Renesas 71V65803S150BGI8

Overview

71V65803S150BGI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst read/write capability. It operates across industrial temperature (–40°C to +85°C), supports interleaved/linear 4-word bursts, and features individual byte write control for high-throughput memory subsystems in network packet buffers and telecom switching fabric.

For engineers reviewing the 71V65803S150BGI8 datasheet, 71V65803S150BGI8 pinout, 71V65803S150BGI8 application, or 71V65803S150BGI8 equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP-100 package mapping, ZBT™-specific burst sequencing behavior, and validated alternatives for high-speed synchronous SRAM replacement in latency-critical embedded systems.

Technical Context

The 71V65803S150BGI8 implements a fully synchronous, pipelined interface with address/control registration on the rising CLK edge, two-cycle data latency, and internally synchronized output buffer enable-eliminating external OE timing constraints. Its ZBT™ architecture removes dead cycles between consecutive reads and writes by decoupling bus direction control from data transfer timing.

Burst operation is managed via ADV/LD and LBO inputs: ADV/LD loads new addresses or advances the internal counter, while LBO selects linear or interleaved 4-word sequences. Three chip enables (CE1, CE2, CE2) support depth expansion, and ZZ enables asynchronous sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 1 marked via corner notch; top-side marking includes "71V65803S150BGI8" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and AS7C3256P-15TIN, the 71V65803S150BGI8 uniquely balances 150 MHz ZBT™ performance, industrial temperature reliability, and low-power ZZ sleep-making it optimal for new telecom infrastructure and embedded signal processing designs where deterministic latency and thermal robustness are mandatory.

Availability

71V65803S150BGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric, and baseband processing applications requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for 71V65803S150BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65803S150BGI8 belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking equipment, telecom infrastructure, and real-time signal processing systems.

FAQ

What is the maximum supported clock frequency for the 71V65803S150BGI8?

The 71V65803S150BGI8 is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply voltage. The 3.8 ns clock-to-data access time (tCD) is measured under these conditions and defines the minimum latency from CLK rise to valid output data.

Does the 71V65803S150BGI8 support both 256K × 36 and 512K × 18 configurations?

Yes, the 71V65803S150BGI8 supports both memory organizations. The 256K × 36 configuration uses A0–A17 (18 address bits), while the 512K × 18 variant uses A0–A18 (19 address bits) and maps data across I/O0–I/O15 and I/OP1–I/OP2. Configuration is determined by pin strapping and address decoding-not by internal register settings-and is fixed per device revision.

How does the ZBTTM feature eliminate dead cycles in the 71V65803S150BGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65803S150BGI8 eliminates dead cycles by decoupling bus direction control from data transfer timing. Unlike conventional SRAMs that require explicit bus turnaround cycles, the 71V65803S150BGI8 allows immediate transition from a write burst to a read burst (or vice versa) without inserting idle clocks-enabling back-to-back operations at full 150 MHz throughput.

What is the function of the ADV/LD and LBO pins on the 71V65803S150BGI8?

On the 71V65803S150BGI8, ADV/LD controls burst addressing: sampled LOW at CLK rise, it loads a new external address; sampled HIGH, it advances the internal burst counter. LBO selects burst order-LOW enables linear sequence (0,1,2,3), HIGH enables interleaved (0,2,1,3). Both are static inputs and must remain stable during burst execution.

Can the 71V65803S150BGI8 operate in low-power mode, and how is it controlled?

Yes, the 71V65803S150BGI8 supports low-power operation via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated and core logic enters sleep mode, reducing ICC to less than 10 µA while guaranteeing full data retention. No clock or command sequence is required-entry and exit are immediate and transparent to ongoing memory state.