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Renesas 71V65803S150BQ
- Part No.:
- 71V65803S150BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V65803S150BQ.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,811
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Product details
Overview
71V65803S150BQ from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture. It supports pipelined burst reads/writes in linear or interleaved mode and operates across industrial temperature range (–40°C to +85°C), targeting high-speed packet buffering in network switches and telecom line cards.
For engineers reviewing the 71V65803S150BQ datasheet, 71V65803S150BQ pinout, 71V65803S150BQ application, or 71V65803S150BQ equivalent, key selection criteria include ZBT timing compliance, 100-pin TQFP package compatibility, 3.3V I/O and core supply requirements, and support for individual byte write control (BW1–BW4) in burst-mode memory subsystems.
Technical Context
The 71V65803S150BQ implements a fully synchronous, rising-edge-triggered interface with registered address, data, and control inputs. Its internal burst counter advances on ADV/LD = HIGH and supports four-word bursts with LBO-selectable linear or interleaved sequences.
ZBT operation eliminates dead cycles between read/write transitions via internally synchronized output buffer enable and pipelined outputs - data valid two clocks after address/control registration. Clock Enable (CEN) suspends all synchronous activity while preserving register state, and asynchronous ZZ input enables low-power sleep mode with guaranteed data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.44 Mbit); supports depth expansion via three chip enables (CE1, CE2, CE2) |
| Clock Frequency | 150 MHz; enables 6.67 ns clock period for high-throughput memory access in real-time systems |
| Access Time | 3.8 ns clock-to-data (tCD); ensures deterministic latency for time-critical buffering applications |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core and I/O rails reduce noise coupling |
| Burst Capability | 4-word burst (linear/interleaved); reduces address bus traffic and improves bandwidth efficiency |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded networking equipment |
| Power Management | Asynchronous ZZ sleep mode; gates internal clock and minimizes active power during idle periods |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch and exposed thermal pad (PKG100).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; registers on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this signal |
| R/W | Read/Write Control | Synchronous command signal; determines cycle type (read/write) at load time; data transfers occur two cycles later |
| ADV/LD | Burst Counter Control | Loads new external address (LOW) or increments internal burst counter (HIGH); defines burst sequence start point |
| LBO | Burst Order Select | Static input selecting linear (LOW) or interleaved (HIGH) 4-word burst addressing pattern |
| BW1–BW4 | Byte Write Enables | Four independent active-low signals enabling 9-bit byte writes; allows partial-word updates without masking logic |
| CE1, CE2, CE2 | Chip Enables | Three synchronous enables (CE1/CE2 active LOW, CE2 active HIGH); support depth expansion and hierarchical memory decoding |
| OE | Output Enable | Asynchronous control; tri-states outputs when HIGH; may be tied LOW for simplified read-only operation |
| ZZ | Sleep Mode Input | Asynchronous entry to low-power mode; gates internal clock and reduces ICC to standby level while retaining data |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered inputs/outputs eliminate external latch requirements |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates bus turnaround dead cycles between consecutive reads and writes, enabling continuous 150 MHz throughput without inter-cycle gaps |
| Pipelined Outputs | Internally synchronized OE eliminates need for external timing control; outputs remain stable across clock edges |
| 4-Word Burst Mode | Single address initiates four sequential data transfers; reduces address bus overhead by 75% per burst transaction |
| Individual Byte Write | Four dedicated BWx pins allow selective 9-bit writes; avoids full-word read-modify-write sequences in partial-update scenarios |
| Three Chip Enables | Supports seamless depth expansion across multiple devices using standard CE logic without external decode complexity |
Applications
| Packet Buffering in Switch ASICs | Line Card Memory Subsystem |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in multi-gigabit switch fabric ASICs requiring deterministic latency and zero-turnaround burst access. IC Role / Device Role / Timing Role: High-speed SRAM acting as first-level packet buffer with pipelined ZBT interface synchronized to switch fabric clock domain. Use Value: 3.8 ns tCD and 150 MHz operation enable sub-10 ns per-packet memory access, supporting 10 Gbps+ line rates without backpressure. | Use Scenario: Providing shared memory for control-plane processors and data-path accelerators on telecom line cards with strict thermal and space constraints. IC Role / Device Role / Timing Role: Dual-port-capable synchronous SRAM serving as unified buffer for packet classification, QoS lookup, and statistics aggregation engines. Use Value: Industrial temperature rating (–40°C to +85°C) and 100-pin TQFP package ensure reliability in convection-cooled chassis environments. |
| Real-Time Protocol Stack Buffering | High-Speed Test Equipment Memory |
Use Scenario: Temporarily storing time-stamped sensor data and protocol headers in industrial Ethernet gateways implementing PROFINET or EtherCAT. IC Role / Device Role / Timing Role: Deterministic-access memory buffer interfacing directly to FPGA-based protocol engines with minimal glue logic. Use Value: Synchronous CEN and ZZ controls allow precise power gating and clock suspension during protocol idle intervals, reducing average system power. | Use Scenario: Capturing high-fidelity digital waveforms in automated test equipment (ATE) where deep memory depth and nanosecond-level timing accuracy are critical. IC Role / Device Role / Timing Role: High-bandwidth capture memory operating at 150 MHz sampling-equivalent rate with burst-aligned data streaming to host controller. Use Value: 4-word burst mode and linear/interleaved addressing support efficient DMA transfers to PCIe-based acquisition controllers without CPU intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV18 | 512K × 18-bit organization, 166 MHz max, 3.3V only, no ZBT feature - uses conventional burst architecture with turnaround penalty | Higher density but lower timing efficiency in mixed read/write workloads; requires additional bus arbitration logic | Select when total memory capacity > 9 Mbit is required and ZBT timing is not mandatory for system throughput |
| AS7C33128PFSIG | 128K × 36-bit, 133 MHz, 3.3V, no ZBT or burst counter; asynchronous OE and simpler control interface | Lower density and performance; suited for cost-sensitive control-plane buffers where deterministic burst is unnecessary | Choose for legacy designs migrating from older async SRAMs where board layout reuse is prioritized over peak bandwidth |
Compared with CY7C1362BV18 and AS7C33128PFSIG, the 71V65803S150BQ delivers superior mixed-workload throughput via ZBT architecture and integrated burst counter - critical for packet-forwarding pipelines where read/write alternation occurs at line rate.
Availability
71V65803S150BQ is available at Aetrix Electronics and suitable for network switch ASICs, telecom line cards, industrial Ethernet gateways, and high-speed test equipment requiring stable component supply and long-term industrial temperature support.
Supply support for 71V65803S150BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V65803S150BQ belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency memory subsystems in packet-switched networks and real-time embedded systems demanding zero bus turnaround.
FAQ
What is the memory organization of the 71V65803S150BQ?
The 71V65803S150BQ is configured as 256K × 36-bit (9.44 Mbit), providing 36-bit wide data access. This organization supports efficient burst transfers and depth expansion using its three chip enable pins (CE1, CE2, CE2). The device does not support 512K × 18-bit configuration - that variant is implemented in the pin-compatible 71V65603S150BQ.
Does the 71V65803S150BQ support true zero bus turnaround (ZBT)?
Yes, the 71V65803S150BQ implements genuine ZBT™ functionality licensed from Renesas. It eliminates dead cycles between consecutive read and write operations by internally synchronizing output enable and using pipelined registers - verified by functional timing diagrams and truth tables in the official datasheet. This enables continuous 150 MHz bus utilization without turnaround penalties.
What package type is used for the 71V65803S150BQ?
The 71V65803S150BQ is supplied exclusively in the JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) package (PKG100), measuring 14 mm × 20 mm with 0.5 mm pitch. It is not offered in BGA or fBGA variants - those are designated under different suffixes (e.g., 71V65803S150BG for BGA).
How does burst addressing work on the 71V65803S150BQ?
Burst addressing on the 71V65803S150BQ is controlled by the ADV/LD and LBO pins. When ADV/LD = HIGH, the internal 4-word burst counter increments; when ADV/LD = LOW, a new external address loads. LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) sequence order - both defined in the datasheet's burst sequence tables and validated in timing diagrams.
Can the 71V65803S150BQ operate in industrial temperature range?
Yes, the 71V65803S150BQ is qualified for industrial temperature operation from –40°C to +85°C, as confirmed in the "Recommended Operating Temperature and Supply Voltage" table. This rating applies specifically to the 'S' speed grade (150 MHz) and is explicitly stated in the datasheet's grading section and absolute maximum ratings.
71V65803S150BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 512K x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V65803S150BQ FAQ
1.How can I place an order for 71V65803S150BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65803S150BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65803S150BQ reliable?
The price and inventory of 71V65803S150BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65803S150BQ is usually 5 days.
3.What payment methods are accepted for 71V65803S150BQ?
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4.How is shipping managed for 71V65803S150BQ?
71V65803S150BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65803S150BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65803S150BQ?
For technical support, including 71V65803S150BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65803S150BQ requirements.
6.How does Aetrix verify that 71V65803S150BQ is sourced from the original manufacturer or authorized distributors?
All 71V65803S150BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65803S150BQ meets industry standards.
7.What is the process for return or replacement of 71V65803S150BQ?
All 71V65803S150BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V65803S150BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65803S150BQ part is unused and in its original packaging.
Return procedure for 71V65803S150BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65803S150BQ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
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