65803S150BGI delivers deterministic 150 MHz ZBT™ performance with industrial temperature support and full 4-word burst capability - making it optimal for latency-critical, high-throughput memory buffering where bus efficiency and thermal robustness are primary design constraints.

Availability

71V65803S150BGI is available at Aetrix Electronics and suitable for network packet buffering, real-time DSP data exchange, and industrial PLC memory caching requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 71V65803S150BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65803S150BGI belongs to Renesas' high-speed ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in telecom infrastructure, enterprise networking, and real-time embedded control applications.

FAQ

What is the maximum operating frequency of the 71V65803S150BGI?

The 71V65803S150BGI is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period and 3.8 ns clock-to-data access time. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The 71V65803S150BGI achieves this performance using a high-speed CMOS process and fully registered synchronous interface with pipelined outputs.

Does the 71V65803S150BGI support both linear and interleaved burst modes?

Yes, the 71V65803S150BGI supports both linear and interleaved 4-word burst sequences, selected via the static LBO (Linear Burst Order) pin: LBO = LOW configures linear order (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). This flexibility allows optimization for sequential data streams or cache-line-aligned access patterns. The 71V65803S150BGI's burst counter advances automatically on each rising CLK edge when ADV/LD = HIGH.

How does the ZBT™ feature eliminate dead cycles in the 71V65803S150BGI?

The ZBT™ (Zero Bus Turnaround) feature in the 71V65803S150BGI removes idle bus cycles between consecutive read and write operations by allowing immediate direction reversal without wait states. It achieves this through internal synchronization of address/control latching and output enable, combined with pipelined data paths. The 71V65803S150BGI guarantees no dead cycles even during mixed read-write bursts - a key advantage over standard synchronous SRAMs requiring explicit bus turnaround delays.

What package options are available for the 71V65803S150BGI?

The 71V65803S150BGI is offered in three JEDEC-standard packages: 100-pin TQFP (14 mm × 20 mm), 119-ball BGA, and 165-fine-pitch BGA. The "BGI" suffix in the part number explicitly denotes the 100-pin TQFP industrial-grade variant. All packages support the same 256K × 36 configuration and electrical specifications, though layout and thermal characteristics differ - the TQFP version provides ease of prototyping and rework, while BGA variants offer higher density and improved signal integrity.

Can the 71V65803S150BGI operate with separate core and I/O voltage supplies?

Yes, the 71V65803S150BGI uses dual-supply architecture: VDD (3.3 V ±5%) powers the core logic and address/control circuitry, while VDDQ (3.3 V ±5%) independently powers the 36-bit I/O buffer bank. This separation minimizes noise coupling between logic and data paths, improves signal integrity, and allows independent power sequencing. The 71V65803S150BGI specifies strict voltage tolerances and absolute maximum ratings for both rails, with VIH/VIL thresholds referenced to their respective supplies.